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  • 1
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 27-32 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation has been conducted to determine the feasibility of generating conditions favorable to population inversion, gain, and x-ray lasing in a two-component plasma consisting of sodium and neon. An intense laser beam is assumed incident on both sides of a Na/Ne slab target separated by a carbon thermal buffer. Temperature and density profiles of the laser target interaction are calculated using a Lagrangian hydrodynamics model. Level populations and radiative emissions are evaluated using a collisional-radiative equilibrium model including opacity effects. It appears possible to achieve measurable gain at 82, 58 and 230 A(ring) from the 3-2, 4-2, and 4-3 transitions of heliumlike neon, respectively. Additionally, by pulse tailoring and target design, it should be possible to enhance the Na pumping power. off
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 96 (1989), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Twelve women undergoing laser ablation of the uterus for menorrhagia were studied by haemodynamic, biochemical and haematological indices including radioisotope dilution studies of plasma volume to assess the degree of fluid absorption into the circulation during laser surgery. There was a significant rise in central venous pressure and serum chloride and a significant decrease in plasma protein, albumin and haematocrit. Absorption of the irrigating fluid used was demonstrated and in one woman whose case history is illustrated this was excessive.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 37 (1989), S. 0 
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: Ground-penetrating radar is a technique which offers a new way of viewing shallow soil and rock conditions. The need to better understanding overburden conditions for activities such as geochemical sampling, geotechnical investigations, and placer exploration, as well as the factors controlling groundwater flow, has generated an increasing demand for techniques which can image the subsurface with higher resolution than previously possible.The areas of application for ground-penetrating radar are diverse. The method has been used successfully to map ice thickness, water depth in lakes, bedrock depth, soil stratigraphy, and water table depth. It is also used to delineate rock fabric, detect voids and identify karst features. The effective application of the radar for the high-resolution definition of soil stratigraphy and fractures in bedrock is highlighted.The basic principles and practices involved in acquiring high quality radar data in the field are illustrated by selected case histories. One example demonstrates how radar has been used to map the bedrock and delineate soil horizons to a depth of more than 20 m. Two case histories show how radar has been used to map fractures and changes of rock type to 40 m range from inside a mine. Another case history demonstrates how radar has also been used to detect and map the extent of groundwater contamination. The corroboration of the radar results by borehole investigations demonstrates the power and utility of the high-resolution radar method as an aid for interpolation and extrapolation of the information obtained with conventional coring programmes. With the advent of new instrumentation and field procedures, the routine application of the radar method is becoming economically viable and the method will see expanded use in the future.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 24 (1985), S. 5396-5406 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1419-1421 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of forming dielectrically isolated silicon-on-insulator device islands by using a thin patterned masking layer during implantation of high doses of oxygen into silicon is described. Due to energy loss in the masking layer, the oxygen ions synthesize both a surface oxide in the masked field regions and, simultaneously, a buried oxide in the unmasked windows. The field oxide is contiguous with the buried oxide under the device islands. This method of achieving total dielectric isolation has potential application in the fabrication of high-density silicon-on-insulator circuits with a very flat topography.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 465-467 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2242-2244 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that well-defined buried layers of β-SiC can be grown epitaxially within a silicon substrate. This structure is formed by implanting high doses of carbon ions (〉3×1017 C+ cm−2) at 200 keV into a (100) single-crystal silicon which is maintained at a temperature of approximately 550 °C. During the subsequent anneal at 1405 °C for 90 min redistribution of the implanted species occurs, enabling the formation of a buried layer of β-SiC overlain by high-quality single-crystal silicon (χmin=4.1%).
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This review summarizes recent experimental data on imploding z-pinches and their radiation output, and gives an overview of theoretical issues concerning radiation production in the pinch plasma. A z-pinch plasma is created when the current from a fast, powerful electrical generator compresses and heats a small amount of material between the electrodes. The hot, dense plasma emits copious amounts of radiation extending from the visible to the x-ray region. With a 10-TW electrical discharge the radiative power may be a few TW, with an energy per pulse of up to tens of kilojoules. Our interest is mainly in the photons with energy around 1 keV, which are useful in x-ray lithography, microscopy, surface studies, and other applications.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonhomogeneous distribution of the carrier transport properties in silicon on insulator thin films synthesized by oxygen implantation are determined using gate-controlled p-type Hall devices. The conductivity, Hall effect, and capacitance were measured between 77 and 300 K as a function of the gate voltage and then differentiated to obtain depth profiles. The hole mobility is high and nearly constant in the top 100 nm of the film but drops rapidly in the region containing implantation-induced defects. The very good quality of the top layer, similar to that of bulk Si, is confirmed by the temperature behavior of both the mobility and the ionized impurity concentration at various depths in the film. Acoustic phonon scattering is found to prevail above 120 K and Coulombian scattering below. A difference between the profile of the total number of holes and that of the mobile holes is observed at low temperatures and explained in terms of long-range potential fluctuations.
    Type of Medium: Electronic Resource
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