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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1376-1381 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown and studied CuGa(Se,Te)2 photovoltaic bulk materials and thin films. This compound can readily be grown with p-type conductivity and can have a very good lattice match with CdS for a Se:Te ratio giving an energy gap close to 1.5 eV. The lattice parameters were determined by x-ray diffraction, and the energy gap calculated for temperatures between 77 and 300 K from luminescence studies. Thin films were grown using a close-spaced vapor transport technique, with iodine as reagent. The chemical equations governing the transport were determined. Good-quality CuGaSe2 thin films were easily grown, but we could not get CuGa(SexTe1−x)2 thin films when x〈0.5. This result was explained from the CuGaTe2 phase diagram. Thermal evaporation experiments gave us similar results, but flash evaporation gave us thin films with a composition close to the source composition.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2206-2210 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper relates different points concerning defect levels and lattice defects in CuInSe2 and the I-III-VI2 compounds. First, we review the main levels observed. Second, we propose a hypothesis concerning the electrical compensation processes acting in the I-III-VI2 materials. Third, we discuss the nature of the defects responsible for the levels, and improve interpretations, by carrying out the deformation potential in antisite defects. Especially, these calculations reinforce the idea that the "hydrogenic-type'' acceptor observed in the I-III-VI2 materials must rather be attributed to the Cu or Ag vacancy than to an antisite defect.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5710-5715 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we study (In,Se)–Cu(In,Ga)Se2/SnO2 thin film heterostructures for solar cells, the light coming through SnO2. The Cu(In,Ga)Se2 layers were grown by close-spaced vapor transport and the (In,Se) layers by close-spaced sublimation. We first clear up the main results obtained in the fabrication and characterization of the samples. Then, the diffusion mechanisms appearing in these structures are studied, from secondary ion mass spectroscopy studies. Copper diffusion is probably the key of the creation of a p–n junction lying near SnO2 and responsible for the photovoltaic effect that is observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 589-595 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present work is an improvement of a close-spaced vapor transport method to deposit CuInSe2 thin films in a closed vertical reactor. The study concerns two points: (i) the determination of the actual source (Ts) and substrate (Td) temperatures from experimental values measured in accessible points. For that, the equivalent thermal circuit of the reactor was established, and the equations were written to deduce Ts and Td. (ii) The determination of the process governing the mass transfer, from experimental values of the deposition rate measured as a function of Ts and Td. In our experimental conditions, the transport is limited by the reaction kinetics, not by the diffusion. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 825-829 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Possible photovoltaic effects in CuInSe2(and related materials)/SnO2 thin film structures are discussed with the CuInSe2 layer grown by close-spaced vapor transport while the growth temperature increases. This procedure can particularly induce a photovoltaic effect having the positive polarity on SnO2, making this type of structure interesting in CuInSe2-type solar cells. The discussion is supported by electron-beam induced current studies and x-ray photoelectron spectroscopy. The band offsets of SnO2–CuInSe2 and CuInSe2–(In,Se) heterojunctions were determined, and energy-band diagrams drawn. (In,Se) involves InSe or In2Se3 phases, and possibly Cu-poor phases, which form in the layer when increasing the growth temperature. Finally, the photovoltaic effect, having the positive polarity on SnO2, is ascribed to either a shallow (from SnO2) p-n CuInSe2 homojunction or a shallow p CuInSe2-n (In,Se) heterojunction. The n-type doping of CuInSe2 could be due either to diffusions during the growth or stoichiometry variations. Taking into account the heavy doping of n SnO2 and p CuInSe2, the energy-band diagrams of these shallow junctions can be compared to a Schottky diode with a barrier increased by the p-type doping. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1126-1129 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have done a deep-level transient spectroscopy study of deep donor traps existing in n-type GaAs epitaxial layers grown by close-spaced vapor transport. All the samples exhibited a bulk trap having an important concentration ((approximately-greater-than)1014 cm−3), which we have noted ELCS1 and identified with the trap EL12, which was observed in vapor-phase epitaxy materials. Other bulk traps were observed in some samples, but in a weaker concentration (∼1013 cm−3). In other samples, in addition to ELCS1, two more traps were seen; their concentration increased towards the surface. One of them is probably localized near the surface; the other one (ΔEa=0.83 eV, σna=0.8×10−13 cm2) must be identified with the donor trap EL2; it is also present in the bulk, but with a lower concentration.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1544-1547 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A luminescence study of energy levels due to lattice defects in AgInS2, which belongs to the I-III-VI2 compounds, is reported in this article. As-grown and annealed crystals under maximum or minimum sulfur pressure have been used. We have found a donor level at 70 meV, an acceptor level at 70 meV, and a level (acceptor or donor) at 100 meV. Two of these levels (at least) are attributed to the sulfur vacancy.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Aquaculture research 32 (2001), S. 0 
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Oyster greening was first described in the seventeenth century as a natural phenomenon. However, it has recently been discovered that the diatom Haslea ostrearia Simonsen causes greening by synthesis of a blue pigment designated as ‘marennine’. This phenomenon, which involves massive proliferation of H. ostrearia in oyster ponds, was not understood or controlled by oyster farmers in the Marennes-Oléron region (Atlantic coast of France). As greening oysters improved their market value, they tried to develop empirical methods to guarantee oyster fattening and improve profits. In this context, the present study investigated the feasibility of mass culture of diatoms outdoors in 10-m3 ponds, using enriched seawater. Different biotic and abiotic parameters were monitored daily to determine the influence of the day–night temperature range. After 8 days, H. ostrearia was the dominant diatom species (66%), reaching a mean cell concentration of 2 × 105 cell mL−1 and a marennine concentration of 3.4 mg L−1. Although intensive greening was obtained, further studies are required to optimize the production stages before this technology can be transferred to oyster farmers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 42 (1981), S. 449-454 
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 46 (1985), S. 25-31 
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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