ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1330761
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