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  • 1
    Electronic Resource
    Electronic Resource
    Ion sources for large area processing (invited) : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1023-1028 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Large area ion sources have been used in ion doping systems in the field of LCD production. In these ion sources good uniformity and wide dynamic range in beam current are both required to achieve the good dose uniformity in wide dose range. A new ion source which uses dc arc discharge with three filaments, each of which is controlled individually, is now in the production lines instead of the conventional rf discharge type. Better than 5% of beam uniformity across 600 mm is achieved by an automated feedback control using beam profile data taken by a built-in beam profiler in less than 10 s from arc ignition. Another emerging requirement is high beam purity, for the ion beams from these ion sources are used without mass analysis. The hydrogen ion fraction was successfully reduced by magnetically retarding the hydrogen ions to less than 5%. A large area ion source having a newly designed mass separating structure is developed. The structure is comprised of a permanent magnet array and a beamlet scanner just after the multiple-slot beam extraction electrode system. All the unwanted ion species in the beam can be eliminated to a good level. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150377
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  • 2
    Electronic Resource
    Electronic Resource
    Expression of mRNA for androgen receptor, 5α-reductase and 17β-hydroxysteroid dehydrogenase in human dermal papilla cells (1999)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 141 (1999), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In order to determine whether adrenal and gonadal weak androgens are utilized to form active androgens in human hair, we studied the expression of mRNA for androgen receptor (AR), 5α-reductase and 17β-hydroxysteroid dehydrogenase (17β-HSD) in cultured dermal papilla cells (DPCs) from various body sites. AR mRNA was expressed in beard (Be) and axillary hair (Ax) DPCs from both sexes, but only at a low level in DPCs from occipital scalp hair (OS). Type I 5α-reductase mRNA was expressed by all DPCs. Type II 5α-reductase mRNA was identified in beard DPCs, but was absent from OS and Ax DPCs. Type II 17β-HSD mRNA was strongly expressed in outer root sheath cells (ORSCs), while DPCs except for male Ax expressed no type II 17β-HSD mRNA. In contrast, type III 17β-HSD mRNA was strongly expressed in Be DPCs and Ax DPCs from both sexes; ORSCs showed a low level of expression. Expression of type III 17β-HSD mRNA was not regulated by androgen in DPCs. These results suggest that the sensitivity of hairs to androgen is partially controlled by the site-specific expression of AR, 5α-reductase and 17β-HSD in DPCs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1999.03156.x
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1311-1314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the InAlAs/InGaAs modulation-doped structure, passivated with a SiN film, was investigated. In contrast to the capless sample, the passivated modulation-doped sample exhibited negligible degradation in the two-dimensional electron gas concentration (NS) after annealing at 280 °C, indicating that SiN is an efficient passivation material to ensure good thermal stability for the InAlAs/InGaAs modulation-doped structure. In addition, partial recovery in NS was found by annealing the SiN-passivated sample that had experienced serious NS degradation. A series of secondary ion mass spectroscopy (SIMS) measurements and Hall effect measurements revealed that the recovery of NS is associated with the discharge of fluorine atoms from the Si-doped n-type InAlAs layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363911
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of internal stress in sputter-deposited films by energetic ion bombardment (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3743-3745 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considerable relaxation of the high internal stresses which arise in HfN thin films during their deposition by a sputtering method has been accomplished through bombarding the films with energetic silicon ions. The internal stresses have been estimated from the measurements of the surface curvature. Our results indicate a relaxation of the internal compressive stresses in the films, which occurs via a transport of the interstitial defects within the thermal spikes created by a post-deposition energetic ion bombardment. The mechanical properties of HfN films before and after the treatment have been studied by depth-sensing indentation technique while the structural analysis has been made using x-ray diffraction, Rutherford backscattering, and Auger electron spectroscopy. Ion bombardment did not affect resistivity of the thin films while improving their plastic properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115992
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  • 5
    Electronic Resource
    Electronic Resource
    Local current distribution in a ferromagnetic tunnel junction measured using conducting atomic force microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5206-5208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local electrical properties were measured simultaneously with the topography for a Ta(50 Å)/Fe20Ni80(50 Å)/IrMn(150 Å)/Co(50 Å)/Al(13 Å)-oxide junction. The electrical image showed the contrast with around a few nm lateral size and a strong correlation with the topographical image was not observed. In the local current–voltage characteristics, data within the bias voltage of ±1.5 V were fitted well to Simmon's equation and we obtained the barrier height Φ=1.9 eV and the thickness d=12 Å. On the other hand, data with the bias voltages higher than 3 V were fitted well to Fowler–Nordheim equation. The histogram of current density was calculated by taking into consideration a Gaussian distribution of the barrier thickness and the height. The distribution of the barrier height can explain the experimental result realistically. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373296
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  • 6
    Electronic Resource
    Electronic Resource
    Magnon-assisted inelastic excitation spectra of a ferromagnetic tunnel junction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5209-5211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inelastic-electron-tunneling spectroscopy (IETS) has been applied to investigate the spin dependent tunneling process for a Ta(50 Å)/Fe20Ni80(60 Å)/IrMn(300 Å)/Co(60 Å)/Al(13 Å)-oxide/ Co(40 Å)/Fe20Ni80(200 Å) spin-valve-type tunnel junction. IET spectra for both parallel and antiparallel magnetization configurations of ferromagnetic electrodes showed a strong peak at 12 mV. The subtraction spectrum defined by the difference between the spectra of both the configurations was calculated. Spin-independent inelastic excitation processes are not affected by an external magnetic field, and thus, the subtraction spectrum indicates the inelastic modes induced only by the magnetic origin. It showed a strong peak at 12 and 20 mV for the positively and negatively biased direction of the bottom electrode, respectively. The tendency of the tunneling magnetoresistance ratio to decrease with bias voltage agreed with the shape of the subtraction spectrum. By assuming the surface magnon excitation, we obtained the distributions of the correlation length and the Curie temperature for both ferromagnetic electrode surfaces faced on the insulator. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373297
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  • 7
    Electronic Resource
    Electronic Resource
    EFFECTS OF NOISE ON HUMAN PLACENTAL LACTOGEN (HPL) LEVELS IN MATERNAL PLASMA (1977)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 84 (1977), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The levels of human placental lactogen (HPL) in the serum of expectant mothers both subjected to and not subjected to aircraft noise were measured. The HPL levels in the quiet reference area and in the noise area were similar before the 29th week of pregnancy. However, the HPL levels of subjects in the noise area tended to be lower than those in the reference area after the 30th week of pregnancy and the difference became significant after the 36th week of pregnancy. The lower HPL levels were associated with lower birth weight for infants of mothers who lived in the noise area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1977.tb12536.x
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  • 8
    Electronic Resource
    Electronic Resource
    Hormonal Signaling and Regulation of Salt and Water Transport in the Collecting Duct (1994)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 56 (1994), S. 711-739 
    Details
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ph.56.030194.003431
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  • 9
    Electronic Resource
    Electronic Resource
    Spin glass in Fe-Ni Invar alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3456-3458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial ac susceptibility χ was examined in the temperature range from 4.2 K to Curie temperatures for polycrystalline Fe100−xNix (20≤x≤50) alloys. The reentrant spin glass is found in x=30–45 alloys. The dependence of the freezing temperature Tg on the intensity of driving magnetic field (ac: 0–0.26 Oe; dc: 0–10 Oe) and on the frequency (140–9200 Hz) was studied for the Fe65Ni35 alloy. A strong magnetic relaxation is observed below Tg. These results are discussed based on the cluster model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335075
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced interstitial expression of caldesmon and its suppression by glucocorticoid and heparin therapy in IgA nephropathy patients (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Nephrology 4 (1998), S. 0 
    Details
    ISSN: 1440-1797
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1797.1998.tb00443.x
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