Library

X
Your search history is empty.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Model for calculating Tc of pluralistic magnetic component compounds (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7456-7460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A coupling model of the pluralistic magnetic component R-T intermetallic compounds (R denotes rare earth, T denotes transition metal) has been proposed by means of the mean-molecular-field analysis. Using the model, the Curie temperature Tc of (Sm1−xPrx)2Fe17 compounds has been calculated and the calculated values have been compared with the experimental values. It is found that the former are consistent with the later. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357973
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7452-7455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures and magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) were investigated by x-ray phase analysis and magnetic measurements. It is shown that Si substitution for Fe leads to a phase transition at x=0.2, and that the mean iron magnetic moment μFe of R2(Fe1−xSix)17 compounds (R=Dy, Y) decreases as Si concentration x increases; moreover, there is a maximum of dependence Tc(x) at about x=0.16. It is found that the exchange interaction constant AFeFe in R2(Fe1−xSix)17 compounds (R=Dy, Y) increases with x increasing by means of mean-molecular-field analysis of Tc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357972
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of silicon substitution on the magnetic properties of Tb2Fe17 single crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3305-3310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of single crystals Tb2Fe17−xSix (x=0, 1, 2, 3, and 3.3) by the Czochralski method is performed. The crystal structure and magnetic properties are investigated. The substitution of silicon for iron leads to the reduction of the lattice parameters, and the significant increase of the Curie temperature from 413 to 526 K. The mean field analysis shows that the Fe–Fe exchange interaction is much strengthened while the Tb–Fe one is slightly weakened by the introduction of silicon. The anisotropy constants up to the sixth order are calculated by fitting the magnetization process of the samples at 1.5 K under the field up to 65 kOe. In addition, a narrow domain wall pinning-dominated process caused by the substitution of Si for Fe is confirmed and analyzed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368484
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    An apparatus for the study of the kinetics and mechanism of hydrothermal reactions by in situ energy dispersive x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2442-2445 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and implementation of a pressure cell for the study of hydrothermal reactions by in situ energy dispersive x-ray diffraction is described. The cell permits the study of both the kinetics and mechanism of formation of a wide range of important solid-state compounds such as zeolites and other microporous solids. Reactions can be studied over a wide range of temperature (5–230 °C) and autogenous pressure [0–400 psi (gauge)] conditions. The use of this apparatus is illustrated by a study on the synthesis of a microporous tin chalcogenide phase performed on Station 9.7 of the UK Synchrotron Radiation Source. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146451
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High resolution reflectivity diffractometer on Station 2.3 (Daresbury Laboratory) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1224-1229 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high resolution reflectivity diffractometer (HRRD) has been recently commissioned on Station 2.3 at the SRS, Daresbury Laboratory. Using the instrument which is x-ray wavelength tunable, the characterization of the interface structure in an ion-assisted deposited Co/Cu multilayer has been carried out. In order to improve the electron density contrast of the sample, we have used an x-ray energy near the Cu K edge of 8.989 keV. By scanning the normal (specular), near normal (off specular), and parallel axes (transverse) of the surface, we have obtained useful reflectivity intensity data. By applying simulations to the data, we have determined a total roughness (rms) of 6.0±0.5 Å with a significant contribution from correlated interfacial roughness (4.2±0.2 Å). Other detailed structural information obtained has successfully demonstrated that the commissioned instrument is a viable tool for reflectivity studies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148754
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interfacial chemistry of Alq3 and LiF with reactive metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2756-2765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and chemistry of interfaces between tris-(8-hydroxyquinoline) aluminum (Alq3) and representative group IA and IIA metals, Al, and Al/LiF have been studied by x-ray and ultraviolet photoelectron spectroscopies. Quantum-chemical calculations at the density functional theory level predict that the Alq3 radical anion is formed upon reaction with the alkali metals. In this case, up to three metal atoms can react with a given Alq3 molecule to form the trivalent anion. The anion formation results in a splitting of the N 1s core level and formation of a new feature in the previously forbidden energy gap. Virtually identical spectra are observed in the Al/LiF/Alq3 system, leading to the conclusion that the radical anion is also formed when all three of these constituents are present. This is support by a simple thermodynamic model based on bulk heats of formation. In the absence of LiF or similar material, the reaction of Al with Alq3 appears to be destructive, with the deposited Al reacting directly with the quinolate oxygen. We proposed that in those circumstances where the radical anion is formed, it and not the cathode metal are responsible for the electron injection properties. This is borne out by producing excellent injecting contacts when Ag and Au are used as the metallic component of the cathode structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324681
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electroluminescence of doped organic thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3610-3616 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent (EL) devices are constructed using multilayer organic thin films. The basic structure consists of a hole-transport layer and a luminescent layer. The hole-transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8-hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The EL quantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue-green to orange-red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron-hole recombination and emission zones can be confined to about 50 A(ring) near the hole-transport interface. In the undoped Alq, the EL emission zone is considerably larger due to exciton diffusion. The multilayer doped EL structure offers a simple means for the direct determination of exciton diffusion length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343409
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Preparation and properties of lead-zirconate-titanate ferroelectric thin films using radio frequency planar magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3931-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead-zirconate-titanate [Pb(Zr52Ti48)O3,PZT] thin films, 0.5 μm thick, were deposited onto Pt/Si substrate at room temperature using the radio frequency planar magnetron sputtering technique. A perovskite structure in the PZT thin film was obtained after the annealing processes. The annealing temperature varied from 650 to 750 °C in this experiment to find the optimized annealing temperature. Using x-ray diffraction analysis, the lowest full width of the half maximum (110) plane was 0.23° for the sample at 650 °C annealing temperature. The values of the remanent polarization Pr and coercive field Ec of the PZT thin film were 100 nC cm−2 and 0.6 kV cm−1, respectively, at 60 Hz. The measured pyroelectric coefficient in 0.5 μm thin films was 3.12×10−4 C/m2 K at 50 °C. Their dielectric constant and loss tangent were 494 and 0.072, respectively, at 1 kHz. The surface structure of the PZT thin film was examined using scanning electron microscopy and the grain size was in the range of 0.08–0.14 μm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372437
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Radio-frequency linac-driven free-electron laser configurations (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1549-1555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent developments in accelerator technology and the optical guiding property of the free-electron laser (FEL) radiation indicate that rf linacs may be a strong contender for driving high average power FEL amplifiers. We discuss two rf linac-driven FEL configurations: the master oscillator power amplifier (MOPA) and the single-state power amplifier (SSPA). Our numerical results are obtained using the source-dependent expansion (SDE) method in the computer code shera. The SDE method and the code shera are discussed and illustrations of the MOPA and SSPA configurations presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344415
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1688-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxidative and reductive treatments of indium–tin–oxide (ITO) on the performance of electroluminescent devices is presented. The improvement in device performance is correlated with the surface chemical composition and work function. The work function is shown to be largely determined by the surface oxygen concentration. Oxygen-glow discharge or ultraviolet–ozone treatments increase the surface oxygen concentration and work function in a strongly correlated manner. High temperature, vacuum annealing reduces both the surface oxygen and work function. With oxidation the occupied, density of states (DOS) at the Fermi level is also greatly reduced. This process is reversible by vacuum annealing and it appears that the oxygen concentration, work function, and DOS can be cycled by repeated oxygen treatments and annealing. These observations are interpreted in terms of the well-known, bulk properties of ITO. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370948
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...