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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 405-409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lateral overgrowth by liquid phase epitaxy of silicon over SiO2 has been investigated by x-ray double crystal topography. A large number of lamellae was free of crystallographic defects, but all of the lamellae showed growth striations. For the lamellae grown from indium solutions growth striations with indium concentration differences of about 1016–2 × 1017 cm−3 were detected. A considerable part of the indium impurities in the lamellae seemed to be electrically inactive. The tilt of the defect free lamellae against the substrate is of the order of 10−6. Some of the lamellae showed single dislocations parallel to the sample surface. These dislocations originated at the edges of the seeding windows and ended in reentrant corners at the outer edge of the lamellae. In most of the defective lamellae the dislocations formed a dense network.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2639-2645 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates limitations to the open circuit voltage of n-type amorphous silicon/p-type crystalline silicon heterojunction solar cells. The analysis of quantum efficiency and temperature dependent current/voltage characteristics identifies the dominant recombination mechanism. Depending on the electronic quality of the crystalline silicon absorber, either recombination in the neutral bulk or recombination in the space charge region prevails; recombination at the heterointerface is not relevant. Although interface recombination does not limit the open circuit voltage, recombination of photogenerated charge carriers at the heterointerface or in the amorphous silicon emitter diminishes the short circuit current of the solar cells. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 351-353 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on epitaxial lateral overgrowth of Si on oxidized (111) Si wafers by liquid phase epitaxy. The growth starts in oxide-free seeding windows and proceeds laterally over the SiO2. Growth effectively ceases when (111) sidewalls form. This observation allows the development of a geometrical model that, for the first time, explains the observed dependence of the overgrowth width on the orientation of the seeding windows. We obtain a maximum overgrowth width of 120–130 μm and a maximum aspect ratio of 40:1. Transmission electron microscopy reveals no crystallographic defects in the overgrown lamellae.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 517-519 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using electron beam lithography dry etching and an epitaxial regrowth step we have prepared buried In0.53Ga0.47As/InP quantum wires. Measurements of the quantum efficiency under different excitation energies reveal the strong impact of carrier loss processes in the barrier on the quantum efficiency of the wire structures. For epitaxially buried wires we find under resonant excitation nearly no decrease in the quantum efficiency down to a wire width of 65 nm. This gives evidence that the regrowth step strongly suppresses the nonradiative recombination at the boundaries of the active region of the wire. Furthermore the comparison of resonant and nonresonant excitation yields an improvement of the carrier capture due to epitaxial regrowth.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2996-2998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of 200 cm2/V s at a hole concentration of 1.4×1017 cm−3 in our films. A minority carrier diffusion length of 4.5 μm is determined from quantum efficiency measurements in the epitaxially grown Si films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2267-2269 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum wires with an artificially designed periodic potential have been fabricated by etching a chain of antidots along the central wire axis. The resistivity ρxx in the presence of a perpendicular magnetic field shows distinct peaks in the low magnetic field regime that can be explained by localized orbits around one antidot or between two neighboring antidots. By changing the lateral position of the antidot chain on the wire from the central axis to the wire side walls, a localized orbit in the region between four antidots has been detected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3719-3721 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon on glass substrates was grown by a method based on the creation of nucleation sites using laser crystallization of amorphous silicon followed by thermal annealing at temperatures below 600 °C. Annealing induces the crystallization of the material around the seeds, eventually leading to coalescence of adjacent domains before spontaneous nucleation sets in. Micro-Raman spectroscopy shows that the seeds experience a tensile stress, which causes a radial birefringence in the surrounding amorphous silicon, detected by optical anisotropy measurements. We conjecture that this stress facilitates the crystallization of the material around the seed upon thermal annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1399-3038
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Our aim was to study the influence of infection with the respiratory syncytial virus (RSV) in non-hospitalized infants on sensitization to aeroallergens and the early manifestation of atopy. Six hundert and nine infants from the prospective German Multicenter Cohort Study on Atopy were included, 38% of whom had an elevated atopic risk. RSV IgG and IgM antibodies were tested by ELISA with gradient purified RSV antigen. Specific IgE against mites, cat dandruff, birch and grass pollens and relevant nutritional antigens were tested with CAP-RAST-FEIA (Pharmacia, Sweden). Of the cord sera 99% were positive for RSV-IgG, 44. 7% at one year and 64. 2% (n=265) at two years of age. The positivity rate after 12 months varied with the season of birth, the number of siblings and the degree of exposure to tobacco smoke; and correlated closely with attacks of wheezing during infancy. Twenty (2. 8%) children were found to be sensitized against at least one aeroallergen at one year, and 28 (10. 5%) at two years. By the first birthday, mite sensitization (n=3) could only be seen in the RSV-infected children; grass pollen sensitization (n=9) was associated with RSV seropositivity (logistic regression model including the confounders mentioned above: with RSV IgG p=0.04 〉 and IgM p=0.0006), as was birch sensitization (n=5) with RSV IgM (p=0.009). No such differences could be detected at two years. No correlation of RSV seropositivity to any allergic manifestation could be found. We conclude, that it is only in the first year of life, that RSV infection plays a significant role in promoting sensitization against aeroallergens, which do not at this time produce allergic symptoms.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Pediatric allergy and immunology 4 (1993), S. 0 
    ISSN: 1399-3038
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In order to identify newborns at risk for atopic diseases, we developed a family questionnaire and selected specific answers which were suitable to identify atopic family members. The validity of the questionnaire was evaluated by the Phadiatop lest results of 793 mothers and 353 fathers. As both screening instruments do not measure the same, the Phadiatop test identifies scnsitization to inhalant allergens and the history reflects the clinical manifestation of atopic disease, the agreement between sensitization and manifestation is incomplete. Sensitivity and specificity of the questionnaire screening conditions to reproduce the Phadiotop lest result was 64% and 84% for mothers, and 58% and 88% for fathers, respectively. The relative risk for lifetime prevalence of atopic manifestations in Phadiatop positive over negative mothers was calculated to be 3. 88 (95% confidence interval = 3. 12 to 4. 81), and for Phadiatop positive over negative fathers to amount 4. 84 (95% confidence interval 3. 25 to 7. 23). A few relevant answers of 20 were identified by logistic regression analysis to predict the Phadiatop test result nearly, as well as the total questionnaire.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1399-3038
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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