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  • 1
    Electronic Resource
    Electronic Resource
    Native acceptor levels in Ga-rich GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 596-599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence, photocapacitance, and thermal annealing study of Ga-rich GaAs has revealed the complex behavior of acceptor levels at 68–77 and 200 meV above the valence band. The concentration of all levels is enhanced by Ga-rich growth conditions, however, only the 77- and 200-meV levels formed preferably in n-type GaAs are consistent with a double-acceptor model of the gallium antisite defect. In p-type GaAs the 68-meV level associated with a different single-acceptor defect is dominant. It is argued that the inhibited formation of double-acceptor GaAs defects in p-type crystals is caused by the Fermi-energy control of the defect formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343114
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of plastic deformation on electronic properties of GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3791-3798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of plastically deformed (in compression) GaAs was carried out employing deep-level spectroscopies, optical absorption, and electronic transport measurements. Deformation-induced changes in the free-carrier concentration, the mobility, and occupation of deep levels were associated with a deep acceptor defect. Changes of the optical absorption in deformed samples were found to be due to a localized stress field of dislocations rather than transitions via localized levels. No evidence was found of any meaningful increase (〉2×1015 cm−3) of the concentration of EL2 or other midgap donors for deformation up to about 3%. Thus, it is evident that the enhancement of the electron paramagnetic resonance signal of the arsenic antisite AsGa in deformed semi-insulating GaAs must be due to the increased ionization of AsGa rather than the generation of new antisite defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339218
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP'' [J. Appl. Phys. 65, 3459 (1989)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2768-2768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344502
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of GaAs with inverted thermal conversion (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3482-3485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semi-insulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 109 Ω cm of 300 K) than those attained in standard SI GaAs (e.g., 107–108 Ω cm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339271
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "New intrinsic gettering process in silicon based on interactions of silicon interstitials'' [J. Appl. Phys. 60, 615 (1986)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2587-2587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339864
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  • 6
    Electronic Resource
    Electronic Resource
    Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 359-364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocation density in bulk GaAs crystals (up to 4 mm thick) grown by liquid-phase electroepitaxy (LPEE) is found to be significantly reduced (by as much as a factor of 20) relative to that in the substrate. This reduction takes place when the thickness of the growing crystal exceeds a critical value of 50–70 μm. It is accompanied by a formation of misfit dislocation arrays identified by transmission electron microscopy in the interface region between the substrate and grown crystals. These findings suggest that the reduction of the dislocation density is caused by a small but finite lattice mismatch between the growing epitaxial-quality crystal and the relatively inferior quality melt-grown substrate. Dislocations which propagate from the substrate into the LPEE crystal are forced by the misfit stress to move laterally forming misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338831
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  • 7
    Electronic Resource
    Electronic Resource
    New intrinsic gettering process in silicon based on interactions of silicon interstitials (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 615-621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new intrinsic gettering process was found in silicon crystals subjected to a three-step annealing sequence. The process involves native point defects (silicon interstitials) rather than residual oxygen impurity, and thus it can be realized in crystals with low or virtually zero oxygen concentration. The key characteristics of the process (i.e., denuding and gettering efficiency and the role of annealing ambient) are discussed in conjunction with a kinetic model involving diffusion of silicon interstitials. The identity of the intrinsic gettering centers was pursued by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337457
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  • 8
    Electronic Resource
    Electronic Resource
    Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3309-3316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, we were able to grow reproducibly semi-insulating GaAs by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344126
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  • 9
    Electronic Resource
    Electronic Resource
    Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3459-3469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the effects of Ti doping on the electrical and optical properties of GaAs and InP has been carried out employing both melt and solution-grown crystals. Utilizing deep level transient spectroscopy, Hall effect measurements, photoconductivity, and optical absorption measurements, it was found that Ti introduces two deep levels in GaAs at Ec −0.23 eV and Ec −1.00 eV which were identified as the Ti3+/Ti2+ acceptor level and the Ti4+/Ti3+ donor level, respectively. In InP the Ti4+/Ti3+ donor level was found near midgap at Ec −0.63 eV, while the Ti3+/Ti2+ acceptor level was found to lie within the conduction band. As a consequence of the midgap position of this donor level, we developed a formulation for producing semi-insulating InP based on doping with Ti to compensate shallow acceptors. Resistivities in excess of 107 Ω cm can easily be obtained using this technique. This is the first semi-insulating III-V compound having a compensation mechanism based on a deep donor impurity. In view of the fact that Ti is expected to have a very low diffusivity in InP, Ti-doped semi-insulating InP should exhibit far greater thermal stability than Fe-doped InP and thus it should prove technologically significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342614
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  • 10
    Electronic Resource
    Electronic Resource
    Optical and electronic properties of vanadium in gallium arsenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 163-170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of vanadium doping on the electrical and optical properties of GaAs were systematically studied in melt-grown crystals prepared by the liquid-encapsulated Czochralski and horizontal Bridgman techniques and in epitaxial crystals prepared by liquid-phase electroepitaxy. By employing deep-level transient spectroscopy, Hall-effect measurements and the V2+(3d3) and V3+(3d2) intracenter optical-absorption spectra, one vanadium-related level was identified in all crystals, i.e., the substitutional-vanadium acceptor level (V3+/V2+) at 0.15±0.01 eV below the bottom of the conduction band. From the absorption measurements we conclude that the vanadium (V4+/V3+) donor level must be located within the valence band. Because of its energy position, the above level cannot account for the reported semi-insulating properties of V-doped GaAs. We observed no midgap levels resulting from vanadium-impurity (defect) complexes. The high resistivity reported for certain V-doped GaAs crystals must result from indirect effects of vanadium, such as the gettering of shallow-level impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339174
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