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  • 1995-1999  (6)
Datenquelle
Materialart
Erscheinungszeitraum
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Solar cell efficiency and carrier multiplication in Si1−xGex alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4213-4221 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Crystalline Si1−xGex compounds offer the possibility for tuning the electronic energy band structure with the chemical composition of the alloy in order to adapt the material for devices utilizing the energy of solar photons at an optimum. We concentrate on the efficiency enhancement due to carrier multiplication by impact ionization. We calculate the internal quantum efficiency and the possible solar cell efficiency for this material system. The number of impact-generated charge carriers is obtained by a simulation of the competing carrier–carrier and carrier–photon scattering processes. These calculations show that the wave vector dependence of the scattering processes is unimportant for good agreement between theoretical and experimental quantum efficiencies in Si and Ge. Finally, we calculate solar cell efficiencies under the ideal assumption of unity collection efficiency and radiative recombination only. Impact ionization enhances the theoretical conversion efficiency by 0.5 percentage point; this improvement is curtailed by the strong phonon emission probability of hot carriers. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.367177
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Injection and Collection Diffusion Lengths of Polycrystalline Thin-Film Solar Cells (1999)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 67-68 (Apr. 1999), p. 81-88 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.81.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Modeling light trapping and electronic transport of waffle-shaped crystalline thin-film Si solar cells (1999)
    Springer
    Applied physics 69 (1999), S. 201-213 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 84.60.J; 42.15.D; 72.20.Jv
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. Monocrystalline Si films from the novel perforated-Si process are candidates for the fabrication of thin-film solar cells because their waffle shape enhances the optical absorption and hence permits the use of films with a thickness of only a few microns. We study the optics of waffle cells by three-dimensional Monte Carlo ray-tracing. A high photogeneration of 38 mA/cm2 from a film of thickness Wf=4 μm is possible due to a detached Al-back surface reflector that has an effective reflectance of 99.7% at 1250 nm. Our analytical model for light trapping in thin films explains this high reflectance. Two-dimensional numerical transport modeling reveals the existence of an optimum texture period p≈2Wf that originates from a carrier collection efficiency that increases with texture period while the photogeneration decreases with period. For well-passivated cells the optimum thickness Wf is at least one fifth of the diffusion length L. Efficiencies of 17% to 18% are feasible with waffle films of 1 to 3 μm in thickness. We introduce an analytic model for the minority carrier transport that agrees with two-dimensional numerical modeling to within 10% and reduces the computation time by orders of magnitude. This analytic model is also applicable to conformal thin-film geometries differing from the waffle geometry.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050991
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Monocrystalline Si waffles for thin solar cells fabricated by the novel perforated-silicon process (1998)
    Springer
    Applied physics 67 (1998), S. 151-154 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 84.60.J; 42.15.D; 81.15.Jj
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: 2 for this waffle-shaped film when it is attached to glass substrates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050753
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  • 5
    Digitale Medien
    Digitale Medien
    Note on the interpretation of injection-level-dependent surface recombination velocities (1995)
    Springer
    Applied physics 60 (1995), S. 523-524 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The surface recombination velocityS=U/n is defined as the ratio between the surface recombination current densityU and the excess minority carrier concentrationn at the semiconductor surface. Measurements of injection-dependent surface recombination velocities apply modulation techniques, and thus, in reality, a differential surface recombination velocityS diff=dU/dn is determined. The significance to distinguishS andS diff when evaluating measurements is shown.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538780
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Note on the interpretation of injection-level-dependent surface recombination velocities (1995)
    Springer
    Applied physics 60 (1995), S. 523-524 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 73.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. The surface recombination velocity S=U/n is defined as the ratio between the surface recombination current density U and the excess minority carrier concentration n at the semiconductor surface. Measurements of injection-dependent surface recombination velocities apply modulation techniques, and thus, in reality, a differential surface recombination velocity S diff = dU/dn is determined. The significance to distinguish S and S diff when evaluating measurements is shown.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538780
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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