ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Many applications of ion sources (e.g., ion implantation in the semiconductor industry) are very sensitive to particles and have tight specifications on allowable particle number and size. Among the sources of particles are the ion source itself (due to either nucleation in the plasma, or ion bombardment of the surfaces), and the extraction electrodes (due to ion bombardment). This article investigates the processes to which such particles are subjected during their flight through the extraction electrodes. They travel at much lower velocity than the accelerated ions due to their much larger mass, and so are bombarded by these increasingly energetic ions. The processes considered during the trajectory of the particle are: charging, acceleration in the electrode fields, entrapment within the suppression gap, heating from ion bombardment, radiation cooling, melting, vaporization, and Coulomb explosion. These processes are all modeled simultaneously as the trajectory of the particle is followed. A general condition for particle trapping is developed, and it is found that in the case of silicon particles, these particles can be annihilated by a combination of Coulomb disintegration and vaporization. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1431705
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