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  • 1
    Electronic Resource
    Electronic Resource
    Identification of naturally occurring quaternary compounds by combined laser desorption and tandem mass spectrometry (1983)
    s.l. : American Chemical Society
    Analytical chemistry 55 (1983), S. 1302-1305 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00259a023
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  • 2
    Electronic Resource
    Electronic Resource
    Spectrum of matrix-isolated carbon disulfide (1971)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 75 (1971), S. 2204-2208 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100683a023
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  • 3
    Electronic Resource
    Electronic Resource
    EL2 and anion antisite defects in plastically deformed GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3381-3385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346341
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor (78/203 meV) in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1454-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of liquid encapsulated Czochralski grown, Ga-rich (melt composed of 55% Ga and 45% As), p-type GaAs were studied by the Hall effect, capacitance-voltage measurements, magnetic circular dichroism, optically detected electron spin resonance, deep level transient spectroscopy (DLTS), and Raman spectroscopy. Two levels with ionization energies of 78 and 203 meV above the valence band edge were examined and fitted to the singly and doubly charged ground states of a double acceptor which is designated an EK2 center. The Raman scattering cross sections for electronic excitations were determined from the defect concentrations measured by DLTS. The EK2 center is electrically passivated via a remote microwave hydrogen plasma technique. It can be reactivated by heat treatments with an activation energy of Ea=1.4 eV. The concentrations of the two levels were equal to each other in four as-grown samples, in samples following passivation, and at all stages during the subsequent reactivation. The observations are inconsistent with previous suggestions that the levels are due to two separate defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347287
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  • 5
    Electronic Resource
    Electronic Resource
    Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7533-7542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave detection of the Shubnikov–de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished from the usual transport scattering time. The measured values of the carrier concentration and single-particle relaxation time agree with electrical measurements, while the problem of making contacts on the structure is avoided. Uncertainties in the analysis for the single-particle relaxation time are discussed. Cyclotron resonance, optically detected cyclotron resonance, and magneto-photoluminescence are applied as other contact-free techniques on the same samples. The results and suitability of these techniques are compared with the microwave detection of the SdH effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354001
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  • 6
    Electronic Resource
    Electronic Resource
    Excitonic line broadening in bulk grown Cd1−xZnxTe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4523-4526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xZnxTe crystals grown by the traveling heater method have been investigated by low-temperature photoluminescence. The excitonic energy gap as a function of the alloy composition was determined over the complete range of x=0 to x=1. The composition dependent broadening of the neutral acceptor bound exciton (A 0X) line was determined. Theoretical calculations, where the A 0X exciton is treated within the pseudodonor model and the conduction/valence band offset between CdTe and ZnTe is taken into account, give close agreement with the experiment for x≤0.77. Evidence for clustering of Zn atoms is found for x≥0.77.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350798
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  • 7
    Electronic Resource
    Electronic Resource
    A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1811-1817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305549
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  • 8
    Electronic Resource
    Electronic Resource
    Stimulated Raman backscattering with and without optical fiber smoothing technique in 0.53 μm laser-created plasmas (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 2075-2083 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Backward stimulated Raman scattering (SRS) experiments have been performed using the optical fiber smoothing implemented on the high-power Phébus laser facility [Laser Part. Beams 4, 93 (1988)]. The interaction took place in low-Z plasmas presenting either exponential density profiles (solid targets) or Gaussian-type profiles. Raman instability was driven with 1.4 ns duration—0.53 μm laser pulses, containing an energy up to 1.8 kJ. Comparative and absolute measurements of SRS reflectivity are reported as a function of the incident laser intensity, both with and without beam smoothing. Near-backward time-resolved SRS spectra are also presented. Random phase plates are not used in these experiments. With or without smoothing, SRS reflectivities of the order of 10% have been measured. However, smoothing becomes effective in exponential profiles below 1015 W/cm2. Although the optical fiber efficiently reduces the contrast of the energy modulations in the focal spot, the spectral bandwidth may be insufficient to quench SRS development in these conditions. This last assumption is in agreement with theoretical predictions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871294
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  • 9
    Electronic Resource
    Electronic Resource
    On the time scale and time course of protein conformational changes (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 7253-7259 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Proteins change their global conformation very slowly compared to the time scales of most localized internal motion. The relationship between these slow and fast processes was investigated with the aid of a stochastic model recently applied to a related problem of protein folding [Zwanzig et al., Proc. Natl. Acad. Sci. 89, 20 (1992)]. In the present study a change in conformation was treated as a bond rotational isomerization that may only occur when several other gating bonds simultaneously assume permissive orientations. The requirement of correct orientation of these gating bonds is analogous to the alignment of the tumblers in a lock. For a range of reasonable choices of parameters, this model generated realistic time scales for protein conformational changes. Although the transition time depended on the value of an energy bias against the permissive position of a gating bond, the model could still generate reasonable transition times in the absence of an energy bias. For a wide range of parameters chosen to give typical experimental rates for biological transitions, the model predicted conformational changes with simple exponential kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465418
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  • 10
    Electronic Resource
    Electronic Resource
    Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5196-5198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Ga and V2−Ga centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga-V2−Ga associated complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335256
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