Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 2618-2620
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the dopant behavior of 1.5 MeV implanted Sb in Si(100) both prior to and following irradiation with 8 MeV C+ ions. The irradiation stimulates the regrowth in silicon lattice and induces a high Sb substitution of 93% after a thermal anneal of 400 °C. At higher temperatures, a significant Sb diffusion towards the amorphous/crystalline interface is detected in the ion-irradiated sample. It is suggested that the vacancy supersaturation produced during ion irradiation is dominantly responsible for the significant modification of dopant substitution, redistribution, and diffusion. Point defects created during precipitation also seem to influence the dopant diffusion. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1389485
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