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  • Electronic Resource  (64)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 574-576 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of Bi2Sr2Ca2Cu3Ox (BSCCO 2223) films has been realized on (001)MgO with a cylindrical sputtering gun. The 2223 films with the c axis perpendicular to (001)MgO exhibit three types of in-plane epitaxial relations, i.e., [100]BSCCO(parallel)〈100〉MgO, [100]BSCCO(parallel)〈150〉MgO, and [100]BSCCO(parallel)〈110〉MgO. Individual domains possess respective in-plane mosaic distributions, which manifest that different epitaxial growth modes take place. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1792-1794 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium-stabilized zirconia substrates using x-ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a minimum yield value of 10% in the channeling experiment. The lattice matching required for epitaxial growth is achieved by azimuthal adjustment of the film plane with respect to the substrate. The superior growth is reflected in the film properties like the critical current density yielding values of 2×106 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2367-2369 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin films of YBa2Cu3O7−x with thicknesses down to 2 nm were grown on(100)SrTiO3 and (100)MgO by inverted cylindrical magnetron sputtering. Metallic behavior and zero resistance temperatures above 4.2 K were obtained in 3-nm-thick films on SrTiO3. Thinner films revealed temperature-activated conductivity and only partial transitions to superconductivity due to inhomogeneities in the film morphology. On MgO, the critical film thickness leading to deteriorations of the transport properties was 6 nm. An analysis of the fluctuation-enhanced conductivity near Tc in terms of the Aslamazov–Larkin theory [Phys. Lett. A 26, 238 (1968)] revealed three-dimensional behavior even in the thinnest fully superconducting films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 973-975 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin YBaCuO films have been deposited on ZrO2(Y) and SrTiO3 substrates by a novel ablation method, using a pulsed intense electron beam generated by a pseudospark source. Films with zero resistance around 85 K were grown at substrate temperatures of 820 °C with high reproducibility. X-ray analysis indicates highly textured growth on both substrates. Jc values were 6×106 A/cm2 at 4.2 K and 1.1×105 A/cm2 at 77 K. Because of the high simplicity of the deposition system and the variety of changeable parameters it represents an interesting alternative to existing laser ablation methods.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1098-1100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin superconducting films of YBa2 Cu3 O7 have been prepared by magnetron sputtering from targets of sintered material in an oxygen-argon atmosphere. The compositional and structural properties were studied by Rutherford backscattering and x-ray diffraction. The films were deposited at substrate temperatures between 580 and 800 °C. It was found that the material grows in the oxygen deficient tetragonal phase. In situ heat treatment at 430 °C in pure O2 atmosphere generates the orthorhombic structure and the films on sapphire and SrTiO3 coated sapphire substrates show the full superconducting transition at 83 K.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 310-312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth features of YBa2Cu3O7−x thin films on (100) MgO substrates were studied by He ion channeling and x-ray diffraction measurements. A minimum yield value of 7% at 2 MeV He ion energy and a standard deviation of the crystallite misorientation of only 0.1° show that epitaxial growth (c-axis oriented) is achieved despite a large lattice mismatch of about 9% between the film and the substrate. Detailed studies of the energy dependence of the dechanneling yield at the film-substrate interface for films of different thickness reveal the presence of dislocations probably formed by strain relief in the initial state of growth. Stacking faults appear as the main defect structure in the bulk of the films.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3215-3217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural analyses and investigations of flux penetration of typically melt-textured YBa2Cu3O7−δ samples were performed. This allows regions of suppressed critical current density to be directly related to microstructural defects. At small-angle grain boundaries the critical current density was found to be reduced by a factor of up to 20. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2403-2405 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2Sr2Can−1CunOx thin films have been prepared in situ on MgO(100) by dc-sputtering employing a single cylindrical target. The thin films are of almost pure Bi2Sr2Ca2Cu3Ox (2223) or intergrowth phases known as random stacking-fault structures of two phases having adjacent n. Deviations from the sputtering conditions for the 2223 growth induce the phase intergrowth of 2212, 2223, and 2234. The phase intergrowth occurs in connection with film compositions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 661-663 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C-axis oriented YBa2Cu3O7−x (YBCO) thin films were deposited on polycrystalline metallic tapes buffered with yttria stabilized zirconia (YSZ). The in-plane alignment of the YSZ layers achieved by simultaneous ion bombardment of the growing film (ion beam assisted deposition) and of the postdeposited YBCO thin films was studied by x-ray diffraction as a function of the buffer layer thickness. A significant improvement of the in-plane texture, achieved for buffer layers exceeding a thickness of about 1.5 μm, resulted in high critical current densities above 106 A/cm2 of the YBCO films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4165-4167 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microwave surface resistance (Rs) of YBa2Cu3O7−x (YBCO) films sputtered simultaneously on both sides of CeO2 coated sapphire wafers of 3 in. diameter was measured using the disk resonator technique at a frequency of 1.92 GHz. By deposition of Au layers of various thicknesses on the unpatterned YBCO side of the disk resonator, we studied the effective Rs of the Au-contacted YBCO films. Although the Au layer was not directly exposed to the microwave power, it dramatically increased the effective Rs of the YBCO film. For example, Rs(77 K)=16.5 μΩ of a 300-nm-thick YBCO film increased to 85 μΩ by the deposition of a 0.1-μm-thick Au layer. The increase of the Au thickness to 1.2 μm resulted in a further enhancement of the effective Rs up to 560 μΩ. We explain this effect in terms of the impedance transformation model. According to this model the effective Rs of the Au/YBCO bilayer decreases with increasing YBCO film thickness. However, Au layers with thicknesses above 1 μm considerably enhance the effective Rs even for thick YBCO films (700–800 nm). A higher quality of the YBCO films (in terms of shorter London penetration depths) reduces the effect of a Au layer, while a low electrical resistivity of this layer leads to a further increase of the effective Rs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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