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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5263-5263 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A Green-function method is employed within a matrix formalism to study the spin-wave excitations in some ferromagnetic low-dimensional structures described by the Heisenberg model. Recent advances in materials growth, together with appropriate etching and/or high-resolution electron-beam lithography, have made possible the fabrication of such structures with dimensions on the nanometer scale,1 and it is of interest to study their spin dynamics. The theory is based on a generalization of earlier work on magnetic films and layered systems.2 Applications are made first to ferromagnetic films that are terminated by one or two truncations perpendicular to the film surfaces. The latter geometry allows discussion of ferromagnetic rods as a particular case. Analytic expressions are obtained for the dispersion relations and spectral intensities of the localized surface (and edge) spin waves and quantized bulk spin waves in these finite structures. The results are illustrated by numerical examples. Further applications are made to interfaces between two films with perpendicular truncations. In general, the two films may be of different materials and have different thicknesses, but two special cases of interest are (i) the interface between two different films of equal thickness and (ii) the step between two films of the same material and different thickness. The dispersion relations and spectral intensities of spin waves localized near the interface or step are derived analytically and the results are illustrated numerically.© 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5495-5497 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A Green function matrix method has been developed to investigate the spin dynamics in low-dimensional Heisenberg ferromagnetic nanostructures. The theory is based on a generalization of earlier work on the spin wave spectra of magnetic films and their interfaces, and in the present case applications are made to the surface step produced at a perpendicular interface between two films of the same material but different thickness. Analytic expressions are obtained for the dispersion relation and spectral intensities of the localized surface and edge spin waves and the quantized bulk spin waves near a step. The effects of varying the step height and modifying the exchange interactions near the step are studied. These factors influence the number of localized modes, as well as their frequency, intensity, and attenuation. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5444-5446 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n+)-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 192-198 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Key properties of PbSrSe thin films grown by molecular beam epitaxy have been studied for mid-infrared optoelectronic device applications. Detailed knowledge of the material parameters for the device design is required. The material parameters considered are: temperature-dependent band gaps, composition (or band gap)-dependent effective masses, and energy-dependent refractive indices. The study has been carried out by a combination of temperature-dependent photoluminescence and absorption measurements with the theoretical models on PbSrSe thin films of Sr compositions of as high as 0.276. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSe/Pb0.934Sr0.066Se multiple quantum well mid-infrared laser systems, for studying the band offsets and subband behavior. We have shown that the derived material parameters clearly promise of being applied to other PbSrSe thin films and PbSe/PbSrSe heterostructure systems for their optoelectronic applications. © 2002 American Institute of Physics.
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2063-2065 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier–phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90–120 meV in the InN thin film. It is found that the carrier–phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers. © 2002 American Institute of Physics.
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3489-3491 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two types of spiral growth, single and double spirals, of C60 epitaxial films on a KBr(001) substrate were observed by atomic force microscopy (AFM). These single and double spirals were found on films grown at different rates. All spiral islands show the threefold symmetry of the face-centered-cubic (fcc) structure. In the case of single spirals, many fringes were observed in three equivalent [11¯0] directions on the fcc (111) surface. From the AFM images, we concluded that the growth process of these spirals can be explained by the classical crystal growth theory of Burton, Cabrera, and Frank and that screw dislocations form without any direct influence of the substrate. © 1997 American Institute of Physics.
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2579-2581 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electronic states in PbSe/Pb0.934Sr0.066Se multiple-quantum-well structures (MQWs) grown by molecular-beam epitaxy have been investigated both theoretically and experimentally for the midinfrared laser applications. With the aid of combined temperature-dependent photoluminescence and absorption measurements on a Pb0.934Sr0.066Se thin film for the effective masses and temperature-dependent band gaps, we find that the PbSe/PbSrSe MQWs have type-I band alignment and the conduction band offset ratio is Qc=0.82±0.03. The calculation, taking into account the strain, carrier confinements, and the multivalley band structure, can well explain both the observed luminescence peak energies and the temperature coefficient of the luminescence peaks as a function of well thickness. © 2001 American Institute of Physics.
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  • 8
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 495 (1987), S. 0 
    ISSN: 1749-6632
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Allgemeine Naturwissenschaft
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 8694-8697 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 12106-12110 
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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