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  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth and characterization of CdxHg1−xTe (0.4〈x〈1) based quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1774-1781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdxHg1−xTe epilayers and CdxHg1−xTe/CdyHg1−yTe quantum well heterostructures have been grown by molecular beam epitaxy. The various parameters of the growth technique have been carefully optimized: control of the thickness by the observation of the oscillations of the reflection-high-energy electron diffraction, the alloy composition by measuring the Cd sticking coefficient in our growth procedure, and the quality of the interfaces by performing transmission electron microscopy. The photoluminescence spectra at 5 K of thick CdxHg1−xTe epilayers are dominated by bound exciton recombination below the fundamental band gap Eg. By contrast, the main emission in the quantum wells photoluminescence spectra is due to an intrinsic recombination of the confined carriers in their respective ground state. The influence of CdxHg1−xTe well thickness and the CdyHg1−yTe barrier composition of this quantum well transition energy are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351213
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  • 2
    Electronic Resource
    Electronic Resource
    Indium doping of CdTe and Cd1−xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2927-2940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe and Cd1−xZnxTe layers and microstructures were doped with indium donors during their growth at low temperatures (200–220 °C) by molecular-beam epitaxy under Cd overpressure. Uniform and planar doping of layers and local doping of quantum wells and superlattices are presented. Characterization techniques include secondary-ion mass spectroscopy (SIMS), capacitance-voltage and Hall-effect measurements, optical spectroscopy, x-ray double diffraction, and x-ray photoelectron spectroscopy. In the range of indium concentrations 2×1016–1×1018 cm−3, the donor activation efficiency is 100% for uniform doping. A low-temperature carrier mobility of up to 5300 cm2/V s is obtained. The highest measured carrier concentration is 1.3×1018 cm−3; at a higher doping level, strong compensation occurs, related to dopant migration and cadmium vacancy formation. Planar doping also yields ≈100% activation efficiency for moderate values of sheet density (≈1011 cm−2) but has the same limit of about 1018 cm−3 for total carrier concentration. High-structural-quality planar-doped quantum wells and superlattices are obtained. Good localization of dopant is demonstrated by SIMS at low sheet density but at high concentration substantial migration of indium occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351496
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  • 3
    Electronic Resource
    Electronic Resource
    Assessment of the structural quality of CdTe/Cd1−xZnxTe strained superlattices by high-resolution x-ray diffraction and photoluminescence studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6229-6233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed analysis of x-ray double-diffraction rocking-curve measurements and low-temperature photoluminescence spectroscopy of (001) CdTe-CdxZn1−xTe strained-layer superlattices grown by molecular-beam epitaxy. The presence of very sharp satellite reflections demonstrate smooth interfaces with a well-defined modulation of both composition and perpendicular stress. Using a kinematical step model, the thickness, strain, and composition of the wells and the barriers are extracted. It is shown that fluctuations of 1 monolayer of the average period can be reproducibly obtained in such superlattices, in excellent agreement with the in situ reflection of high-energy electron diffraction oscillations measurements. The structural perfection of these superlattices is confirmed by the optical spectra which exhibit sharp excitonic transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346887
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant optical microcavity based on crystalline silicon active layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2207-2209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline silicon microcavities resonant at 1.1 μm were fabricated by using submicron thick Si membranes from a silicon on insulator substrate. These membranes were composed of a single crystalline Si film layered above and below two thin silicon dioxide layers. The low temperature photoluminescence (PL) of the membranes originated from the electron–hole condensed phase, which is characteristic of ultrapure crystalline silicon. The microcavities are then formed by depositing dielectric mirrors on both sides of the membranes. Optical properties of microcavities are studied by optical transmission and PL spectroscopy. The Si PL spectrum is strongly modified by the cavity: at the resonance the PL linewidth is reduced by a factor 3 and the emission is highly angle dependent. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494841
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  • 5
    Electronic Resource
    Electronic Resource
    Low-level photomodulation of exciton absorption in CdTe single quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1196-1202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optical nonlinearity at very low light levels in a CdTe/CdZnTe single quantum well at 4 K is reported. Excitation above the band gap produces a significant decrease in the heavy-hole exciton absorption at intensities down to μW/cm2. The dependence of the change in absorption on the pump intensity is sample dependent and is strongly sublinear. At low pump intensity the recovery of the absorption after switching off the pump is exponential with a time constant of about 150 ms, which is nearly independent of pump intensity up to ∼3 mW/cm2. Above 30 μW/cm2 an additional process on a time scale ∼100 μs is observed. The rise time after turning on the pump varies inversely as pump intensity. It is shown that the nonlinearity arises from the presence of excess electrons in the CdTe quantum well, which reduce the excitonic absorption by phase-space filling. These electrons are charge compensated by holes trapped in the barrier. The time and intensity dependence of the optical nonlinearity can be fitted by a kinetic model of the trapping, in which a range of traps with different recovery times participates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360357
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  • 6
    Electronic Resource
    Electronic Resource
    Optical gain and laser emission in HgCdTe heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6908-6915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of stimulated emission mechanisms as well as laser emission capability has been carried out on Hg1−xCdxTe (0.44〈x〈0.5) separate-confinement heterostructures grown by molecular beam epitaxy. At low temperature, spontaneous photoluminescence (PL) occurs on extrinsic levels below the gap whereas optical gain exhibits a maximum of stimulated emission shifted towards higher energy, close to the gap. As temperature increases, spontaneous PL is shifted from the extrinsic states to the band-to-band transition by a thermally activated detrapping of the carriers. Above 100 K, spontaneous and stimulated emission vary in a similar way with temperature. Laser emission has been observed up to room temperature for all the heterostructures. The use of quantum wells in the active layer and graded index in the barriers has allowed a significant reduction of the excitation density threshold, as compared to a single separate-confinement heterostructure (SCH) of same composition. However, the high-temperature characteristic temperature T0 is found to be similar in the two structures. A SCH with a higher energy gap exhibits a more favorable behavior with temperature. These experimental results have been compared to theoretical models. The experimentally observed T0 can be well simulated by taking into account the Auger effect. From the experimental data, the Auger constant has been determined for each heterostructure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360457
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  • 7
    Electronic Resource
    Electronic Resource
    Nitrogen acceptors confined in CdZnTe quantum well structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2070-2073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen acceptors confined in a CdZnTe single quantum well, grown by molecular beam epitaxy, are investigated by different optical methods. The transitions related to nitrogen acceptors confined in the well are observed in the doping range between 1017 and 1018/cm3. The temperature and excitation intensity dependence of the nitrogen-related transitions in photoluminescence spectra indicates that these transitions correspond to the nitrogen acceptor bound excitons and to free electron to neutral nitrogen acceptor recombination. The binding energy of nitrogen acceptors confined in an 130-A(ring)-wide Cd0.96Zn0.04Te/Cd0.86Zn0.12Te structure is deduced to be 51.7±0.5 meV from this study. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361063
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  • 8
    Electronic Resource
    Electronic Resource
    Luminescence characterization of CdTe:In grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm−3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104797
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  • 9
    Electronic Resource
    Electronic Resource
    Electron and hole g-factors in CdTe/CdMgTe quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3704-3706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single CdTe/CdMgTe quantum well (QW) structures are investigated by stationary and time-resolved photoluminescence in the presence of an applied magnetic field. We study the dependence of the electron and the hole g factors on the well width by combining Zeeman measurements and the recently developed spin quantum beats technique. The experimental results show that both the electron and the hole g factors have the same sign in wide QWs and increase with decreasing well width. The electron spin phase relaxation time is about 250 ps in our QW structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117195
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  • 10
    Electronic Resource
    Electronic Resource
    Photopumped infrared vertical-cavity surface-emitting laser (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2480-2482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115827
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