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  • 1
    Electronic Resource
    Electronic Resource
    Schottky barrier height of MnSb(0001)/GaAs(111)B contacts: Influence of interface structure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2043-2047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height (SBH) of MnSb(0001)/n-GaAs(111)B diodes was investigated in terms of current–voltage characteristics for three different GaAs surfaces, GaAs (19×19), GaAs (2×2), and sulfur passivated GaAs. We observed that the SBH and the ideality factor changed significantly depending on the GaAs surface structure prepared before the MnSb growth. The sulfur passivated sample was superior to the others in that it has a lower ideality factor and higher barrier. The SBH fell off linearly with increasing ideality factor n. The SBH of MnSb(0001)/n-GaAs(111)B was estimated to be 0.94 eV by extrapolating the linear relationship to n=1. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305835
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  • 2
    Electronic Resource
    Electronic Resource
    Nondissipative kinetic simulation and analytical solution of three-mode equations of the ion temperature gradient instability (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 984-990 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondissipative drift kinetic simulation scheme, which rigorously satisfies the time-reversibility, is applied to the three-mode coupling problem of the ion temperature gradient (ITG) instability. It is found from the simulation that the three-mode ITG system repeats growth and decay with a period which shows a logarithmic divergence for infinitesimal initial perturbations. Accordingly, time average of the mode amplitude vanishes, as the initial amplitude approaches zero. An exact solution is analytically given for a class of initial conditions. An excellent agreement is confirmed between the analytical solution and numerical results. The results obtained here provide a useful reference for basic benchmarking of theories and simulations of the ITG modes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873897
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  • 3
    Electronic Resource
    Electronic Resource
    Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1515-1519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded α-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., [11¯0]SiC//[0001]Si3N4 and nearly (111)SiC//(101¯0)Si3N4 with low-angle discrepancy of either 3° or 5°. The origin of the low-angle discrepancies was explained in terms of a reciprocal lattice theory for heteroepitaxial interfaces. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428106
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  • 4
    Electronic Resource
    Electronic Resource
    Spin-flip rate of excitonic magnetic polarons in Cd1−xMnxTe/Cd1−yMgyTe quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6457-6459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lifetime of excitons in Cd1−xMnxTe/Cd1−yMgyTe single quantum wells was investigated by time-resolved photoluminescence spectroscopy. Spin-flips between dark and bright excitons remarkably change the excitonic lifetime yielding a two-exponential decay in the photoluminescence intensity. The temperature dependence of the two decay times shows that the spin-flip rate depends strongly on the formation of excitonic magnetic polarons. By forming polarons, the spin-flip rate from dark excitons to bright excitons is reduced effectively by the spin- barriers of the polarized Mn ions, which extends significantly the luminescence decay time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372737
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  • 5
    Electronic Resource
    Electronic Resource
    Modification of exchange interaction parameters by wire width in Cd0.95Mn0.05Te/Cd0.90Mg0.10Te quantum wires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6701-6703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-photoluminescence from mesa-shaped Cd0.95Mn0.05Te/Cd0.90Mg0.10Te quantum wires were studied. The Zeeman shift of the excitonic photoluminescence from the quantum wires in a magnetic field is significantly decreased, compared to that from quantum wells. This decrease results from the possible reduction of the exchange interaction of electrons and holes with Mn ions in low dimensional structures. In the excitonic photoluminescence of the quantum wires with the width of 50–100 nm, the transient relaxation of the luminescence peak energy due to the excitonic magnetic polaron formation is remarkably less than that in the quantum well. This result shows the suppressed excitonic magnetic polaron effect in the narrower quantum wires. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357143
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  • 6
    Electronic Resource
    Electronic Resource
    High-current microwave ion source for wide-energy-range O+ ion implantation : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 952-954 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-current microwave ion source which is used for O+ ion implantation in separation by implanted oxygen (SIMOX) wafer fabrication is presented. The source consists of a new transform waveguide which efficiently propagates a 2.45 GHz microwave power into the ion source, a cylindrical plasma chamber of 90 mm in diameter, and a multiaperture extraction electrode system. The extracted beams are mass separated and then postaccelerated up to 200 keV. Ion source operates stably for a long time and the microwave absorption efficiency is as high as 80%. A total extraction current of 240 mA is obtained at the extraction voltage of 50–60 kV and the mass-separated O+ current reaches about 100 mA at the same extraction voltage. The data show that the ion source has a good potential to provide 100 mA-class O+ ion beams stably in the wide energy range demanded for SIMOX ion implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150355
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  • 7
    Electronic Resource
    Electronic Resource
    Digital syringomatous carcinoma mimicking basal cell carcinoma (2001)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 144 (2001), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2001.04057.x
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  • 8
    Electronic Resource
    Electronic Resource
    ZnO nanobelts grown on Si substrate (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 144-146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared irradiation to heat an industrial brass (Cu–Zn alloy) disk in moderate vacuum, ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal hexagonal structure and grew along the [0001] direction. The nanobelts had two distinct widths along their entire length. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at 379 nm. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492008
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  • 9
    Electronic Resource
    Electronic Resource
    Millisecond electron–phonon relaxation in ultrathin disordered metal films at millikelvin temperatures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured directly the thermal conductance between electrons and phonons in ultrathin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron–phonon coupling in these films is significantly suppressed by disorder. The electron cooling time τε follows the T−4 dependence with a record-long value τε=25 ms at T=0.04 K. The hot-electron detectors of far-infrared radiation, fabricated from such films, are expected to have a very high sensitivity. The noise-equivalent power of a detector with the area 1 μm2 and the noise limited by fluctuations of the temperature are expected to be (2–3)×10−20 W/Hz, which is two orders of magnitude smaller than that of the state-of-the-art bolometers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407302
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  • 10
    Electronic Resource
    Electronic Resource
    Empty-space-in-silicon technique for fabricating a silicon-on-nothing structure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3290-3292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A promising technique to form the silicon-on-nothing structure is presented as an alternative to the silicon-on-insulator structure. A large plate-shaped empty space in silicon (ESS) below the surface of the silicon substrate can be fabricated by connecting the spherical empty spaces, which are formed by surface migration of Si on the patterned Si substrate. The ESS technique has the potential to change the microprocess for the fabrication of large-scale integrated circuits and it can be applied to various manufacturing technologies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324987
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