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  • 1
    Electronic Resource
    Electronic Resource
    Interaction potentials and diffusion coefficients between sodium and rare gases (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 3825-3826 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Diffusion coefficients of Na in He, Ne, and Ar are calculated from the molecular Chapman–Enskog theory. For the Na–Ne system, only Patil's potential [J. Chem. Phys. 94, 8089 (1991)] among all proposed potentials predicts a temperature dependence of the coefficients that is in agreement with the available measurements. Besides providing reliable diffusion coefficients, present results validate Patil's theoretical method which has some unique and far-reaching features. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473467
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal oxidation on electrical characteristics of chemical-vapor-deposited SiO2 gate dielectrics (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5641-5643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, effects of rapid thermal oxidation (RTO) on electrical characteristics of thin (200 A(ring)) chemical-vapor-deposited (CVD) SiO2 have been studied. Current density-electric field (J-E) characteristics, flat-band voltage, and gate voltage shifts under constant-current stressing were also examined. Results show that RTO improves the charge trapping property of as-deposited CVD oxides. In addition, RTO of CVD oxides also increases the electron injection barrier height of the as-deposited samples at the cathode and produces devices with lower leakage current and tighter breakdown distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343676
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  • 3
    Electronic Resource
    Electronic Resource
    Patterned heteroepitaxial processing applied to ZnSe and ZnS0.02Se0.98 on GaAs (001) (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3912-3917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the patterned heteroepitaxial processing (PHP) approach for the removal of threading dislocations (TDs) from ZnSe and ZnS0.02Se0.98 on GaAs (001). PHP involves the growth of a continuous heteroepitaxial layer followed by postgrowth patterning and annealing. We found that the basic mechanism of TD removal by PHP is thermally activated dislocation motion in the presence of sidewalls. By studying the temperature dependence we showed that the activation energy for the annealing process (∼0.7 eV in ZnSe on GaAs) is consistent with dislocation motion by glide. We showed that there is a minimum mesa thickness required for the complete removal of TDs by PHP (∼3000 Å for 70 μm×70 μm mesas of ZnSe on GaAs). This is because the lateral forces acting on TDs are proportional to the mesa thickness. We also conducted a preliminary study of the mismatch dependence of PHP. Our results suggest that PHP removes TDs more effectively in the higher lattice mismatch system ZnSe/GaAs (001) than in the lower lattice mismatch system ZnS0.02Se0.98/GaAs (001). This is expected based on the mismatch dependence of the line tension forces in the misfit segments of dislocations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446227
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  • 4
    Electronic Resource
    Electronic Resource
    Densification induced dielectric properties change in amorphous BaTiO3 thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5596-5600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of amorphous BaTiO3 thin films deposited on Si substrates were studied as functions of annealing temperature. The film thickness decreased monotonically as the annealing temperature increased up to 600 °C. This reduction is believed to correlate with the densification process observed in the amorphous films during annealing. After the 500 °C annealing, a partial crystallization process was observed. It was also found that the dielectric constant and the index of refraction of the film showed significant changes as the annealing temperature increased from 400 to 500 °C. Correlations between the film density, index of refraction, and the dielectric constant are discussed. A severe reaction at the interface between the film and Si substrate was observed in the 750 °C annealed sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350538
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  • 5
    Electronic Resource
    Electronic Resource
    High charge storage in amorphous BaTiO3 thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2639-2641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high charge storage density was achieved in BaTiO3 thin films on Si substrates prepared by a reactive partially ionized beam deposition technique and rapid thermal annealing (RTA) treatment. The films, being deposited at a low substrate temperature, were amorphous. The films were then annealed by using RTA in N2 ambient at 500 °C for 1 min. After the annealing the relative dielectric constant of the films was 20 and the thickness of the films was 310 A(ring). The charge storage density of the films was calculated to be as high as 5.6 μC/cm2 at 10 V. The leakage current density was on the order of 10−7 A/cm2 at an applied electric field of l MV/cm. The potential application of this film in high density memory is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104793
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  • 6
    Electronic Resource
    Electronic Resource
    Reactive partially ionized beam deposition of BaTiO3 thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2336-2338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-source reactive partially ionized beam deposition has been employed to deposit thin BaTiO3 films on the Si(100) substrate at room temperature. It is shown that with a small amount (3%) of Ti and oxygen ions in the beam one can dramatically control the electrical properties of the films. From the capacitance versus voltage (C-V) characteristics, the flatband voltage and the total interface charge density were measured to be 0.3 V and 1×1011/cm2, respectively. These ferroelectric compound oxide thin films with high-dielectric constant are potentially useful in high density memory applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104169
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  • 7
    Electronic Resource
    Electronic Resource
    Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2443-2445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means. The PIB contained 0.8–1.2% of Al self-ions and a bias potential of 2–5 kV was applied to the substrate during deposition. The enhancement of the electromigration resistance of the Al films is believed to be associated with the strong preferred orientation (in the [111] direction) that these films have. Surprisingly the preferred orientation effect is not accompanied by an enlargement of the Al grain size. This combination of preferred orientation and small grain size may find important applications in future very large scale integrated metallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101085
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  • 8
    Electronic Resource
    Electronic Resource
    Resonance Raman scattering as a probe of electron-nuclear coupling: applications to heme proteins (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 3391-3398 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100161a077
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  • 9
    Electronic Resource
    Electronic Resource
    Simple and high-yield method for synthesizing single-crystal GaN nanowires (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1961-1963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and high-yield method involving vapor-liquid-solid wire-like growth mechanism was developed for the synthesis of GaN nanowires. In this process, the mixture of Ga and SiO2 reacted with ammonia in the presence of the Fe2O3 catalyst supported by Al2O3. The x-ray powder diffraction measurement and transmission electron microscopy observations confirmed that the synthesized GaN nanowires are single-crystal hexagonal wurtzite structure with diameters ranged from 10 to 50 nm and lengths up to several micrometers. Based on the fact that a small Fe dominant particle attached to one end of some nanowires, a growth model of the GaN nanowires was proposed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312853
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  • 10
    Electronic Resource
    Electronic Resource
    Complete removal of threading dislocations from mismatched layers by patterned heteroepitaxial processing (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2524-2526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effectiveness of patterned heteroepitaxial processing (PHP) in removing threading dislocations (TDs) from ZnSe epitaxial layers grown on GaAs substrates by metalorganic vapor phase epitaxy. The PHP approach used here involves postgrowth patterning of continuous epitaxial layers followed by annealing. In this study, each as-grown ZnSe/GaAs sample was first cut into pieces forming four types of samples, namely: (1) as grown, (2) postgrowth annealed, (3) postgrowth patterned, and (4) PHP prepared (patterned and annealed). The epitaxial layers with thicknesses of 2000–6000 Å were patterned to create 500–6000-Å-high and 3–70-μm-wide square mesas that were separated by 20 μm trenches. TD densities were determined by the etch pit density (EPD) technique and comparisons were made between the four types of samples. The first three types of samples exhibited EPDs of approximately 107 cm−2, which indicate that neither patterning alone nor annealing alone was effective at reducing TDs. In contrast, PHP resulted in a complete removal of TDs from 70 μm×70 μm square layers with thicknesses of 〉3000 Å. This corresponds to an EPD less than 2.0×104 cm−2, and at least a 500-fold reduction compared to as-grown layers; in fact, this value is even lower than that of the GaAs substrate (EPD=105 cm−2). Thus TDs can be removed in PHP by glide to the sidewalls, as promoted by the presence of image forces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319178
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