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  • 1
    Electronic Resource
    Electronic Resource
    Shock Tube Study of the Reaction between CH3 and H2 (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 15925-15929 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100043a034
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic and microstructural properties of CoCrTa/Cr/Al thin films (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5357-5357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoCrTa/Cr/Al and CoCrTa/Cr thin films were deposited on glass substrate at 280 °C using dc magnetron sputtering. The coercivity of CoCrTa/Cr films increased by introducing an Al underlayer. In 500 A(ring) CoCrTa/Cr films, the coercivity increased with increasing Cr thickness and saturated above 700 A(ring) Cr thickness (Hc=1050 Oe). On the other hand, in 500 A(ring) CoCrTa/Cr/700 A(ring) Al films, the coercivity increased sharply with increasing Cr thickness and showed a maximum value at 700 A(ring) Cr thickness (Hc=1380 Oe). The coercivity squareness of the CoCrTa/Cr/Al and CoCrTa/Cr films was increased with increasing Cr thickness. The coercivity squareness of CoCrTa/Cr/Al films was lower than that of CoCrTa/Cr films. To study the origin of coercivity enhancement in CoCrTa/Cr films when deposited on an Al underlayer, microstructures of the two films were investigated using transmission electron microscopy (TEM). We controlled grain sizes of CoCrTa films by changing the thickness of the Cr layer. The grain size of CoCrTa films increased with increasing Cr thickness. The coercivity of CoCrTa/Cr/Al films showed a maximum value at a grain size of 430 A(ring). These results suggest that the transition from single domain to multidomain could occur at a grain size of ∼400 A(ring). To understand the coercivity squareness changes by the introduction of an Al underlayer, the angular variation of coercivity was measured. The magnetization of CoCrTa/Cr films was reversed by domain wall motion.On the other hand, by the incorporation of an Al underlayer, the angular variation of coercivity deviated from the domain wall motion mode. Cross-sectional TEM studies of CoCrTa/Cr/Al films showed that Cr atoms in Cr layers diffused into an Al underlayer and Al atoms were detected in both Cr and CoCrTa layers, but magnetization of the magnetic layer was not decreased. The decrease in coercivity squareness of CoCrTa/Cr/Al films would be attributed to magnetic decoupling by segregation of Al atoms in grain boundaries of CoCrTa films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361324
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of surface topology and texture on exchange anisotropy in NiFe/Cu/NiFe/FeMn spin valves : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6228-6230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of texture and interfacial roughness on the exchange anisotropy in NiFe/Cu/NiFe/FeMn spin valves with different buffer layers (no buffer, Cu, or FeMn) on Si(100) or Si(111) substrates by magnetron sputtering. The crystalline structure, surface topology, and exchange anisotropy field (Hex) were characterized. The exchange anisotropy was established all in (111), (200), and (220) textured samples and there was no systematic relationship between the type of texture and Hex. However, it was found that Hex increased as the surface roughness decreased. The results lead us to believe that interfacial roughness rather than crystallographic texture controls the development of the exchange anisotropy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361891
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  • 4
    Electronic Resource
    Electronic Resource
    Interlayer coupling field in spin valves with CoFe/Ru/CoFe/FeMn synthetic antiferromagnets (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7612-7615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (P1−P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As the free layer thickness decreased from 70 to 20 Å, the interlayer coupling field was increased due to the magnetostatic coupling (orange peel coupling). In the case of the thickness difference in the pinned layers, the interlayer coupling field agreed with the modified Néel model suggested in the top synthetic spin valve structures. However, in the case of tP1=tP2, and tP1=tP2+5 Å, it was found that the interlayer coupling field could not be explained by the modified Néel model. The deviation of the modified Néel model at the dip zone could be due to the large canting of the pinned layers, which depend on applied field and different thickness in synthetic antiferromagnetic structure. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of the interlayer coupling field was obtained when the Cu thickness is 32 Å. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361056
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  • 5
    Electronic Resource
    Electronic Resource
    Transition of the anisotropic magnetoresistance of permalloy films from the negative to the positive along with thickness (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5786-5788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic magnetoresistance of dc magnetron-sputtered Ni80Fe20 permalloy films showed the evolutionary transition of the sign, from the negative magnetoresistance to the positive magnetoresistance (PMR), as the thickness increases. A similar phenomenon with the angle between the field and the current was recently reported. In our study, however, the transition occurred in the transverse measurement at the fixed angle of 90°. Ni80Fe20 films were deposited on Si substrates in a magnetic field of 300 Oe at the ambient temperature and at the deposition rate of 4 Å/s. Because the PMR was known to be peculiar to the longitudinal measurement, it was investigated why the PMR in the transverse measurement occurred. By a vibrating sample magnetometer and magnetic force microscope, the PMR curve in the transverse measurement was found to be related to the canted hysteresis loop peculiar to the stripe domains caused by the perpendicular anisotropy. Unanticipated magnetostrictive strain by the compositional fluctuation and/or the effect of surface roughness was suggested as a plausible mechanism of the perpendicular anisotropy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369919
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of the 1.356 eV band and stoichiometry in undoped GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 736-741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the 1.356 eV emission band measured by photoluminescence (PL) is investigated by correlating the Hall measurement data for the same materials. The crystals grown by the horizontal-Bridgman technique were As or Ga rich by controlling As-zone temperatures. Type conversion from n to p type with the thermal activation energy ΔE=0.133 eV and ΔE=0.05 eV were achieved by heat treatment of the As-rich crystals. The Ev +0.133 eV level and the 1.356 eV band may not be attributed to the same defect because the Ev +0.133 eV level is electrically active with a nonradiative center and the 1.356 eV band is radiative with an electrically inactive (neutral) center. Therefore, both Ev +0.133 eV level and the 1.356 eV band were not attributed to copper impurity because copper is electrically and optically an active center in GaAs. The 1.356 eV band measured by PL may be due to a gallium-vacancy related complex, but differs from VGa -donor complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343087
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  • 7
    Electronic Resource
    Electronic Resource
    On the eigenproblems of PT-symmetric oscillators (2001)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 42 (2001), S. 2513-2530 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We consider the non-Hermitian Hamiltonian H=−d2/dx2+P(x2)−(ix)2n+1 on the real line, where P(x) is a polynomial of degree at most n≥1 with all non-negative real coefficients (possibly P≡0). It is proved that the eigenvalues λ must be in the sector |arg λ|≤π/(2n+3). Also for the cubic case H=−d2/dx2−(ix)3, we establish a zero-free region of the eigenfunction u and its derivative u′ and we find some other interesting properties of eigenfunctions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1366328
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  • 8
    Electronic Resource
    Electronic Resource
    An Approach to the Specific Cleavage of Peptide Bonds. I. The Acyl Migration in Dipeptides Containing Hydroxyamino Acids in Anhydrous Hydrogen Fluoride (1962)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 84 (1962), S. 4921-4928 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00883a059
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  • 9
    Electronic Resource
    Electronic Resource
    Significance of high-risk human papillomavirus detection by polymerase chain reaction in primary cervical cancer screening (2001)
    Oxford UK : Blackwell Science Ltd
    Cytopathology 12 (2001), S. 0 
    Details
    ISSN: 1365-2303
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Significance of high-risk human papillomavirus detection by polymerase chain reaction in primary cervical cancer screening The purposes of this study were to evaluate the incidence of high-risk human papillomavirus (HPV) infection by polymerase chain reaction (PCR) and to assess its diagnostic usefulness in primary cervical screening. PCR testing for HPV type 16, 18, 31 and 33 was performed on 1305 specimens obtained during routine cervical cancer screening. We analysed the concurrent cervical smears and biopsy, and correlated them with the HPV infection status. We also evaluated histologically-proven cases with ASCUS smears according to HPV infection. HPV DNA was identified in eight (0.7%) of 1144 cytologically normal patients; nine (10.5%) of 86 ASCUS; seven (25.0%) of 28 LSIL; 26 (78.8%) of 33 HSIL; and in all of three squamous cell carcinomas (SCC). HPV positivity was significantly associated with cytohistological diagnosis for HSIL of more. In addition, HPV-positive ASCUS cases were found to be associated with histological abnormality rather than HPV-negative. The results indicate that high-risk HPV testing by PCR could be a useful adjunct tool for Pap smear in primary cervical screening. The combination of Pap smear and high-risk HPV testing by PCR might reduce unnecessary colposcopy-guided biopsy of women with cytological diagnosis of ASCUS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2303.2001.00302.x
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  • 10
    Electronic Resource
    Electronic Resource
    Reaction between methyl and nitric oxide at combustion temperatures (1993)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 10042-10046 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100141a024
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