Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1454-1456
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APD's) grown by chemical beam epitaxy. These APD's also exhibit low dark current (〈150 nA at 90% breakdown), good external quantum efficiency (〉90% at λ=1.3 μm), and high avalanche gain (M0(approximately-equal-to)40).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98655
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