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  • 1
    Digitale Medien
    Digitale Medien
    Ga out-diffusion in rapid-thermal-processed GaAs with SiO2 encapsulants (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3541-3546 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of rapid thermal processing (RTP) using halogen lamps on GaAs with 50-, 200-, and 1250-nm-thick SiO2 encapsulants have been studied by capacitance-voltage, secondary-ion-mass spectroscopy, and x-ray photoelectron spectroscopy. RTP has been performed at 760 and 910 °C for 9 s. A decrease of the carrier concentration is observed near the SiO2/GaAs interface in all RTP samples. The decreased carrier concentration profile is fitted to a complementary error function diffusion profile. This indicates that the decrease of the carrier concentration by RTP is related to the Ga out-diffusion through SiO2. Furthermore, the amount of the decreased carrier concentration is found to be proportional to the doped Si concentration. These results show that the origin of the carrier concentration decrease is the formation of VGa-SiGa complex defects called the self-activated center. The amount of the Ga out-diffusion is larger in the RTP samples at 760 °C with thicker SiO2 and at 910 °C with a thinner one. This inverse relation can be explained by taking account of two different kinds of driving force, that is, interfacial thermal stress and the interfacial reaction between GaAs and SiO2. Interfacial thermal stress enhances the Ga out-diffusion in RTP at 760 °C, while interfacial reaction enhances in RTP at 910 °C through As loss.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348496
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  • 2
    Digitale Medien
    Digitale Medien
    Point defect concentrations in InGaAsP quaternary alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4140-4142 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Point defect concentrations in InGaAsP grown from liquid phases were calculated. Vacancies and antisites were taken to be dominant defects. The calculated antisite concentrations decrease with increasing band gap, while the vacancy concentrations are weakly dependent on composition. Although development of dislocations is known to be easier in InGaAsP lattice matched to GaAs than in those lattice matched to InP, the difference in the vacancy concentration between them is small when their growth temperatures are assumed to be the same. However, a high growth temperature usually adopted for InGaAsP on GaAs will result in larger vacancy concentrations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348431
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  • 3
    Digitale Medien
    Digitale Medien
    Effects of rapid thermal processing on molecular-beam epitaxy GaAs with SiOx encapsulation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2238-2244 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Variations of deep levels in Si-doped molecular-beam epitaxy (MBE) n-GaAs layers by rapid thermal processing (RTP) were investigated by deep-level transient spectroscopy. RTP was performed at 850, 910, and 1000 °C with SiOx encapsulation. Native deep levels M1 (Ec − 0.18 eV), M3 (Ec − 0.33 eV), and M4 (Ec − 0.51 eV) are annealed out by RTP at a higher temperature (1000 °C) compared with the case of capless RTP. Three electron traps NC1 (Ec − 0.36 eV), NC2 (Ec − 0.48 eV), and EL2 (Ec − 0.81 eV) are produced by RTP. After RTP at 850 and 910 °C, the concentrations of the EL2 decrease with depth from the surface and show no peculiar lateral distribution across the wafer, which is different from that of capless RTP reported previously. The formation of the EL2 is enhanced by the stoichiometry change due to the Ga outdiffusion into the SiOx film during RTP. After RTP at 1000 °C, the outdiffusion of the EL2 is observed near the surface. This result seems to be ascribed to the As loss, since it can no longer prevent the As evaporation at such high temperature. Though it has been reported previously that an N1 trap which has a broad energy level (Ec − 0.5–0.7 eV) is formed in MBE GaAs by RTP without any encapsulation, no N1 trap was observed in a SiOx-capped sample after RTP. We discuss the difference of the EL2 concentration depth profiles between SiOx-capped MBE GaAs and capless samples after RTP, considering the absence of the trap N1 in capped samples.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348702
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  • 4
    Digitale Medien
    Digitale Medien
    Calculation of point defect concentrations in GaAs grown by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1200-1202 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermodynamic chemistry of native defects is applied to molecular beam epitaxial (MBE) growth of GaAs. Following the model of Stringfellow [J. Cryst. Growth 70, 133 (1984)], we assume that the equilibrium is established at the solid-vapor interface. Calculated results show that the defect concentration is rather low, less than 1015 cm−3 under usual growth conditions and that MBE GaAs is less As-rich than those grown by organometallic vapor phase epitaxy or halogen transport vapor phase epitaxy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351806
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  • 5
    Digitale Medien
    Digitale Medien
    Stabilization of Li acceptors in ZnSe by above-band-gap photoirradiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7225-7228 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We predict by theoretical calculation that the concentration of interstitial Li (Liint) in ZnSe can be decreased, i.e., the Li acceptor (LiZn) can be stabilized by above-band-gap photoirradiation. Creation of excess electrons by the irradiation increases the occupation probability of the Liint donor level and thus the concentration of neutral Liint (Liint0). Consequently, the LiZn concentration increases because of the reaction Liint0+VZn0→LiZn0, where VZn0 and LiZn0 are a neutral Zn vacancy and a neutral Li acceptor, respectively. The carrier injection through an electrical junction will have similar effects as the photoirradiation, and thus our results indicate that the Li acceptors tend to be stable in active regions of light-emitting diodes and laser diodes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354034
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  • 6
    Digitale Medien
    Digitale Medien
    Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2531-2533 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Micro-Raman spectroscopy is applied to evaluate change of the crystal quality in molecular beam epitaxial GaAs layers on Si after rapid thermal annealing (RTA). The forbidden transverse optical phonon is observed in the GaAs layers especially near the interface. In the as-grown state, the Raman frequency of the longitudinal optical phonon shifts toward higher frequency near the interface. This blue shift indicates the existence of the compressive stress due to the lattice mismatch between GaAs and Si. On the other hand, after the RTA, the Raman peak shifts toward lower frequency. This red shift indicates that the tensile stress exists near the interface because of the difference in thermal expansion. The stress change indicates the relaxation of the lattice mismatch stress near the interface by formation of dislocations during the RTA.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351551
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  • 7
    Digitale Medien
    Digitale Medien
    Contactless characterization of the Si+ ion-implanted semi-insulating GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4088-4090 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si+ ion-implanted semi-insulating GaAs substrates have been characterized by the contactless measurement of the optically injected carrier concentration using the reflectance microwave probe method. The signal intensity decreases with dosage because of implantation damage. After rapid thermal annealing (RTA), the signal intensity becomes larger than those of the as-implanted samples. However, the signal intensity decreases with dosage even after RTA. From observation of the dosage dependence, it is found that the implantation damage is not fully annealed after RTA. The measurement with the He-Ne laser is sensitive enough to evaluate the implantation damage because most excess carriers are injected near the surface. It is found that this method is effective in evaluating the condition of the ion-implanted GaAs substrates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350836
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  • 8
    Digitale Medien
    Digitale Medien
    Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7866-7868 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Crystalline quality in a void region of a bonded silicon-on-insulator (SOI) wafer is evaluated by micro-Raman spectroscopy. Downshifting and broadening of the Si optical-phonon peak are observed at the edge of the void, while spectra within the void are little different from those outside the void. Comparison with calculated results based on the theory of the phonon localization shows that both the shift and the broadening are mainly due to structural disorder and not strain. Electrical properties in a void region are also evaluated by a laser-microwave method. The lifetime of excess carriers has its minimum value at the void edge. Those results consistently show that the SOI layer is deformed plastically rather than elastically at the boundary of the void.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356570
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  • 9
    Digitale Medien
    Digitale Medien
    Electron beam oxidation of semiconductors (one mechanism of electron beam processes) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1056-1058 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: New types of oxide layers of Si and GaAs were grown on (100) Si and (100) GaAs substrate by using an electron beam doping technique at 40–50 °C. The surfaces of the semiconductors were irradiated with a fluence of ∼5×1017 electrons cm−2 at 7 MeV. The samples were put in an isothermal circulating water bath with a thermoregulator. The electronic structure of the oxide layers was observed by an x-ray photoelectron spectroscopy (XPS). The chemical shifts between oxidized and nonoxidized Ga signals for Auger electron spectra and 3d XPS spectra were nearly equal to that in the conventional plasma-grown oxidation. It was suggested that the electron beam doping, oxidation, and epitaxy were caused by plasma reaction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99209
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  • 10
    Digitale Medien
    Digitale Medien
    X-ray photoelectron spectroscopic study of rapid thermal processing on SiO2/GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2559-2561 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of rapid thermal processing (RTP) on 200-nm-thick SiO2/GaAs interfaces have been studied with x-ray photoelectron spectroscopy. RTP has been performed at 910 °C for 9 s with the heating rate of 53 °C/s. Rapid diffusion of Ga through SiO2 occurs. The diffusion coefficient of Ga in SiO2 for RTP is found to be about two orders of magnitude larger than that for conventional furnace processing. The heating rate dependence of the Ga outdiffusion is also reported in the range 31–83 °C/s. In addition, slight loss of As is observed. These results are discussed on the basis of the RTP-induced thermal stress between SiO2 and GaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101544
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