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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 1636-1639 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2826-2830 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A superlattice film of 5, 10, 15, 20 tetraphenylporphyrin (H2TPP; C44H30N4) and 5, 10, 15, 20 tetraphenylporphyrinato zinc (ZnTPP; C44H28N4Zn) was grown on a hydrogen terminated surface of Si (100) wafer which was kept at −25 °C. The organic molecular beam deposition technique was used for the fabrication under ultrahigh vacuum between 3×10−9 and 3×10−10 Torr. The small angle x-ray diffraction study has revealed that the period of the superlattice was 4.4 nm, which was also confirmed by the oscillation of the same period observed in a secondary ion mass spectrometry depth profile of Zn. The Fourier-transform infrared spectroscopy measurement indicated that the quasi-planar molecules of H2TPP and ZnTPP were inclined at an angle of 70° with respect to the substrate surface. The film surface was very flat and any roughness could not be detected by field emission secondary electron microscope observation. An atomic force microscope (AFM) therefore was used to investigate the surface. The root mean square roughness calculated from the AFM image was 0.37 nm.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1475-1478 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conduction of pristine (undoped) and iodine doped vacuum deposited films of the novel donors, dibenzodithiotetra-thionaphthalene and dibenzodithiotetraselenonaphthalene were measured. The electronic structures of these donor compounds were examined experimentally by ultraviolet photoelectron spectroscopy and theoretically by semiempirical MO calculations and compared with the corresponding data of tetrathiotetracene.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2669-2671 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma sputter type of negative ion source with an electron cyclotron resonance (ECR) discharge has been developed at KEK. The ECR discharge was produced by a 2.45-GHz microwave. In this ion source, negative heavy ions are produced at the surface of the metal which is placed in a Xe plasma confined by a cusp magnetic field. In preliminary experiments, the beam current of 7 mA for Cu− was obtained in pulsed mode operation.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2711-2713 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The cesium catalysis effect of H− ion production in a volume production type of H− ion source has been investigated by the authors. These investigations suggest that the beam current enhancement is caused by a surface H− ion production process at the cesium covered plasma electrode. In order to examine this process in detail, measurement of the H− ion production probability by scattering thermal hydrogen atoms from a cesium covered molybdenum surface has been made. The measured H− ion production probability agrees reasonably well with the quantum mechanical calculation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1223-1225 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma sputter type of negative and positive ion source with electron cyclotron resonance (ECR) discharge has been developed at KEK. The ECR discharge was produced by a 2.45 GHz microwave source. In this ion source, negative heavy ions are produced at the surface of the metal which is placed in a Xe gas plasma confined in a cusp magnetic field. Positive ions are generated by ionizing of sputtered neutral atoms in the ECR discharge. The microwave is introduced into the source through a sputter target using a waveguide type of microwave transformer.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 841-841 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In order to obtain a reliable cold valve (or low temperature valve) which can be tested at room temperature, several combinations of hard material for the valve stem tip and soft material for the valve seat were tested. The combination of Be-Cu and Ag gave satisfactory performance.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 372-377 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multicusp magnetic field plasma-surface ion source, normally used for H−ion-beam formation, has been modified for the generation of high-intensity, pulsed, heavy-negative-ion beams suitable for a variety of uses. A brief description of the source and basic pulsed-mode operational data (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure) are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples, along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low-discharge-power conditions suggest that sources of this type may alo be used to produce high-intensity (mA) dc beams.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3114-3116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamond powders with size less than 2 μm have been measured as a function of the particle size. The Raman line was found to become more asymmetric with some tailing towards lower Raman shifts, broader, and weaker with decreasing particle size. The observed result can be explained by a phonon confinement effect rather than by a strain effect. This work predicts that it is very difficult to detect Raman spectra of diamond particles with size less than ∼50 A(ring). A broad Raman band, whose intensity becomes stronger with decreasing particle size, was observed around 600 cm−1 in the spectra of diamond powders with particle size less than 2 μm. We hypothesize that the broad band arises from transverse acoustic phonons near the Brillouin zone boundary because of the relaxation in the wave vector selection rule.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 47-49 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of oxygen atoms into diamond can be introduced by CrO3 treatment followed by an exposure to a hydrogen plasma. From characterization using Rutherford backscattering spectrometry, it is found that the depth distribution of the doped oxygen in the diamond is homogeneous from the surface where its concentration is about 1020 atoms/cm3. The doped oxygen can form cathodoluminescence centers yielding luminescence peaks at 3.75 and 4.64 eV at room temperature. After the diffusion of oxygen atoms, damages in the diamond cannot be detected by Raman scattering spectroscopy.
    Type of Medium: Electronic Resource
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