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Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy (1993)

Ponchet, A. ; Rocher, A. ; Emery, J.-Y. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 3778-3782

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Compressive GaInAsP multiple quantum wells (MQW) grown by gas source molecular-beam epitaxy present altered structural and optical characteristics when tensile GaInAsP barriers are used instead of lattice-matched ones. An alternate tensile/compressive GaInAsP MQW has been examined by transmission electron microscopy. A strong lateral modulation of thickness, strain, and probably chemical composition was shown. This modulation exhibits pronounced anisotropy, with a periodicity of about 50 nm along the [110] direction. Although its origin is not fully accounted for yet, it seems to allow partial elastic relaxation of tensile layers. Based on this analysis, a schematic description of distortion modulation is proposed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.354469

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