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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1309-1312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was 〈m1;38p〉found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4585-4585 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In various paramagnetic and nearly ferromagnetic substances, the phenomenon of the susceptibility maximum at low temperatures is usually accompanied by the Curie–Weiss susceptibility at higher temperatures; the concurrence of these two features is universally observed in 4d and 5d metals, Laves-phase compounds, and heavy-fermion compounds. No existing theories, however, have been able to explain this concurrence. According to the Fermi-liquid model,1,2 we can express the susceptibility, as a matrix form, exactly in terms of the spin-antisymmetric part of the quasiparticle interaction function gij=gεε' (ε is the quasiparticle energy), χ(T)∝β Ji Jj (j↓(1/1+2βψ)↓i)[ni (1−ni)]1/2[nj(1−nj)]1/2, (1) where ψij=[ni(1−ni)]1/2 gij[nj(1−nj)]1/2, ni is the Fermi distribution function at state i, and β=1/kT. If gij is given, Eq. (1) can be evaluated numerically. We use the g function, which contains logarithmic terms such as (ε−μ)2 ln||ε−μ|| arising from the Fermi-liquid effect (μ is the chemical potential). We find that the calculated result for χ(T) gives a broad maximum at low temperatures because of the logarithmic terms and, at higher temperatures, it follows precisely the Curie–Weiss law, which directly reflects the general form of (1). In conclusion, both the susceptibility maximum and the Curie–Weiss behavior are found to be inherent in any Fermi liquid.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2951-2957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities Jc were measured in as-deposited, c-axis-oriented Bi2Sr2Ca2Cu3Ox thin films with Tc values as high as 97 K, which were prepared by metalorganic chemical-vapor deposition. These films showed high Jc ((approximately-greater-than)109 A/m2) at 77.3 K in high magnetic fields (≥1 T, H(parallel)a-b plane). The best values are 3.3×109 A/m2 at 1 T and 9.1×108 A/m2 at 8 T, which are the highest Jc for Bi-oxide thin films among those reported so far. There were no signs of weak links in the Jc(H) behavior, and the surface morphology examined by scanning electron microscopy showed no apparent grain boundaries. The values of Jc decreased sharply when the applied field deviated from the a-b plane, and went to zero at the angles where the field component in the c direction is nearly equal to the irreversibility field Hc2* parallel to the c axis. The angular dependence of Jc of these films is most reasonably explained by the theory of intrinsic pinning.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2106-2108 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier field-effect transistors have been fabricated from 3C-SiC and transistor operation has been studied at temperatures up to 400 °C. B-doped high-resistivity and undoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and source and drain contacts for n-type 3C-SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 599-603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of unintentionally doped n-type and Al-doped p-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures between 10 and 1000 K. Activation energies of Al acceptors and residual donors obtained from the temperature dependence of carrier density are 160 and 18 meV, respectively. 40%–60% of Al acceptors in the p-type epilayers are compensated, and hole mobility is limited by acoustic phonon scattering above 300 K and by ionized impurity scattering below 250 K.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2989-2991 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 254-257 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal stress in 3C-silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition was studied using Raman scattering. The stress in the epilayers grown on Si(001) at 1350 °C was found to be 5.4×109 dyn/cm2 tensile, which is comparable to that of silicon on sapphire. The magnitude of the stress is discussed in terms of the elastic deformation theory. It was found that there is not so much difference between the stress in 3C-SiC epilayers grown on Si(001) and that in 3C-SiC on Si(111) as the elastic deformation theory suggests.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1134-1136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of 3C- and 6H-silicon carbide (SiC) was investigated using Raman scattering. It was found that 3C-SiC(111) can be epitaxially grown on 6H-SiC(0001) by chemical vapor deposition, and that Raman spectra are useful for identification of heterostructure of thin layers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 303-305 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of SiC polytypes, 3C- and 6H-SiC, has been studied by chemical vapor deposition. Raman spectra were used to identify the polytypes. 3C-SiC and 6H-SiC were grown on 6H-SiC at low (1330–1500 °C) and high temperatures (1700–1800 °C), respectively. On the other hand, on 3C-SiC, only 3C-SiC was grown at all the temperatures. 3C-SiC epilayers grown at high temperatures have smooth surfaces and good electrical properties compared with those grown at low temperatures.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1058-1060 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers were grown on GaAs substrates by gas-source molecular-beam-epitaxy technique using dimethylhydrazine as a nitrogen source. It was found that cubic GaN grows on GaAs (001) surfaces epitaxially, while hexagonal GaN grows on GaAs (111) surfaces, from the analyses of x-ray diffraction and reflection high-energy electron diffraction patterns. Cathodoluminescence measurements suggested that the band-gap energy of cubic GaN is around 0.37 eV larger than that of hexagonal GaN.
    Type of Medium: Electronic Resource
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