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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characterization of ZnO ceramics by scanning tunneling spectroscopy and beam-induced current in the scanning tunneling microscope (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1874-1877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlative study of the electrically active grain boundary structure of ZnO polycrystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. Current imaging tunneling spectroscopy (CITS) measurements reveal reduced surface band gaps, as compared with grain interiors, at the charged boundaries imaged by SEM-based remote electron beam induced current (REBIC). ZnO grain boundaries were also imaged in the STM-REBIC mode with a resolution of up to 20 nm. The contrast differences observed in the SEM-REBIC and STM-REBIC images are discussed in terms of the different experimental conditions used in both techniques. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370982
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  • 2
    Electronic Resource
    Electronic Resource
    Cathodoluminescence of electron irradiated opal-based nanocomposites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3659-3661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synthetic opals infilled with silicon (opal-Si) and with Si and Pt (opal-Pt-Si) have been irradiated in a scanning electron microscope under high excitation conditions. Electron irradiation-induced changes in the morphology and luminescent defect structure of both types of nanocomposites were assessed by scanning electron microscopy and by cathodoluminescence (CL) microscopy and spectroscopy. Irradiation causes strong morphological changes in the ordered structure of the matrix and quenching of the nanocrystals-related CL emission in the opal-Si samples. On the contrary, such effects are not observed in the opal-Pt-Si nanocomposites. In both types of samples, electron irradiation induces the appearance of a CL band centered at 2.95 eV, attributed to complex centers involving oxygen vacancies in the silica spheres forming the matrix. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390307
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  • 3
    Electronic Resource
    Electronic Resource
    Homogeneity assessment of YBa2Cu3O7−x single crystals by cathodoluminescence microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 998-1001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) of YBa2Cu3O7−x single crystals has been investigated in the scanning electron microscope. Some regions of the crystals, generally related to steps or other growth features, show enhanced CL intensity. Spectra show the presence of two emission bands centered at about 2.85 and 2.3–2.4 eV, respectively. In the regions of higher CL intensity, the 2.3 eV band, which has been attributed to defects in the oxygen sublattice, shows a higher relative intensity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362913
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of charged defects in CdxHg1−xTe and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2129-2131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlative study of the electrically active defects of CdxHg1−xTe and CdTe crystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined system. Charged structural and compositional defects were revealed by the remote electron beam induced current (REBIC) mode of the scanning electron microscope. The electronic inhomogeneities of the samples were analyzed with nm resolution by current imaging tunneling spectroscopy (CITS) measurements, which showed the existence of built-in electrostatic barriers as well as local variations of the surface band gap in the defect areas imaged by REBIC. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121298
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  • 5
    Electronic Resource
    Electronic Resource
    Remote electron beam induced current imaging of electrically active regions in YBa2Cu3O7−x single crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2830-2832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in YBa2Cu3O7−x single crystals. Enhanced REBIC contrast, found in growth steps and other topographic features of the samples, is discussed in terms of charged oxygen-related defects. The capability of REBIC to image structural inhomogeneities caused by strain or plastic deformation in these crystals is also established. Charge carrier diffusion length has been estimated at different temperatures from REBIC linescan profiles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120419
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  • 6
    Electronic Resource
    Electronic Resource
    Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2720-2726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synthetic opals—composed of 250 nm amorphous silica spheres closed packed in a face centered cubic structure—have been infilled with silicon, platinum, and with Si and different Pt contents. The luminescent properties of these composites have been investigated by cathodoluminescence (CL) microscopy and spectroscopy. CL emission is influenced by the material used to infill the pores of the opal matrix. CL spectra of all the samples investigated show two well-known bands, associated with the defect structure of the silica spheres, centered at about 1.9 and 2.7 eV, respectively. Emission in the 2.15–2.45 eV range, particularly intense in opal-based composites with a high Pt content, is tentatively associated with SiO2 defects involving silicon clusters. A CL band peaked at about 3.4 eV as well as a band in the 1.50–1.75 eV range, whose peak position seems to be affected by the Pt content of the samples, are associated with the presence of Si nanocrystals. The behavior of these emissions suggests that both are related to defect states at the interface between Si nanocrystals and SiO2 forming the opal spheres. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346653
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  • 7
    Electronic Resource
    Electronic Resource
    Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3194-3196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt–Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5–0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325387
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  • 8
    Electronic Resource
    Electronic Resource
    Correlative SEM/STM Study of Local Electronic Properties in Compound Semiconductors (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 63-64 (Dec. 1998), p. 273-282 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.63-64.273.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Cathodoluminescence from Nanocrystals in Mechanically Milled Silicon (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 78-79 (Apr. 2001), p. 103-110 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.78-79.103.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Electron beam induced structural changes in Bi2Sr2CaCu2O8+x studied by cathodoluminescence microscopy and secondary electron emission (1997)
    Springer
    Applied physics 64 (1997), S. 361-366 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 74.72.Hs; 78.60.Hk; 79.20.Hx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 Sr2CaCu2O8+x superconducting ceramics have been irradiated in the scanning electron microscope (SEM), and the irradiation-induced effects investigated by cathodoluminescence (CL), secondary electron emission (SEE) and X-ray microanalysis. Electron beam irradiation causes a slight Bi depletion and an inhomogeneous Ca distribution. A higher CL intensity emission is found in the irradiated areas, where besides an enhancement of the oxygen content related 2. 4 eV band, another CL bands probably related to new non-superconducting phases induced by irradiation can be observed. SEE yield measurements allow to detect an oxygen depleted region surrounding the irradiated areas. X-ray microanalysis shows that this intermediate region retains the cationic composition of the unaffected material. CL spectra from bright zones inside the same area also show a dominant 2. 4 eV emission band, which supports its relation with oxygen deficiency or rearrangement in high- superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050491
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