Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 5444-5446
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n+)-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1405137
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