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  • 1
    ISSN: 1617-4623
    Keywords: Basic/leucine zipper protein ; HBP-1a(17) gene ; TransgenicArabidopsis ; Gene expression ; β-Glucuronidase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Wheat basic/leucine zipper protein HBP-1a(17) binds in vitro specifically to ACGT motif-containing cis-acting elements, such as the type I element of plant histone promoters and the G-box of hormone- and light-inducible promoters. To address the in vivo function of HBP-1a(17), we isolated and structurally analyzed theHBP-1a(17) gene and examined its expression in transgenicArabidopsis plants. TheHBP-1a(17) gene is composed of 14 exons; the basic region and leucine zipper are encoded by separate small exons, as is the case for other bZIP protein genes. The G-box of theHBP-1a(17) promoter bound specifically to HBP-1a(17) and its related HBP-1a isoforms, suggesting that theHBP-1a(17) gene may be autoregulated, although the binding affinity of these proteins in vitro is very low. InArabidopsis plants, activation of theHBP-1a(17) promoter was highly restricted to photosynthetically active mesophyll, and guard cells and vascular bundles of vegetative leaves. Etiolation of transgenic plants resulted in inhibition of expression of theHBP-1a(17) promoter. Indeed, theHBP-1a(17) promoter contains several sequence elements homologous to cis-acting elements conserved in light-inducible promoters. It is, therefore, assumed that theHBP-1a(17) gene is light regulated and that HBP-1a(17) is involved in light-responsive gene transcription via the G-box.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 3704-3710 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3804-3807 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe the formation of an ordered structure in Si1−xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x-ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By careful x-ray diffraction analysis, we find that the degree of order is not equivalent in variants. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5507-5509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic measurements at various temperatures have been performed for loose powder and field-oriented samples of Gd1−xDyxCo4B with x=0, 0.05, and 0.1. The temperature dependences of spontaneous magnetization in these compounds are determined. It is found that a spin reorientation occurs at around T=162 K for Gd0.95Dy0.05Co4B and at around 225 K for Gd0.9Dy0.1Co4B. The temperature dependences of magnetic anisotropy constants, K1(Gd1−xDyxCo4B), of Gd1−xDyxCo4B with x=0 and 0.1 are determined. The anomalous temperature dependence of K1 (GdCo4B) is well explained by taking account of the Gd sublattice magnetic anisotropy due to the dipole–dipole interaction and the Co sublattice magnetic anisotropy similar to that in YCo4B. The temperature dependence of the Dy sublattice magnetic anisotropy constant, K1(Dy), has also been determined by making use of K1(GdCo4B) and K1(Gd0.9Dy0.1Co4B). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6283-6285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction and magnetization measurements have been performed for powdered and field-oriented samples of Gd1−xDyxCo4B with x=0, 0.05, 0.1, and 0.2. It has been found that Gd1−xDyxCo4B with x=0.2 has a planar magnetic anisotropy in the temperature region below room temperature; however, the samples with x=0.05 and x=0.1 have an axial magnetic anisotropy at room temperature and transform to a tilted state in the low-temperature region. By analyzing magnetization curves measured in a pulsed field up to 140 kOe at T=4 K and also in a static field up to 12 kOe at 78 K for the field-oriented samples with x=0.05 and x=0.1, approximate values of magnetic anisotropy constants of a Dy ion in Gd1−xDyxCo4B, K1(Dy) and K2(Dy), have been determined to be −2.1×10−14 erg/Dy and 1.3×10−14 erg/Dy, respectively. By comparing these values with those of DyCo5.2, it is found that K2(Dy) in the CeCo4B-type structure is enhanced in one order by the crystallographic change from the CaCu5- to the CeCo4B-type structure.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 1 (1968), S. 126-133 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1045-1050 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computer simulation method to study a laser-induced transient temperature profile of a multilayered phase-change optical recording disk (PCORD) has been developed. The simulation program consists of two parts. One part is an optical analysis program based on the optical characteristic matrix method, and the other is a thermal analysis program based on the finite-element method. A new estimation method for thermal conductivity of recording films was proposed. The estimated thermal conductivity of the thin-film recording media was found to be 50% lower than that of the bulk. Reflectivity, absorbance, and temperature values obtained with this simulation method were compared with those measured by a spectrophotometer and an infrared radiation thermometer when the samples were irradiated in an Ar+ laser beam. The accuracy using this simulator was within 8% for reflectivity and absorbance and within 10% for temperature. A method of optimizing the laser-absorbing layer was studied. With this method simulations showed that the PCORD had a maximum contrast ratio and minimum recording time when thickness, thermal conductivity, and complex refractive index of the laser-absorbing film were 60 nm, 4.2×10−3 W/cm °C, and 2.6−i⋅0.0, respectively. This simulation could provide better film designs for PCORDs and the other optical disks of heat mode recording.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1158-1165 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of polar direction of GaN film on growth conditions has been investigated by changing either the group-V/group-III ratio (V/III ratio) in supplying the source gas or the deposition rate. GaN films were deposited on a nitrided sapphire by two-step metalorganic chemical vapor deposition. The surface morphology changed from flat hexagonal to pyramidal hexagonal facet with the increase of V/III ratio. However, the polar direction of GaN on an optimized buffer layer of 20 nm thickness was N-face (−c) polarity, independent of both the V/III ratio and the deposition rate. The polarity of the GaN epitaxtial layer can be determined by that of an interface (nitrided sapphire, annealed buffer layer or GaN substrate) at the deposition of GaN epitaxial layer. The higher V/III ratio enhanced the nucleation density, and reduced the size of hexagonal facets. The nuclei, forming the favorable hexagonal facets of wurtzite GaN, should grow laterally along the {101¯0} directions to cover a room among the facets until coalescence. After coalescence, −c GaN growth on a flat hexagonal facet results in a pyramidal hexagonal facet. The growth mode for −c GaN has been discussed with respect to surface structure and migration length of adsorbing precursors, in comparison with Ga-face (+c) GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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