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  • 1
    Electronic Resource
    Electronic Resource
    Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1977-1984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A zero-net strained GaInAsP/InP(001) multilayer grown by gas source molecular beam epitaxy exhibits large interfacial undulations and an orthorhombic modulated distortion, which are attributed to elastic relaxation of tensile layers. It is examined by high resolution transmission electron microscopy in order to directly determine the strain distribution in the (11¯0) plane. The interplanar spacings are found to be laterally modulated along the [110] direction within tensile and compressive layers. The interplanar spacing modulation is perfectly correlated to the interfacial morphology. Therefore, the strain is not homogeneous but concentrated along [11¯0] oriented lines. Large variations of (110) interplanar spacings up to 3.5% have been measured, while the lattice mismatch between tensile and compressive layers is only 2%. The observed strain distribution is qualitatively consistent with an elastic relaxation mechanism of the tensile layer. Different other effects are reviewed. Surface relaxation effects due to sample thinning are qualitatively discussed. It is also shown that nonplanar interfaces between tensile and compressive layers strongly account for the stress distribution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358833
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  • 2
    Electronic Resource
    Electronic Resource
    Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7881-7883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zero-net strained multilayer alternating tensile GaInP and compressive InAsP have been grown on (001)InP by metal-organic vapor-phase epitaxy. A structural analysis using transmission electron microscopy (TEM) is reported. A remarkably regular laterally modulated structure has been observed. GaInP- and InAsP-rich vertical zones alternate with a periodicity of 0.28 μm along the lateral [110] direction, thus balancing the mismatch along the [110] rather than the [001] growth direction. TEM experiments suggest that each vertical zone is partially elastically relaxed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356573
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  • 3
    Electronic Resource
    Electronic Resource
    Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the strained-induced 2D–3D transition, InAs dots have been grown on InP(001) and examined by transmission electron microscopy. Two different modes of island size and spatial distribution have been identified. For deposit of 1.5 and 1.8 monolayers, the islands are about 7 nm high and randomly distributed. Above 2 monolayers, they are about five times smaller in volume and locally self-organized, with a typical distance of 40 nm independent of the island density. It is suggested that the strong dependence of the island size on the total amount of deposited InAs is mainly due to long range interactions through the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114353
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3778-3782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compressive GaInAsP multiple quantum wells (MQW) grown by gas source molecular-beam epitaxy present altered structural and optical characteristics when tensile GaInAsP barriers are used instead of lattice-matched ones. An alternate tensile/compressive GaInAsP MQW has been examined by transmission electron microscopy. A strong lateral modulation of thickness, strain, and probably chemical composition was shown. This modulation exhibits pronounced anisotropy, with a periodicity of about 50 nm along the [110] direction. Although its origin is not fully accounted for yet, it seems to allow partial elastic relaxation of tensile layers. Based on this analysis, a schematic description of distortion modulation is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354469
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  • 5
    Electronic Resource
    Electronic Resource
    Assessment of the structural quality of CdTe/Cd1−xZnxTe strained superlattices by high-resolution x-ray diffraction and photoluminescence studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6229-6233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed analysis of x-ray double-diffraction rocking-curve measurements and low-temperature photoluminescence spectroscopy of (001) CdTe-CdxZn1−xTe strained-layer superlattices grown by molecular-beam epitaxy. The presence of very sharp satellite reflections demonstrate smooth interfaces with a well-defined modulation of both composition and perpendicular stress. Using a kinematical step model, the thickness, strain, and composition of the wells and the barriers are extracted. It is shown that fluctuations of 1 monolayer of the average period can be reproducibly obtained in such superlattices, in excellent agreement with the in situ reflection of high-energy electron diffraction oscillations measurements. The structural perfection of these superlattices is confirmed by the optical spectra which exhibit sharp excitonic transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346887
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  • 6
    Electronic Resource
    Electronic Resource
    Structure of (111) CdTe epilayers on misoriented (001) GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2428-2433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results concerning [111]CdTe growth on misoriented (001) GaAs substrates are presented and discussed. Growing CdTe on GaAs substrates with Ga steps results in twin-free layers, which is not the case for As steps. The tilt of the (111) CdTe planes with respect to the (001) GaAs planes is reported versus the GaAs substrate misorientation. We propose a model that establishes a correspondence between the measured tilt and the presence of interface dislocations as observed by high-resolution electron microscopy. This model also takes into account the effects of the surface morphology on the suppression of twins.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345512
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  • 7
    Electronic Resource
    Electronic Resource
    Growth control of CdTe/CdZnTe (001) strained-layer superlattices by reflection high-energy electron diffraction oscillations (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2733-2735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used reflection high-energy electron diffraction (RHEED) and x-ray diffraction to study the growth of CdTe/Cd0.90 Zn0.10 Te (001) heterostructures by molecular beam epitaxy (MBE). A growth process involving an excess of Cd and growth interruptions at the well-barrier interfaces has been found necessary to observe strong and persistent RHEED oscillations during the epitaxy of quantum wells and superlattices. This method gives accurate in situ thickness measurements of all the layers during the growth of CdTe/Cd0.90 Zn0.10 Te superlattices, in good agreement with x-ray diffraction data. The sharpness of x-ray diffraction satellites confirms the high crystalline quality of the superlattices with a period fluctuation of less than one monolayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101938
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1680-1682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained Ga0.2In0.8As and InAs islands were grown on a InP(113)B substrate by gas source molecular beam epitaxy and examined by transmission electron microscopy and atomic force microscopy. The islands are mainly bounded by the low-index facets {001}, {111}B, and {110} [inclination with respect to the (113)B surface of 25°, 29°, and 31°, respectively]. Some of the consequences of the substrate orientation on the island shape and formation are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123653
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  • 9
    Electronic Resource
    Electronic Resource
    Elastic energy of strained islands: Contribution of the substrate as a function of the island aspect ratio and inter-island distance (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2984-2986 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The finite element method is applied to strain-induced islands. The distribution of the elastic energy in the island and the substrate is determined as a function of the island aspect ratio and inter-island distance. When the height-over-base ratio increases, the total elastic energy density decreases and the relative contribution of the substrate increases. When the inter-island distance decreases, the elastic energy density increases and the relative contribution of the substrate decreases. The influence of the aspect ratio on the relaxation rate is amplified for short inter-island distances. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121515
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  • 10
    Electronic Resource
    Electronic Resource
    Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 943-945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to investigate strained InAs islands grown on InP(001), in correlation with transmission electron microscopy. Symmetry arguments, selective resonance at the InAs E1-like transition and comparison with a single-quantum-well structure allowed to distinguish between the islands and remaining wetting layer signals. Whereas the vibrational modes of the 2D thin layers are greatly affected by interface roughness and confinement, strain effects mainly account for the phonon frequency shifts in the islands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116951
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