Library

X
Language
Preferred search index
Number of Hits per Page
Default Sort Criterion
Default Sort Ordering
Size of Search History
Default Email Address
Default Export Format
Default Export Encoding
Facet list arrangement
Maximum number of values per filter
Auto Completion
Feed Format
Maximum Number of Items per Feed
Permalink If you want to be able to use settings permanently, you must save your settings and then set a Bookmark to the permalink
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (57)
  • 1
    Electronic Resource
    Electronic Resource
    Reply to "Comment on ‘A theory on the x-ray sensitivity of a silicon surface-barrier detector including a thermal charge-diffusion effect' '' [J. Appl. Phys. 72, 3363 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1463-1464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal-diffusion charge on the x-ray energy response of silicon surface-barrier (SSB) detectors have generally been ignored; consequently, the SSB response has been believed to be analyzed using the thickness of the depletion layer alone. Our new theory on the SSB x-ray response [J. Appl. Phys. 72, 3363 (1992)] was prepared for addressing recent confusion on plasma x-ray analyses using SSB detectors [Rev. Sci. Instrum. 59, 1380 (1988); 61, 693 (1990); 63, 4850 (1992)]. This approach was made under the assumption of a dominant contribution of the diffusion-charge signal in the vicinity of the x-ray incident location because of the strong reduction of the x-ray produced charge within the thermal-diffusion length. In this report, the comparison between this approximation (having an approximated solution) and the exact numerical calculation (using an integral form) is carried out. Necessity and importance of such three-dimensional treatments for the data analyses as well as the design of multichannel semiconductor-array detectors developed for plasma x-ray tomography diagnostics are highlighted. Furthermore, for the total diffusing-charge amount, the calculated results from our theory and the values using the comment from Donolato agree well within the accuracy of 1%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354864
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A theory on the x-ray sensitivity of a silicon surface-barrier detector including a thermal charge-diffusion effect (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3363-3373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical method based on a new theoretical model for the x-ray energy responses of silicon surface-barrier (SSB) detectors has been proposed. This method may address a recent confusing issue in the x-ray detection characteristics of SSB semiconductor detectors; that is, the x-ray responses of SSB detectors as well as p-i-n diodes used in underbiased operations were recently found to be contrary to the commonly held belief that the x-ray sensitivity of an SSB detector is determined by the thickness of the depletion layer. The model presented includes a signal contribution from thermally diffusing charge that is created in the field-free substrate region within a diffusion length from the depletion layer along with a signal contribution from charge created in the depletion layer. This model predicts a large signal contribution from the charge-diffusion effect on the SSB responses to high-energy x rays. Formulas and calculated results supporting SSB calibration data have been represented. These analytical methods might be developed to apply the analyses and predictions of energy responses of various types of silicon detectors including p-i-n diodes as well as charge-coupled devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351458
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    High-density plasma production with potential confinement in the GAMMA 10 tandem mirror : The 42nd annual meeting of the division of plasma physics of the American Physical Society and the 10th international congress on plasma physics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2066-2070 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The improvement of potential confinement was attained in the GAMMA 10 tandem mirror [Phys. Rev. Lett. 55, 939 (1985); Proceedings of the 13th International Conference on Plasma Physics and Controlled Nuclear Fusion Research, Washington, 1990 (International Atomic Energy Agency, Vienna, 1991), Vol. 2, p. 539] by axisymmetrization of heating systems for the plasma production, heating, and potential formation. A significant increase of the density and diamagnetism by the potential confinement was observed. In the previous experiment, it was difficult to increase the central cell density higher than 2.7×1018 m−3. One of the possible mechanisms is the density clamping due to the eigenmode formation of the ion–cyclotron-range of frequency (ICRF) waves in the axial direction. With high harmonic ICRF waves (RF3), the experiments to overcome this problem have been performed. In preliminary experiments with RF3 and NBI the maximum density of 4×1018 m−3 was attained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350962
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam from a gas-filled diode (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 1514-1521 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam (300 kV, ∼2 kA, 10–50 ns) have been experimentally investigated under various gas pressures. Pressures of filling gas (air) in this experiment ranged from 10 mTorr to 100 mTorr. The net currents of the beam-induced plasma channel were measured by four Rogowski coils located along the propagating region, while the electron beam currents were measured by a Faraday cup. The inductive plasma currents observed at the above pressure regimes have been characterized by magnetic decay time. Plasma-channel conductivity and ion density induced by the beam are measured along the propagating axial positions under various gas pressures. The numerical result of the ion density is also obtained at the charge neutralization time when the ion density is just the same as the electron beam density, and the digitizing experimental data of the beam current Ib(t) and voltage Vd(t) have been used. As expected, in both numerical and experimental results the ion density increases to a peak value of about 3.0×1011 cm−3 and 3.3×1011 cm−3, respectively, at 50 mTorr and slowly decreases for both cases as the gas pressure increases from 50 mTorr to 100 mTorr. Moreover, the results of ion density predicted by the theoretical model developed here are also found to be in remarkably good agreement with experimental and numerical results at pressure regimes from 10 mTorr to 100 mTorr. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872824
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Detection of fusion neutrons from a deuterium-proton mixed plasma in the GAMMA 10 Tandem Mirror (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 578-583 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diagnostics are applied to a deuterium plasma mixed with protons in the central cell of the GAMMA 10 tandem mirror [Inutake et al., Phys. Rev. Lett. 55, 939 (1985)]. The deuterium ions are heated with a slow ion cyclotron wave tuned to the fundamental deuterium resonance near the mid-plane of the central cell while the plasma is sustained with the fundamental resonance heating of protons in the minimum-B anchor cells. The measurement is based on in situ calibration to determine the transmission efficiency through machine walls and the counting efficiency of the detection system for neutrons emitted from 252Cf with energy close to that in the deuterium–deuterium (D–D) fusion reaction. The observation shows that the count rate of neutrons increases with diamagnetism, and this relation is accounted for in terms of fusion reaction between deuterium ions with a transverse temperature exceeding 10 keV. Discrepancies among ion temperatures determined with different diagnostics are mostly attributed to insufficient knowledge of the profiles of plasma parameters. The results indicate that the neutron measurement can be added as a powerful diagnostic tool for hot ions if combined with more detailed profile measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871885
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Thickness dependence of the crystallization of Ba-ferrite films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1958-1964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of Ba-ferrite/sapphire(001) films of various thicknesses has been studied using synchrotron x-ray scattering, field emission scanning electron microscope, and atomic force microscope. In films thinner than 1000 Å, Ba-ferrite amorphous precursor was crystallized into perpendicular grains keeping the magnetically easy c-axis normal to the film plane during annealing to 750 °C. In films thicker than 1000 Å, however, acicular grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular grains. The behavior of the saturation magnetization and the intrinsic coercivity was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the epitaxial, c-axis oriented perpendicular grains near the film/substrate interfacial area. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370993
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characterization of a semiconductor detector and its application for ion diagnostics using a novel ion energy spectrometer : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 857-860 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Semiconductor ion detectors are developed and characterized for the purpose of the use for high-output and wide-energy-sensitive upgraded ion diagnostics. In particular, the theoretical basis for the simulation of the semiconductor ion-energy response along with its experimental verification using monoenergetic ion beams is investigated. High-output-current semiconductor signals ranging from one to three orders of magnitude larger than those from widely employed commercially available silicon-surface-barrier detectors are attained in the ion-energy region above 0.2 keV. These data are found to be well fitted by the developed simulation results. In order to observe ion signals alone under the complicated condition of the simultaneous incidence of ions, electrons, and x rays, we develop an upgraded electrostatic ion-energy spectrometer, having specific structures with obliquely positioned multiple grids. The combination of the installation of such a low-ion-energy-sensitive semiconductor detector and this novel-structured ion spectrometer provides a new electrostatic large-output and low-energy-sensitive ion spectrometer having no signal disturbances from the other plasma species and giving no perturbations to ambient plasma-confining magnetic fields. Accordingly, this novel compact-sized electrostatic ion spectrometer using a single-channel semiconductor collector provides temporal-evolution data on ion-energy spectra during a single plasma shot alone; therefore, this spectrometer is usefully applicable to the opportunities of the observations of ion parameters in both divertor and hot-core regions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149279
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 324-327 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147923
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Characterization of new semiconductor detectors for x-ray tomography in the ASDEX Upgrade Tokamak and its generalized physics interpretations : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 774-777 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The energy response of a new semiconductor detector in the ASDEX Upgrade Tokamak for plasma x-ray tomography studies is characterized using synchrotron radiation from a 2.5 GeV positron storage ring at the National Institute for High Energy Physics in Japan. This international collaborating research clarifies a fairly good agreement between the x-ray energy response data and our recently proposed theoretical predictions for such a semiconductor x-ray-detector response. The x-ray response for several positions on the active area of the detector unit is studied; a good uniformity observed guarantees that the detector can employ any sized and shaped collimator for the x-ray tomography regardless of any correction factor coming from the response nonuniformity on the detector active area. Operational conditions of the detector for the ASDEX Upgrade plasma diagnostics are optimized using its capacitance measurements as a function of an applied bias as well as the numerical evaluations of the detector response; these are also directly verified by the synchrotron-radiation experiments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147913
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy for plasma x-ray measurements : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 565-567 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new x-ray spectrometer using the principle of a photoelectron spectroscopy method is developed for the purpose of the observations of plasma-electron temperatures in the range of a hundred of eV. X-ray photoelectron spectroscopy is a widely utilized method for surface-physics analyses; here, we employ a parallel-plate energy analyzer. This new type spectrometer is calibrated using synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory (KEK). Theoretical calculations for photoelectron spectra from plasmas with various electron temperatures are carried out using the calibration data. This spectrometer is set up at the central cell of the GAMMA 10 tandem mirror for the measurements of potential-confined electron temperatures. Experimentally observed spectra are compared with the calculated spectra as well as the data from the other x-ray detection method. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146286
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...