ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have done a deep-level transient spectroscopy study of deep donor traps existing in n-type GaAs epitaxial layers grown by close-spaced vapor transport. All the samples exhibited a bulk trap having an important concentration ((approximately-greater-than)1014 cm−3), which we have noted ELCS1 and identified with the trap EL12, which was observed in vapor-phase epitaxy materials. Other bulk traps were observed in some samples, but in a weaker concentration (∼1013 cm−3). In other samples, in addition to ELCS1, two more traps were seen; their concentration increased towards the surface. One of them is probably localized near the surface; the other one (ΔEa=0.83 eV, σna=0.8×10−13 cm2) must be identified with the donor trap EL2; it is also present in the bulk, but with a lower concentration.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343049
