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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 76 (1972), S. 1026-1030 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5596-5600 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of amorphous BaTiO3 thin films deposited on Si substrates were studied as functions of annealing temperature. The film thickness decreased monotonically as the annealing temperature increased up to 600 °C. This reduction is believed to correlate with the densification process observed in the amorphous films during annealing. After the 500 °C annealing, a partial crystallization process was observed. It was also found that the dielectric constant and the index of refraction of the film showed significant changes as the annealing temperature increased from 400 to 500 °C. Correlations between the film density, index of refraction, and the dielectric constant are discussed. A severe reaction at the interface between the film and Si substrate was observed in the 750 °C annealed sample.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3214-3227 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We discuss the technique of resonance Raman saturation spectroscopy and present experimental results that probe relaxation processes in heme proteins following electronic excitation in the Soret band. The observable relaxation time scales are limited by the laser excitation rate kL rather than by the laser pulse width (∼10 ns). Analysis of the data using a theory that separates the electronic and vibrational relaxation leads to electronic ground state recovery times τ=6.4±2.0 ps for ferrocytochrome c, τ=4.8±1.5 ps for deoxymyoglobin, and τ=2.0±0.7 ps for deoxyhemoglobin. The Raman depolarization ratio is predicted to increase at high laser flux, due to the preparation of a partially oriented sample by photoselective excitation. Such effects are observed in heme systems and the relaxation times extracted from the depolarization analysis are in good agreement with those derived from measurements of Raman intensity saturation. Studies of the asymmetric broadening of the ν4 mode of cytochrome c at high laser flux reveal that the line shapes in the Stokes and anti-Stokes region are inequivalent.Time-reversal symmetry dictates that this broadening is due to an underlying Raman band associated with an excited electronic state that is populated at high laser flux. Similar line broadening effects, observed in hemoglobin and myoglobin samples, are also shown to arise from Raman scattering of excited electronic states rather than Rabi broadening [Alden et al., J. Phys. Chem. 94, 85 (1990)] or anharmonic coupling to vibrationally hot low frequency modes [Petrich et al., Biochemistry 26, 7914 (1987)]. Quantitative analysis of Stokes and anti-Stokes Raman scattering determines the heme vibrational temperature as a function of laser flux and leads to a description of the Raman intensities that differs significantly from that of Lingle et al. [J. Phys. Chem. 95, 9320 (1991)], which ignores electronic saturation effects and is based on the scattering properties of a two-level system. For cytochrome c, we use a simple thermal transport model to extract a value for the product of the heme area and the coefficient of surface heat transfer between the heme and the surrounding protein. This leads to a ∼4 ps time constant for the short-time exponential phase of heme cooling.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3912-3917 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the patterned heteroepitaxial processing (PHP) approach for the removal of threading dislocations (TDs) from ZnSe and ZnS0.02Se0.98 on GaAs (001). PHP involves the growth of a continuous heteroepitaxial layer followed by postgrowth patterning and annealing. We found that the basic mechanism of TD removal by PHP is thermally activated dislocation motion in the presence of sidewalls. By studying the temperature dependence we showed that the activation energy for the annealing process (∼0.7 eV in ZnSe on GaAs) is consistent with dislocation motion by glide. We showed that there is a minimum mesa thickness required for the complete removal of TDs by PHP (∼3000 Å for 70 μm×70 μm mesas of ZnSe on GaAs). This is because the lateral forces acting on TDs are proportional to the mesa thickness. We also conducted a preliminary study of the mismatch dependence of PHP. Our results suggest that PHP removes TDs more effectively in the higher lattice mismatch system ZnSe/GaAs (001) than in the lower lattice mismatch system ZnS0.02Se0.98/GaAs (001). This is expected based on the mismatch dependence of the line tension forces in the misfit segments of dislocations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2639-2641 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high charge storage density was achieved in BaTiO3 thin films on Si substrates prepared by a reactive partially ionized beam deposition technique and rapid thermal annealing (RTA) treatment. The films, being deposited at a low substrate temperature, were amorphous. The films were then annealed by using RTA in N2 ambient at 500 °C for 1 min. After the annealing the relative dielectric constant of the films was 20 and the thickness of the films was 310 A(ring). The charge storage density of the films was calculated to be as high as 5.6 μC/cm2 at 10 V. The leakage current density was on the order of 10−7 A/cm2 at an applied electric field of l MV/cm. The potential application of this film in high density memory is discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2443-2445 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means. The PIB contained 0.8–1.2% of Al self-ions and a bias potential of 2–5 kV was applied to the substrate during deposition. The enhancement of the electromigration resistance of the Al films is believed to be associated with the strong preferred orientation (in the [111] direction) that these films have. Surprisingly the preferred orientation effect is not accompanied by an enlargement of the Al grain size. This combination of preferred orientation and small grain size may find important applications in future very large scale integrated metallization.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 28 (1977), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract— The effects of brief exposures of a number of depolarizing agents on 24Na+ influx and on the Na+, K+ and ATP contents of synaptosomes were studied using a Millipore filtration technique to terminate the reaction. When synaptosomes were incubated in normal medium, there was a rapid influx of 24Na+ and a gain in Na’contents; neither the 24Na+ influx nor the Na+ gain were blocked by tetrodotoxin suggesting that this Na+ entry did not involve Na+-channels.Veratridine markedly increased the rate of 24Na+ influx into synaptosomes and also increased the Na+ content and decreased the K+ content of synaptosomes within the first 10s of exposure. The normal ion contents were reversed by 1 min. The effects of veratridine on Na+ influx and on synaptosomal ion contents were prevented by tetrodotoxin and required Na+ in the medium.The ionophores gramicidin D and valinomycin also rapidly reversed the Na+ and K+ contents of synaptosomes, but these effects could not be blocked by tetrodotoxin. The reducing effect of gramicidin D on synaptosomal K+ content required Na’in the medium, whereas valinomycin caused a fall in the K+ content of synaptosomes in a Na+-free medium.Veratridine and gramicidin D, at concentrations known to reverse the synaptosomal ion contents, did not affect synaptosomal ATP levels. In contrast, valinomycin and NaCN caused an abrupt fall in synaptosomal ATP levels.The above findings suggest that veratridine quickly alters synaptosomal Na+ and K+ contents by opening Na +-channels in the presynaptic membrane, and provide direct evidence for the existence of Na+-channels in synaptosomes. In contrast, gramicidin D and valinomycin appear to act independently of Na +-channels, possibly by their ionophoric effects and, in the case of valinomycin, by diminishing synaptosomal ATP contents and hence diminishing Na+-pump activity.The rapid reversals of Na+ and K+ contents by these drugs could affect the resting membrane potentials, Na+-Ca2+ exchange across the synaptosomal membrane, and the release, synthesis and uptake of neurotransmitters by synaptosomes.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1996-1998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3265-3267 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500 °C. Both Si and Ge are shown to be fully oxidized, forming SiO2 and GeO2. Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500 °C, the oxide is stoichiometric and it does not lose its GeO2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1064-1065 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well separated BaTiO3 microcrystallites were observed by transmission electron microscopy (TEM) in rapidly annealed, amorphous BaTiO3 thin films. The crystallization temperature for amorphous BaTiO3 is between 400 °C and 500 °C.
    Type of Medium: Electronic Resource
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