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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4384-4387 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical and electronic aspects of a GaAs (100) surface passivated by selenium sulfide (SeS2) have been investigated by x-ray photoelectron spectroscopy and photoluminescence. It has been observed that this treatment gives rise to an arsenic selenide (As2Se3) terminated surface. No S—GaAs bonds were observed. The remarkable electronic properties and the formation of the chemically and thermally stable As2Se3 phase reveals the successful passivation. Passivation of GaAs in single step and identification of a single selenium species on the surface are considered to be the major advantages of using SeS2.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3832-3834 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron particles having diameters around 8 nm and loosely packed with nanosized copper particles have been prepared by a sol-gel route. The samples exhibit coercivities in the range 200 to 500 Oe that are typical of single-domain iron grains. The Mössbauer spectrum is consistent with the presence of α-Fe particles in the system. However, a finite value of the isomer shift is obtained that is ascribed to possible electron transfer between the iron atoms and the surrounding copper matrix.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 22 (2004), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: In the Vizianagaram area (E 83°29.442′; N 18°5.418′) of the Eastern Ghats Belt, India, a suite of graphite-bearing calc-silicate granulites, veined by syenitic rocks, developed wollastonite-rich veins at 6–7 kbar and 〉 850 °C. During subsequent near-isobaric cooling wollastonite was replaced by calcite + quartz and a graphic intergrowth of fluorite + quartz ± clinopyroxene. Titanite with variable Al and F contents is present throughout the rock. Combining the compositional variation of titanite and recent experimental data, it is demonstrated that the mineral assemblage, the composition of coexisting fluids and the mobility of Al exert a far greater control on the composition of titanite than pressure, temperature or the whole rock composition. Thermodynamically computed isothermal–isobaric logfO2– logfCO2 and logfF2– logfO2 grids in the systems Ca–Fe–Si–O–F (CISOF; calcite-free) and Ca–Fe–Si–O–F–C–H (CISOFV; calcite-present) demonstrate the influence of bulk rock and fluid compositions on the stability of the fluorite-bearing assemblages in diverse geological environments and resolve the problem of the stability of titanite in fayalite + fluorite-bearing rocks in the Adirondacks. The mineralogy of the studied rocks and the topological constraints tightly fix the logfO2, logfF2 and logfCO2 at −15.8, −30.6 and 4.1, respectively, at 6.5 kbar and c. 730 °C. Because of the similarity in the P–T conditions, the compositions of pore fluids in the fluorite-bearing assemblages of the Adirondacks and the Eastern Ghats Belt have been compared.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6274-6278 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2677-2679 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A focused Ga-ion beam is used to conduct lithography on a diamond (100) surface with the assistance of various gases (Cl2, O2, and XeF2). The beam-induced dilation and sputtering of the surface are measured by atomic force microscope. The dilation is found to be insensitive to the presence of assisting gases at low doses, while the sputtering is enhanced by O2 and XeF2 at high doses. The topographic evolution as a function of the ion dose is well described by a proposed semiempirical equation. Combining physical sputtering and XeF2-assisted etching, the lithographic process has been used to fabricate submicron structures on diamond surfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 28 (1996), S. 429-476 
    ISSN: 0066-4189
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1159-1161 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbS particles of average diameters ranging from 9.9 to 18.0 nm have been synthesized within a polyacrylamide matrix. The percolative chains of these particles exhibit intrinsic semiconducting behavior at temperatures higher than 340 K. The estimated band gap for these particles are found to be much higher than that of bulk PbS being in the range 1.03 to 1.49 eV. The low-temperature conductivity of these composites appears to be controlled by an electron tunneling mechanism.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 414-416 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Glasses in the system x As2O3(1−x) SiO2 with 0.05〈x〈0.16 have been prepared by sol-gel route. They exhibit anomalously large dielectric permittivity in the temperature range 275 to 325 K. The permittivity values are found to be in the range 400–100 000 depending on the glass composition and the frequency of measurement. This effect is believed to arise due to a fairly large value of ratio [As5+]/[As3+] in these glasses and its drastic change as a function of temperature.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 415-417 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 120-122 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined process of electropolishing, focused-ion-beam lithography, and controlled anodization is used to fabricate anodic alumina films with ordered nanochannels. The ion beam is used to create a hexagonally close-packed lattice of concaves on a polished aluminum surface and the concaves act as pinning points for guiding the growth of nanochannels in the following anodization step. By carefully matching the lattice constant (100 nm) with the anodization voltage, ordered nanochannels with aspect ratio of ∼100 are fabricated. The effects of the ion dose and its corresponding depth of the concaves on the ordering of the nanochannel array are investigated and a minimum depth of 3 nm is found to be necessary for effective guidance of the growth of ordered nanochannels. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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