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  • 1
    Electronic Resource
    Electronic Resource
    Stability of Aircraft Turbine Fuels (1954)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 46 (1954), S. 2166-2173 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50538a046
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  • 2
    Electronic Resource
    Electronic Resource
    Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2502-2506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keV. An overall good agreement is found between the experimental results and the theoretical predictions by Biersack, Ziegler, and Littmark. It is also observed that a variation in the implantation dose does not affect the projected range and range straggling results, despite the fact that chemical modification of the implanted polymer layer is detected. In addition, we find that a shallow implantation of the polymer film with Bi ions increases the temperature at which the photoresist starts to decompose. Finally, at 300 °C the implanted Bi atoms diffuse preferentially toward the bulk. For this temperature, two different diffusion coefficients are estimated, one for the damaged region Dd=1.2×10−5 cm2/s and another for the bulk Db=1.2×10−14 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341029
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  • 3
    Electronic Resource
    Electronic Resource
    Mass and energy dependence of implanted ion profiles in the AZ111 photoresist (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1322-1324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Profiles of Bi, Xe, Sn, Kr, Ga, Fe, K, Ar, P, Na, and F implanted into the AZ111 photoresist are compared with recent theoretical predictions. With the exception of the noble gases and F, the experimental results are well fitted by the Biersack–Haggmark [Nucl. Instrum. Methods 174, 257 (1980)] Monte Carlo calculations. For the noble gases we obtain ranges up to a factor of 2 shorter than the above predictions. Fluor changes the profile as function of energy, being nearly Gaussian at 30 keV and distributing according to the calculated ionization at 70 keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337304
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  • 4
    Electronic Resource
    Electronic Resource
    Distributions of light ions and foil destruction after irradiation of organic polymers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 668-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that light ions (6Li, 10B) distribute neither according to their calculated range nor to their nuclear damage distributions but according to their ionization distributions after implantation into organic polymers. Also, the profile of chemical destruction after low dose light ion implantation (typically 1012–1014 ions/cm2) into organic foils obeys the ionization distribution rather than the range or nuclear damage distributions. After annealing, or at higher implanted doses, a slight shift of the implantation or destruction profiles towards the nuclear damage distribution is found. The reason for this implantation behavior may be partly understood in terms of diffusion and subsequent recombination with the created radicals. Li and B distributions in carbon (which may be regarded as the final product of polymer destruction) show a shape which can be described by range profiles with subsequent diffusion and trapping at homogeneously distributed defects. In contrast to light ions, implanted heavy ions distribute in polymers essentially according to their range profiles, due to negligible diffusion after implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336180
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal behavior and range distribution of 209Bi implanted into the Al/V bilayer structure (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4431-4434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 350-keV 209Bi+ was implanted into an Al (1000 A(ring))/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (trim code). Diffusion coefficients for Bi in both the V substrate of the Al/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °C. The results show that the Bi ions follow a hindered diffusion at the Al film of the Al/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340161
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  • 6
    Electronic Resource
    Electronic Resource
    Implanted boron depth profiles in the AZ111 photoresist (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2083-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotope 10B has been implanted into the photoresist AZ111 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 10B(n,α)7Li reaction. At 60 keV, the profile changes from a regular shape to one with an additional tail directed towards the surface. Despite the nonregular shape of the ion distributions, it is possible to extract the characteristic range parameters such as projected range Rp, most probable range Rˆ, and full width at half-maximum. Good agreement is found between the experimental results and the calculations by Ziegler, Biersack, and Littmark (ZBL). It is also shown that the tail distribution follows closely the ZBL calculated ionization profiles. A tentative explanation of this behavior is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341112
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  • 7
    Electronic Resource
    Electronic Resource
    Reconstruction of three-dimensional range distributions by a modified tomographic technique (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 958-964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First, an overview of the present state of art of imaging of three-dimensional particle (or damage) distributions in the field of ion implantation is given. Usually, the direct measurement of three-dimensional distributions in the field of ion implantation is restricted to cases when the impinging ion beam diameter is small against the size of the corresponding distributions, i.e., to ion energies above typically 100 MeV and to microbeams of a few μm diameter. To gain information also for lower ion energies without the restriction in the beam diameter, a modified tomographic reconstruction technique has been developed recently by us and is described here in detail. Three-dimensional distributions are reconstructed from a number of one-dimensional depth profiles, implanted under various angles. Competing algorithms for the solution are discussed. For the mathematical technique chosen, some consistency tests are presented. Good accuracy of a sufficient number of input profiles is vital for the quality of the three-dimensional reconstruction
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346660
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  • 8
    Electronic Resource
    Electronic Resource
    Ion radiation induced diffusion of Xe implanted into a polymer film (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5139-5144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post-bombarded the Xe implanted samples at a fixed Ar ion energy, covering a wide range of fluences. In addition, the implantation fluences, as well as the ion species used in the bombardment, were changed. The results show that the radiation induced diffusion process undergoes a trapping-detrapping mechanism. The trapping probability is proportional to the implanted fluence, and the detrapping one depends on the kind of ion used in the bombarding experiment. Finally, it is shown that the nuclear energy transfer plays an important role in the radiation induced diffusion mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352044
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  • 9
    Electronic Resource
    Electronic Resource
    Depth profile and thermal annealing behavior of Bi implanted into an Al/Ti bilayer structure (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 659-662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 600-keV Bi was implanted into an Al/Ti bilayer structure. There is good agreement between the Bi depth profile measured by Rutherford backscattering and corresponding theoretical prediction (Monte Carlo code trim). After annealing at low temperatures, the pronounced structure of Bi concentration at the Al/Ti interface vanishes, and the buildup of a surface precipitation is observed. At 500 °C annealing, strong Bi diffusion sets in, associated with the intermixing of the substrate components. A thin oxide layer present at the surface acts as a diffusion barrier for Bi, resulting in Bi segregation at the oxide/alloy interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336178
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  • 10
    Electronic Resource
    Electronic Resource
    Separation of Cracked Gasolines by Chromatographic Adsorption. Adsorbent Characteristics and Regeneration Techniques (1950)
    s.l. : American Chemical Society
    Analytical chemistry 22 (1950), S. 850-851 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60043a002
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