Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 2211-2213
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In0.53Ga0.47As epitaxial layers doped with Zn and Sn were grown on InP (100) substrates by liquid-phase epitaxy with a 5 °C supersaturation temperature. The physical properties of the doped layers have been investigated. The peak energy of (D0,A0) pair band emission in Zn-doped InGaAs layers decreases with a linear slope of 0.7×10−8 eV cm as the cube root of net hole concentration is increased. In Sn-doped layers, the photoluminescent peak wavelength decreases with increasing electron concentration due to the Burstein–Moss shift and band-tailing effects. The relative peak intensity deteriorates in highly doped layers due to the formation of complex precipitates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342499
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