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  • 1
    Electronic Resource
    Electronic Resource
    High pressure [4 + 2] cycloaddition reactions of 3,4-dimethoxyfuran with dichloromaleic anhydride and with cyclopropane derivatives (1986)
    s.l. : American Chemical Society
    The @journal of organic chemistry 51 (1986), S. 3729-3730 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00369a040
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  • 2
    Electronic Resource
    Electronic Resource
    The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4773-4780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and electrical properties of nonalloyed epitaxial Au-Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0.28 Ω mm and ∼7×10−6 Ω cm2, respectively. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by secondary ion mass spectroscopy (SIMS) imaging and Auger depth profiling. Back side SIMS profiles indicate deep Ge and Au diffusion into the GaAs substrate in the island regions. Ohmic contact behavior was found to depend upon both the kinetics of the reactions (localized reactions and island growth) and the thermodynamics (substantial diffusion of both Au and Ge) of the system. A model describing the coupled Au and Ge in-diffusion with respect to the GaAs substrate is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352089
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  • 3
    Electronic Resource
    Electronic Resource
    Shallow ohmic contact to both n- and p-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 754-756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A shallow Pd/Ge/Ti/Pt/ohmic contact for both n- and p-GaAs has been investigated. The contacts were rapid thermally annealed in N2 for 15 s at temperatures from 350 to 550 °C. The lowest average specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω cm2 for the n- and p-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018 cm−3 and the p-GaAs was doped with carbon to 5×1019 cm−3. Electrical measurements and Auger depth profiles showed that the contacts were stable as they remained ohmic after an anneal at 300 °C for 20 h for both n- and p-GaAs. The p contact is more stable than the n contact at the higher temperatures where there is more As outdiffusion as determined by Auger depth profiles. Transmission electron microscopy showed that the interfaces between the p-GaAs and the contacts were smooth for both as-grown and annealed samples, and no oxides were detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355248
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  • 4
    Electronic Resource
    Electronic Resource
    Ion–ion recombination studies in ambient helium and argon at atmospheric densities (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6328-6334 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured the dependence on gas density of the recombination rate for the reaction H3O+(H2O)n+NO−3→neutrals for n=2,3 in helium at densities from 0.3 to 1.2 NL and in argon from 0.2 to 0.9 NL (NL =Loschmidt's number). We find that three-body recombination accounts for only part of the total observed recombination rate. The enhancement of mutual neutralization by the ambient gas appears to dominate the recombination process at low densities. A simple model is given which reproduces the experimental data fairly well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456349
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  • 5
    Electronic Resource
    Electronic Resource
    Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4027-4031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and selected area electron diffraction pattern (SADP) measurements were carried out to investigate the ordered structures near ZnTe/GaAs heterointerfaces, and Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) measurements were performed to determine the compositions of the ZnTe/GaAs interfacial layer. The SADP showed two sets of {〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12} extra spots with symmetrical intensity, and the corresponding high-resolution TEM image showed doublet periodicity in contrast of the {111} lattice planes. The results of the SADP and the high-resolution TEM measurements showed that a CuPt-type ordered (Cd, Zn)Te structure was observed near the ZnTe/GaAs heterointerface, and the AES and SIMS results showed that the ordered structure was formed due to the diffusion of Cd atoms into the ZnTe layer. Two variants, one for each direction of the doublet periodicity on the {111} lattice, were observed in the ordering, and each variant had its own domain structure with a similar probability. The formation of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface originated from both the existence of the Cd residual impurities during the initial growth stage of the ZnTe epilayer and the strain relaxation of the ZnTe epilayer. These results can help to improve the understanding of the microstructural properties of the ZnTe/GaAs heterointerface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405820
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  • 6
    Electronic Resource
    Electronic Resource
    Recombination of Xe+ with F− ions in ambient helium (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4868-4873 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rate coefficients for the ion–ion recombination process Xe++F−+He→XeF*+He have been determined in ambient helium gas in the density range from 0.2 to 0.7 NL (Loschmidt's number NL=2.687×1019 cm−3). The experimental methods consisted of observing the conductivity decay during the afterglow of a photoionized plasma, in conjunction with mass spectrometry of plasma ions and optical spectroscopy of the XeF* excimer radiation. The measured rate coefficients agree well with theoretical results by Bates and Mendaš and Monte Carlo simulations by Morgan et al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458676
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1−xAs/GaAs heterostructures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5195-5199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural and the optical properties of InAs/GaAs quantum-dot (QD) arrays inserted into undoped GaAs barriers embedded in an AlxGa1−xAs/GaAs were investigated by using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images and the selected-area electron diffraction patterns showed that vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The temperature-dependent PL spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the InAs QDs shifted to lower energy with increasing temperature. The PL intensity of the InAs dots was significantly enhanced by the modulation-doped AlxGa1−xAs/GaAs heterostructure, and the thermal activation energy of the InAs dots was decreased by the addition of the modulation-doped AlxGa1−xAs/GaAs heterostructure. The present results can help to improve the understanding of the microstructural and the optical properties in InAs QD arrays inserted into GaAs barriers embedded in a modulation-doped AlxGa1−xAs/GaAs heterostructure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459752
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  • 8
    Electronic Resource
    Electronic Resource
    High sensitivity mass spectrometer system for contaminant measurement in high purity gases (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3465-3471 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A mass spectrometer beam system using a double focusing sector analyzer and an electron impact ion source has been developed for trace analysis. The molecular beam, formed through a focusing glass capillary array, serves as the gas inlet of the system. Closed cycle cryopumps and ion pumps are used to generate the high vacuum. System roughing is achieved using sorption pumps. Clean and oil free vacuum was obtained by nonmechanical pumping. System normal mode sensitivity is about 107 counts/s/Torr. System low pressure mode sensitivity can be three orders of magnitude higher when sample pressures are below 30 mTorr. A parts-per-billion range system detection capability was accomplished. Slow response time for adsorptive species measurements is a major drawback of the sample inlet system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147160
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  • 9
    Electronic Resource
    Electronic Resource
    Cutaneous metastasis to the scalp from squamous cell carcinoma of the cervix (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Carcinoma of the cervix is a common neoplasm. Early detection and improved treatment techniques have resulted in better control of cancer and longer survival, however, invasive and metastatic disease still occur. Cervical cancer usually spreads through direct local extension and via the lymphatics, haematogenous metastasis is relatively infrequent and cutaneous metastases are very rare. Metastasis to the scalp is extremely rare and only three cases of scalp metastasis from cervical cancer have been reported in the literature. We now report a patient with cervical cancer who presented with metastasis to this very unusual site.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01128.x
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  • 10
    Electronic Resource
    Electronic Resource
    Gas filter correlation instrument for the remote sensing of gas leaks (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1812-1819 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An airborne remote sensor named GASPILS (gas pipeline leak sensor) has been developed and tested to detect leaks from natural gas pipelines by monitoring the amount of methane in the atmosphere above the leak. The sensor is a passive electro-optical system, with two independent channels, operating in a downward-looking profiling mode. It is designed to detect increases in the low levels of methane concentration by sensing the infrared spectral radiance signatures using a nondispersive gas filter correlation technique. This technique involves the use of a gas cell as a matched spectral filter, and it combines a high degree of sensitivity to the target gas with a high degree of specificity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138100
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