Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 3309-3316
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, we were able to grow reproducibly semi-insulating GaAs by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344126
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