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  • 1
    Electronic Resource
    Electronic Resource
    Generation of relativistic photoelectrons induced by an ultraviolet laser and their propagation characteristics in a longitudinal guiding magnetic field (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2507-2512 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoelectrons from a metal surface irradiated by a pulsed ultraviolet laser were accelerated to relativistic energy to obtain a very cold and relatively high-current electron beam. Typical values of the transverse velocity component β⊥/β(parallel) were measured to be less than 8×10−3, which leads to a spread of the parallel energy component Δγ(parallel) /γ(parallel) of 1×10−4 or less. Propagation characteristics in a longitudinal guiding magnetic field were investigated. A nonadiabatic factor was defined to estimate the conservation of the magnetic moment of the electrons moving along the magnetic flux, and this was shown experimentally to be reasonable. Spacial controllability of the cross section of this electron beam was demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351066
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  • 2
    Electronic Resource
    Electronic Resource
    Competition between two resonance frequency branches in a waveguide free-electron laser (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 426-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the problems encountered in designing a waveguide free-electron laser (FEL) is to suppress the lower-frequency branch, which may have a higher gain than the more useful higher-frequency branch. It is shown that the electron pulse length and energy spread strongly influence the competition between the gains at high and low frequency for a waveguide FEL. It is also found that the negative slippage that may take place at the lower-frequency branch results in larger reduction in gain than the positive slippage. The maximum allowable electron energy spread for both resonance frequencies is derived. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359347
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrafast 1.55 μm all-optical switching using low-temperature-grown multiple quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 153-155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature grown surface-reflection all-optical switching has been demonstrated with ultrafast photoresponse (1.5 ps), low switching energy (2 pJ), high-contrast (13 dB), polarization independence, and wide operation wavelength range in the 1.55 μm band using low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells. The combination of low-temperature growth and Be-doping contributes to the ultrafast photoresponse. Additionally, the introduction of compressive strain and a mirror with 1% reflectivity greatly enhances optical nonlinearities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116131
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  • 4
    Electronic Resource
    Electronic Resource
    InGaAs/InAlAs bistable multiple quantum well lasers with large on/off ratio using the resonant tunneling effect (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1462-1464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bistable operation with a large on/off ratio of 800:1 is achieved in InGaAs/InAlAs multiple quantum well (MQW) lasers using the resonant tunneling effect at 77 K. Structural dependence of resonant tunneling characteristic in the MQW structures reveals that the threshold current density, at which negative differential resistance appears, increases drastically when the InAlAs barrier width of MQW structures decreases. The increase in the threshold current density has led to an improvement in the bistable characteristics of InGaAs/InAlAs MQW lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99967
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic optical bistability in an InGaAs/InAlAs multiple quantum well étalon at 1.5 μm wavelength (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2062-2064 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical bistabilities due to electronic refractive index changes are observed in an InGaAs/InAlAs multiple quantum well étalon device at around 1.5 μm wavelength. The switching speeds of less than 30 ns and the induced refractive index changes of −0.1% are observed using a tunable F-center laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102973
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  • 6
    Electronic Resource
    Electronic Resource
    Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2795-2797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric field effects in excitonic absorption characteristics are studied for high-quality InGaAs/InAlAs multiple-quantum-well structures grown by molecular beam epitaxy. The minute comparison between the experimental and theoretical results verifies the following: first, the variations of exciton levels in the first subband show excellent agreement with the calculations; second, the exciton level in the second subband shows a shift to the higher energy (blue shift).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341582
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1955-1960 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electron-trapping centers present in InAlAs (barrier layers) are found to have significant effects on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures grown by molecular-beam epitaxy. When the energy depths of these centers are less than the discontinuity of the conduction band for this heterojunction, they come to be ionized to produce two-dimensional electron gas in the quantum well (InGaAs). The excess electrons thus accumulated dissociate the excitons by screening the attractive potential between electrons and holes. Hence, the deep levels in barrier layers must be reduced in order to improve the optoelectronic quality of this class of multiquantum-well structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341093
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  • 8
    Electronic Resource
    Electronic Resource
    Compact electron-accelerator system using laser-induced photoelectrons and DISKTRON electrostatic accelerator (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1010-1014 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of relativistic electron acceleration facility is being developed by the Laser Science Research Group at The Institute of Physical and Chemical Research. It utilizes laser-induced photoelectrons accelerated by a compact DISKTRON electrostatic accelerator, which makes it possible to generate a controllable bright short-pulsed electron beam up to the energy of 1 MeV with a low emittance (〈2×10−5 mrad) and high current density (∼500 A/cm2) without any guiding field. The characteristics of the entire facility and some of the key components are described in detail. The experimental results which confirm the possibilities of increasing quantum efficiency of metal photocathodes by geometric alteration are reported. Observation of laser undulator effects in the visible wavelength was demonstrated in the facility. The coming use of the system includes a far-infrared/submillimeter free-electron laser using a microwiggler and generation of extreme ultraviolet radiation by the laser undulator. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146037
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  • 9
    Electronic Resource
    Electronic Resource
    Ultrafast 1.55-μm photoresponses in low-temperature-grown InGaAs/InAlAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doping with Be was found to be very effective for shortening of carrier lifetime in InGaAs/InAlAs multiple quantum wells (MQWs) grown at low temperature by molecular beam epitaxy. The MQW materials have carrier lifetimes controllable from a few tens of picoseconds to 1 ps in the 1.55-μm wavelength region, coupled with a large optical nonlinearity due to an excitonic feature, implying applicability to ultrafast optical devices in the fiber-optic communication. The carrier lifetime was measured by a time-resolved pump-probe method using an optical source based on a 1.535-μm semiconductor laser. We also investigated the resistivity, carrier density, and Hall mobility in the MQWs. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112870
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3130-3132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of carrier escape time from InGaAs/In(Ga)AlAs multiple quantum wells (MQW) on barrier width and barrier height is studied by using pump-probe measurement. Absorption saturation due to phase space filling caused by photogenerated carriers, and following electric-field screening dominates the transient electroabsorption signals. The barrier thickness strongly affects the carrier escape time. Escape time from MQW of less than 5 ps occurs under high electric field, and the escape time from the optical confinement layer is about one order of magnitude larger.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111369
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