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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous interface states were caused by post-oxide rapid thermal annealing in an n+ polycrystalline silicon metal-oxide-semiconductor capacitor. These anomalous interface states have been investigated using high/low frequency capacitance/gate voltage (C/V) measurements. An additional annealing process (450 °C, 30 min in 90% N2/10% H2 mixed gas) was found to improve the anomalous interface states. The improved results were identified using a constant current injection stress test.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3943-3947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication, performance characteristics, and design rules of buried-facet optical amplifiers are described. Chip gain of 25 dB, gain ripple of 〈1 dB, and gain difference of ≤1 dB for TE- and TM-polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. The performance of buried-facet amplifiers is comparable to that of cleaved-facet amplifiers with very good antireflection (R〈10−4) coatings. The buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 7832-7841 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The multiphoton dissociation processes of acetylene via a two-photon resonant predissociative state, v=0 of 1Σ+g, have been studied by three techniques: time-resolved photofragment excitation spectroscopy (TRPFES), laser-induced fluorescence (LIF) of the C2 fragments, and dispersed emission. We found that the major dissociation products are H atoms, H2 molecules, and C2 molecules in the X 1Σ+g, a 3Πu and A 1Πu states; among the latter, C2 X 1Σ+g molecules are formed by a sequential bond–rupture mechanism whereas some C2 in a 3Πu is formed by a concerted two-bond fission process. Other, minor dissociation channels due to three-photon processes, such as C2(d 3Πg)+2H(2S(1)/(2)), C2(d 3Πg)+H2(X 1Σ+g), C2(C 1Πg)+H2(X), C2(e 3Πg)+H2(X), and C2(D 1Σ+u)+H2(X), were also detected. In the 2+1 concerted dissociation yielding C2(C 1Πg)+H2(X), a long-lived intermediate C2H2, likely a cis isomer or other conformer in which the hydrogen atoms are relatively close to each other, was revealed by TRPFES; its zero-pressure lifetime was estimated to be (8±1) μs. A long-lived intermediate C2H was also found in the 2+1 sequential dissociation by TRPFES.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5863-5865 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High field (up to 5 T) magnetization measurements were performed on both bulk and field-aligned powder samples of RNi2B2C (R=Dy, Ho) magnetic superconductors. For Tc=3.8 K, a DyNi2B2C superconductor with antiferromagnetic Néel temperature TN of 10–11 K, and anomalous field-induced weak-ferromagnetic transitions were observed above the superconducting upper critical field Hc2(2 K) of 1.75 kG. The aligned powders show distinct hysteresis characteristics for both fields applied parallel and perpendicular to the tetragonal basal plane. For Tc=7.8 K, HoNi2B2C has an incommensurate magnetic ordering temperature Tm of 6 K and TN of 5.2 K. Anomalous field-induced weak-ferromagnetic transitions were also observed below TN. No hysteresis can be detected for TN〈T〈Tm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 659-660 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of optical gain and spontaneous emission of optical amplifiers show that the latter is a good measure of the former. A device structure is fabricated where a photodetector is integrated next to the amplifier. A fraction of the spontaneous emission from the amplifier impinges on the photodetector in this device producing a photocurrent. The photodetector current is found to be a monotonic function of the amplifier gain. Hence, the photodetector output can be used to monitor the performance of the amplifier.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2050-2057 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface properties of plasma-enhanced chemical-vapor-deposited dielectric SiON on GaAs systems pretreated by NH3 plasma were studied. The effects of the process parameters in the NH3 plasma pretreatment, such as total pressure, radio-frequency power, substrate temperature, NH3 flow rate and pretreatment time, were investigated by the measurements of Auger electron spectroscopy, Raman spectroscopy, current-voltage, and capacitance-voltage characteristics. The transient region width and the surface strain field, surface leakage current, hysteresis, and degree of Fermi-level pinning evidently related to interface properties, are increased with increasing total pressure, decreased with increasing radio-frequency power, substrate temperature, and pretreatment time, and independent of NH3 flow rate. The physical and electrical properties of SiON/GaAs interface have been significantly improved under an optimum NH3 plasma pretreatment condition. The correlation of these parameters in pretreatment process with the interface properties including interdiffusion, surface strain field, surface leakage current, hysteresis, and Fermi-level pinning are discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3778-3782 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface properties of plasma-enhanced chemical vapor deposited SiOxNy/n-GaAs metal-insulator-semiconductor systems are investigated by capacitance-voltage and deep level transient spectroscopy measurements. At room temperature, these metal-insulator-semiconductor devices exhibit deep depletion mode operation which is characteristic of the low thermal generation rate for minority carriers in GaAs and the large number of traps located at or near the interface. For accumulation mode bias voltage, the small signal capacitance does not approach the SiOxNy capacitance and exhibits anomalous frequency dispersion behavior. A simple method is used to correlate the capacitance-voltage and deep level transient spectroscopy data. An interface-state band model best fits the experimental results.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2184-2186 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermal conversion mechanism of semi-insulating GaAs with a SiOxNy cap was studied. Both SiO- and SiN-rich cap films exhibit n-type conductivity after thermal annealing, and a newly discovered level Ec−0.91 eV is present in these converted samples found by deep-level transient spectroscopy measurements. This conversion phenomenon may be attributed to Ga out-diffusion through the cap layer during thermal annealing.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3058-3059 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant gate induced drain leakage caused by post-oxide rapid thermal annealing (RTA) was studied in this letter in comparison with the non-RTA process for n-channel metal-oxide- semiconductor field effect transistor. It is found that the sub-breakdown leakage increases with increasing RTA temperature. We proposed that interface states and recombination centers generated after RTA are the dominant factors in the enhancement of the leakage current. In addition, it is found that RTA has no effect on the avalanche breakdown voltage.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3966-3969 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal processing with a controlled cooling ramp as a postoxidation annealing in nitrogen is of considerable influence on the quality of thin (6 nm) thermal oxides. We studied how the annealing condition affected the electrical characteristics of the dielectrics, the charge-trapping properties, the gate voltage shift ΔVG, the flat band voltage shift ΔVFB, the increase of midgap interface state density ΔDitm under high field stress, the charge to breakdown, and the breakdown field. We found that controlled cooling after oxidation improved the interface between silicon and silicon dioxide. The postoxidation annealing in nitrogen reduced the fixed charge in oxides. The above measurements were correlated.
    Type of Medium: Electronic Resource
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