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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1618-1619 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Cutting of irradiated zircaloy metal clad ceramic fuel pellets requires a special cutting saw that can be remotely operated. The remote operation is essential because of the pyrophoric nature of zircaloy metal and high radiation field associated with the irradiated fuel elements. Conventional saws cannot meet the operational requirements because these are not readily amenable for remote operation and maintenance. Hence we have developed a new laboratory scale cutting saw for cutting radioactive samples remotely. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6884-6887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductivity exists in orthorhombic Y1−xPrxSr2Cu2.85Re0.15O7+δ up to a critical concentration (xcr) of 0.65. A progressive decrease in Tc occurs as x increases from 0 to 0.65. A further increase in x leads to a tetragonal transformation and as a consequence the Tc vanishes; however, the orthorhombicity of these Sr-based compounds is much lower than that observed for the Ba analog, Y1−xPrxBa2Cu3O7−δ and, hence, the Tc. On the one hand, crystal chemistry correlations indicate that the Pr ion is in trivalent state while on the other hand, the stabilizing cation, viz., Re, is in hexavalent state which accounts for the excess oxygen (〉7.0) in the system. The high xcr value of the Sr series compared to the Ba series (xcr=0.55) is attributed to the much reduced orbital overlap of the trivalent Pr(4f ) state with the Cu(3dx2−y2)–O(2p) conduction band, via hole localization and/or pair breaking, and is not due to the much discussed hole filling by tetravalent Pr. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 427-432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out on low-temperature GaAs (LT GaAs) and LT-GaAs/AlGaAs modulation-doped photodetector (MODPD) structures grown by molecular-beam epitaxy. Samples with LT GaAs grown at 350 °C show several PL lines associated with (i) transitions involving two-dimensional electron gas in LT GaAs near the interface, (ii) band-edge transitions in the bulk LT GaAs, and (iii) transitions involving deep level defect complexes in LT GaAs. In addition a PL emission band at 1.65 eV observed in all the MODPD structures is attributed to a crossover transition at the LT-GaAs/AlGaAs interface. PR spectra of these modulation-doped structures show Franz–Keldysh oscillations which are attributed to high electric fields ((approximately-greater-than)105 V/cm) at the LT-GaAs/AlGaAs interface. PR measurements on bare LT-GaAs layers suggest that the E0 transition in LT GaAs is about 20 meV above that of the normal GaAs E0 gap. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1210-1213 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) results from a novel modulation doped AlGaAs/ low-temperature molecular beam epitaxially-grown-GaAs (LT-GaAs MODFET) heterostructure are reported. A new PL line at 1.65 eV is consistently observed in all the LT-GaAs MODFET structures investigated. A spatially indirect transition from a two-dimensional electron gas at the heterojunction interface to the holes in AlGaAs is believed to be responsible for the observed 1.65 eV PL line. LT-GaAs MODFET structures in which LT-GaAs region is grown at 350 °C show additional lines lying in the band edge region as well as deep inside the band gap region of LT-GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2711-2713 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-phase Sr-based Tb-123 phase has been synthesized by chemical stabilization. TbSr2Cu2.85Re0.15O7+δ exhibits superconductivity at Tc,zero=22 K. X-ray diffraction results suggest a relatively small orthorhombicity and neutron diffraction studies indicate an excess oxygen content (≥7.2) in the sample. Tb is present as a trivalent ion in the superconducting phase as derived from x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3105-3107 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1685-1687 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Presented here is proof-of-principle that a thin single crystal semiconductor film—when twist-wafer bonded to a bulk single crystal substrate (of the same material)—will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 Å film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their 〈110〉 directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In0.35Ga0.65P(∼1% strain) were grown with thicknesses of 3000 Å, thirty times the Matthews–Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 1674-1695 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional model consisting of continuity, momentum, species, and energy balances is considered to analyze the convective patterns that arise due to exothermic reactions occurring in a porous medium. First, the one-dimensional conduction states of the system are classified using singularity theory and the shooting technique. It is observed that there can be either one or three conduction states when the reacting fluid is a gas. Next, we use linear stability analysis to determine the boundary of the parameter values at which the conduction state loses stability leading to convective flows. Pure and mixed-mode convective solutions are then analyzed using local bifurcation theory. The formulas to evaluate the coefficients appearing in the amplitude equations are developed and used to obtain the classification (phase) diagram of the convective flows in the parameter space. The classification is presented in the unique conduction solution region in the presence and absence of mode interactions. The phase diagrams are used to identify the region of parameter values where convection has a detrimental effect on the stability of the system. It is found that the Lewis number (Le), which represents the ratio of thermal to mass diffusivity, has a profound influence on the stability boundaries. For Le〉1, the convective solutions may bifurcate subcritically and introduce an ignition point. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    International journal of dermatology 37 (1998), S. 0 
    ISSN: 1365-4632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Patients were recruited from 1 December 1994 until 31 August 1995. Those presenting with tinea cruris/corporis received 200 mg of itraconazole every day for 7 days, whereas patients presenting with tinea pedis/manus were treated with 200 mg twice a day for 7 days. Those eligible were men and women at least 18 years of age, with a clinically diagnosed dermatophytosis, confirmed by KOH examination and culture. Pregnant or nursing patients and those who did not use adequate birth control methods were excluded. Patients with a known history of chronic liver disease or other concomitant serious disease were also excluded. Patients who had received any oral antifungal or corticosteroid therapy within 30 days before enrollment or any topical antifungal or corticosteroid treatment within a week before enrollment were not eligible.Clinical and mycologic (KOH and culture) evaluation was carried out at baseline, at completion of therapy (day 7) and at the end of follow-up (day 28 for tinea cruris/corporis and day 35 for tinea pedis/manus). The investigator evaluated the following clinical symptoms at each visit: desquamation, erythema, infiltration, pruritus, exudation, maceration, vesiculation, and pustules. Clinical results were rated as: healed, markedly improved, considerable residual lesions, not changed, or worse. The categories healed and markedly improved were considered as responders.All mycology was performed centrally at the Department of Microbiology, University of Malaya.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of chemical crystallography 25 (1995), S. 743-745 
    ISSN: 1572-8854
    Keywords: Lithium binder ; X-ray structure ; 1,3-bis(8-quinolyloxy)propane
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract The X-ray crystal structure of 1,3-bis(8-quinolyloxy)propane, monoclinic, space group C2/c(No. 15),a=25.367(4);b=4.923(5) andc=14.418(4)Å; β=111.18(2)o;Z=4 has been determined by direct methods. A final least squares refinement based on 812 observed reflections (I〉2δ(I)) gave finalR values ofR f=0.043 andR w=0.034.
    Type of Medium: Electronic Resource
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