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Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation (2000)

Ohshima, T. ; Abe, K. ; Itoh, H. ; [et al.]

Springer

Applied physics 71 (2000), S. 141-145

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ISSN: 1432-0630

Keywords: PACS: 61.72.Ww; 74.25.Fy; 74.62.Dh

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract. Phosphorus ion (P+) implantations into 6H-SiC at room temperature (RT), 800 °C, and 1200 °C with mean concentrations of 1×1018–5×1019 /cm3 were performed to investigate the effects of hot-implantation on the electrical activation of P atoms. Improvement of the electrical activation of P atoms due to hot-implantation is found to depend on their implantation concentration, which can be divided into three regions. In the implantation with P in a low-concentration region (for example, 1×1018 /cm3), no significant difference in the carrier concentrations among the samples implanted at RT and elevated temperatures is observed after annealing above ≈1400 °C. In a medium-concentration region, the carrier concentration increases with implantation temperature. When P ions were implanted in a high-concentration region (for example, 5×1019 /cm3), the hot-implanted samples exhibit higher carrier concentration as compared with RT-implanted samples. Regarding hot-implantation, the carrier concentration in 800 °C-implanted samples is higher than that in the 1200 °C-implanted samples. This results can be interpreted as a degree of damage introduced by each implantation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s003390050043

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