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  • 1
    Digitale Medien
    Digitale Medien
    Transient light absorption in polydiacetylene films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1779-1782 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The sign of the transient transmission in PDA 4BCMU film (polydiacetylene 4-butoxycarbonalmethylurethane) was experimentally investigated as a function of excitation wavelength and intensity. The observed decrease in the transient transmission (ΔT〈0) from 2.05 eV (605 nm)〈ωex〈2.16 eV (574 nm) is attributed to triplet absorption. The triplet is created by a two-photon absorption process followed by a fast fission process. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363026
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  • 2
    Digitale Medien
    Digitale Medien
    Femtosecond photoinduced dichroism in polydiacetylene 4bcmu film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4288-4290 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Femtosecond pulses were used to study the photoexcitation dynamics and transient photoinduced dichroism in polydiacetylene 4BCMU film. Ultrafast photoinduced dichroism and optical Kerr gate response were observed. These measurements allowed estimation of the diffusion constant (D∼0.1 cm2/s), nonlinear index of refraction (n2∼10−8 esu), and third-order susceptibility (Δχ(3)∼6 × 10−10 esu), in the film. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360702
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  • 3
    Digitale Medien
    Digitale Medien
    Coevaporation and ion implantation of Pd50Ti50 and Pt50Ti50 on AISI stainless steels for reducing wear and friction (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 300-304 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pd50Ti50 and Pt50Ti50 alloy films were deposited on stainless-steel substrates and irradiated with ion beams. The samples were tested on pin-on-disk wear equipment and analyzed by Rutherford backscattering spectrometry and scanning and transmission electron microscopy. Adding Pd50Ti50 and Pt50Ti50 as a surface layer to stainless steel resulted in reduced wear and friction. Xe implantation slightly improved tribomechanical properties, while N implantation led to a dramatic reduction in wear and friction. The improvement was thought to be associated with nitride precipitation hardening and/or forming lubricious oxides during sliding. The as-deposited films exhibited amorphous structures and transformed to equilibrium compounds upon annealing. Sliding tests on amorphous and crystalline films did not show a significant difference in friction and wear behavior.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342540
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  • 4
    Digitale Medien
    Digitale Medien
    Magnetic and structural properties of MMNi4.15Fe0.85 and its hydride (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3620-3620 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Mischmetal (MM) has been considered as a possible substitute for the rare-earth component in both permanent magnets1,2 and hydrogen storage intermetallics. We have investigated the magnetic and structural properties of a mischmetal-nickel-iron intermetallic and its hydride using magnetization, Mössbauer, x-ray diffraction, and SEM measurements. Magnetic susceptibility measurements were made between room and liquid-nitrogen temperatures. There was a change in the magnetic character of the unhydrided sample at 140 K. Hydriding produced a large increase in the susceptibility with a corresponding change in the magnetization at low temperatures. The 57Fe Mössbauer spectra of the intermetallic yielded a doublet at room temperature and demonstrated a change in magnetic behavior similar to the magnetization results at low temperatures. Experimental data were used to interpret the hydrogen absorption mechanism acting in this intermetallic and the results are discussed with respect to previously proposed models for rare earth-transition metal compounds.3,4
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340715
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  • 5
    Digitale Medien
    Digitale Medien
    Effects of krypton on CrSi2 formation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1998-2001 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence and redistribution of the inert gas Kr in chromium silicide formation have been investigated by MeV He backscattering spectrometry and transmission electron microscopy. It was found that krypton implanted in the chromium film remains stationary with respect to the chromium during silicide formation, but krypton implanted in the silicon substrate accumulate at the silicon/silicide interface. The effect of krypton on the rate of silicide formation is much more pronounced when the krypton is in the chromium rather than in the silicon substrate. The thermal growth of CrSi2 is linear with time in a krypton-free sample, but becomes parabolic when the krypton is incorporated in the silicide at a concentration of 1 at. %. The activation energy associated with Si diffusion through CrSi2 is increased from 1.4±0.1 eV to 2.6±0.1 eV by the presence of krypton in the silicide. The results are interpreted as being due to segregation of krypton on grain boundaries in CrSi2 and subsequent retardation of diffusion along the boundaries.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336379
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  • 6
    Digitale Medien
    Digitale Medien
    The structure of Ni5Si2 formed in Ni-Si thin-film lateral diffusion couples (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1189-1194 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The microstructure of the nickel silicide, Ni5Si2, which forms during solid-state reactions using self-supporting Ni-Si lateral-diffusion couples, has been studied using high-resolution electron microscopy (HREM) and selected-area electron diffraction. Two different structures for Ni5Si2 have been identified, one of which is consistent with the crystal structure which has been reported to have an actual composition of Ni31Si12. There is evidence for the existence of a third structure. Variations in the distribution of these structures and the presence of planar defects may account for the reported composition range of Ni5Si2 in the Ni-Si phase diagram. The observed HREM images are compared with computer simulated images.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339830
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  • 7
    Digitale Medien
    Digitale Medien
    TiSi2/polycrystalline silicon: Arsenic distribution and Si grain growth (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4426-4432 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The diffusion behavior of arsenic in polycrystalline silicon (poly-Si) and the grain growth of arsenic-doped poly-Si with a TiSi2 overlying layer were investigated by MeV 4He2+ backscattering techniques and transmission electron microscopy. Fine-grain (30–40 nm) poly-Si was implanted with 1 or 3×1016 arsenic ions/cm2 and annealed in two stages: (1) at 885 or 985 °C in an oxygen atmosphere to distribute (homogenize) the arsenic throughout the poly-Si layer and (2) at 750 °C in a vacuum ambient with deposited Ti or TiSi2 overlay to determine the out-diffusion of arsenic. After a 750 °C anneal for 8 h, there was essentially no arsenic redistribution in the sample homogenized at 985 °C, but a loss of 40% arsenic was observed in the sample homogenized at 885 °C. The Si grains in the 280-nm-thick poly-Si layer grew in size during homogenization, up to 400 nm at 985 °C and 150 nm at 885 °C. No grain growth was observed after a 750 °C, 8-h anneal of doped poly-Si films in contact with Ti.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339080
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  • 8
    Digitale Medien
    Digitale Medien
    Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H–SiC Schottky contacts (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3701-3707 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Analytic calculations of electron transport across a Schottky barrier in 6H–silicon carbide are presented. The treatment includes the effect of barrier height fluctuations and image charge lowering on both the thermionic emission and electron tunneling processes. The results show that barrier height inhomogeneities are very important, and can lead to reverse current densities that are orders of magnitude higher than obtained from a simple theory. Formation of detrimental filamentary currents are predicted. The results are in very good agreement with published experimental data at 300 K. Finally, under forward biasing conditions, the analytical theory yields ideality factors of 1.037 in close agreement with measurements. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.369735
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  • 9
    Digitale Medien
    Digitale Medien
    Redistribution of dopant arsenic during silicide formation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1505-1514 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study of arsenic redistribution in Ni, Cr, Ta silicide forming systems has been performed by implanting arsenic into metal layers or into single-crystal silicon substrates. During silicide formation arsenic accumulates near the interface region, incorporates in the silicide, or diffuses out of the silicide into the surrounding ambient. Differences in the dopant redistribution are related to the arsenic initial location relative to the moving species in silicide formation and the diffusivity of dopant atoms at the metal-silicon reaction temperature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336084
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  • 10
    Digitale Medien
    Digitale Medien
    Dislocation defect based model analysis for the pre-breakdown reverse characteristics of 4H–SiC p+n diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7935-7938 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model analysis of the reverse characteristics of 4H–silicon carbide diodes in the pre-breakdown regime is carried out to probe the physics and qualitative trends arising from the presence of dislocations and traps in the material. Results compare favorably with recent data. The response is shown to be controlled primarily by the impact ionization process. With dislocation defects, significant increases in the device current, a softer threshold and lower hold-off capabilities are predicted in keeping with measurements. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370611
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