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  • 1
    Electronic Resource
    Electronic Resource
    Determination of leakage resistance of Schottky contacts by photovoltage measurements (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7361-7364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The leakage resistance of Schottky contacts has been determined from photovoltage measurements, thus allowing the contribution of the leakage current to the current transport in the Schottky contacts to be easily evaluated. It is found that under identical conditions of sample fabrication, different Schottky contacts have nearly the same leakage resistance. A comparison between a theoretical calculation and experimental data for the photocurrent-photovoltage relationship shows that the leakage current becomes dominant at low temperatures and small photocurrents. In these regimes, the current transport is dominated by the leakage current, and as a result, a linear relation (the Ohmic rule) between the photocurrent and the photovoltage is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356649
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of propagation loss of sine-generated and constant radius S bends in Al(Ga)As waveguides (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 730-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Constant radius and sine-generated S bends were fabricated from double heterostructure Al(Ga)As waveguides. No significant difference in the loss characteristics between the two structures was observed. These results are within the bounds of our beam propagation method calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355240
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  • 3
    Electronic Resource
    Electronic Resource
    Limits to ion energy control in high density glow discharges: Measurement of absolute metastable ion concentrations (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7188-7194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unprecedented demands for uniformity, throughput, anisotropy, and damage control in submicron pattern transfer are spurring development of new, low pressure, high charge density plasma reactors. Wafer biasing, independent of plasma production in these new systems is intended to provide improved ion flux and energy control so that selectivity can be optimized and damage can be minimized. However, as we show here, an inherent property of such discharges is the generation of significant densities of excited, metastable ionic states that can bombard workpiece surfaces with higher translational and internal energy. Absolute metastable ion densities are measured using the technique of self-absorption, while the corresponding velocity distributions and density scaling with pressure and electron density are measured using laser-induced fluorescence. For a low pressure, helicon-wave excited plasma, the metastable ion flux is at least 24% of the total ion flux to device surfaces. Because the metastable ion density scales roughly as the reciprocal of the pressure and as the square of the electron density, the metastable flux is largest in low pressure, high charge density plasmas. This metastable ion energy flux effectively limits ion energy and flux control in these plasma reactors, but the consequences for etching and deposition of thin films depend on the material system and remain an open question.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352391
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  • 4
    Electronic Resource
    Electronic Resource
    A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4739-4742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352082
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  • 5
    Electronic Resource
    Electronic Resource
    Diagnostics of high density plasma reactors used in the processing of electronic and photonic materials (invited) (abstract) : Proceedings of the 9th topical conference on high temperature plasma diagnostics (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4920-4920 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High-density plasmas are being used in the manufacture of electronic devices and systems because they provide high throughput at low pressure and low ion energy. Low pressure is desirable for maximizing process uniformity over large substrates while low ion energy is desirable for minimizing process-induced damage. However, the optimal design for a high density plasma reactor is unclear and the technology has largely developed empirically: many alternatives for magnetic and geometric design are offered for the same processing applications. In this talk we discuss diagnostic measurements of high density plasma reactors and how they can be used in developing improved reactor designs and in providing insight into materials processing. Laser-induced fluorescence measurements of metastable ion velocity distributions are made in both Ar and Cl2 electron cyclotron resonance and helicon plasmas. The effects of magnetic field configuration, power, and pressure on the energy and angular distributions of the ions will be described along with electron density measurements made by microwave interferometry. Where appropriate, comparisons will be made with the recent theoretical results of Graves and Porteous [D. B. Graves and R. K. Porteous, American Vacuum Society National Symposium, Seattle, WA, November (1991)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143548
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  • 6
    Electronic Resource
    Electronic Resource
    An environmental cell transmission electron microscope (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1438-1444 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An aperture-limited, differentially pumped environmental cell has been developed and installed in a JEOL 4000 EX electron microscope. With this environmental cell it is possible to observe, at high spatial resolution, the detailed changes in microstructure that occur during the interaction between a solid and a gaseous environment. The cell has been pressurized to 70 Torr with H2 gas for several hours with no adverse effects on the microscope performance. While the initial tests have been performed with hydrogen gas, the materials used to construct the environmental cell can tolerate corrosive environments. The key features of the environmental cell design along with the results from some applications are presented in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142464
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  • 7
    Electronic Resource
    Electronic Resource
    Improvement in gate oxide integrity on thin-film silicon-on-insulator substrates by lateral gettering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3397-3399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a significant improvement in gate oxide integrity is achieved, with increased oxide breakdown voltages and charge-to-breakdowns, as well as a reduction in localized oxide charge trapping. The same gettering effect on separation-by-implantation-of-oxygen and bonded silicon-on-insulator substrates suggests that the lack of effective gettering is mainly responsible for the oxide degradation regardless of the TFSOI type. This work also demonstrates the feasibility of achieving bulk-comparable gate oxides on TFSOI substrates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120347
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  • 8
    Electronic Resource
    Electronic Resource
    Thin-film metrology of silicon-on-insulator materials (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic rotating-analyzer ellipsometry employing a compensator was used to measure the ellipsometric angles and depolarization from 0.73 to 5.4 eV of commercial separation by implantation of oxygen wafers. The data were analyzed to find the thicknesses of the native oxide cap, the top Si layer, and the buried oxide (BOX). From the depolarization in the spectral region of interference fringes, we determine layer thickness nonuniformities. Although a reasonable agreement between the data can be found by describing the BOX with the optical constants of thermal oxide, it can be improved by modeling the BOX as an effective medium consisting of thermal oxide and amorphous Si. The physical justification for this model is the presence of Si islands near the BOX/substrate interface. We compare our ellipsometry results with a destructive analysis using electron microscopy and secondary ion mass spectrometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125651
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanism of Release of Nucleotidic Material by Fermenting Brewer's Yeast (1968)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 33 (1968), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: SUMMARY— When a strain of brewer's yeast grown under suitable conditions was suspended in a solution of fermentable sugar, nucleotides and other U.V.–absorbing materials were rapidly released from the cells. The extent of release was dependent on the pH of the medium, the temperature, the concentration of fermentable sugar and on the presence of membrane–protecting (Ca++ or Mg++) or membrane–damaging (butanol, detergent) reagents. The released material was of low molecular weight and appeared to originate in a free intracellular pool. It was concluded that the mechanism of release of nucleotidic material was the result of a change in permeability of the cytoplasmic membrane of yeast contingent upon the transport and metabolism of fermentable sugar. Leakage of nucleotidic material from yeast was considered to be a normal physiological process of consequence in the brewing and wine–making industries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1968.tb01334.x
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  • 10
    Electronic Resource
    Electronic Resource
    ESTIMATION OF TRANSITION PROBABILITIES IN A NONSTATIONARY FINITE MARKOV CHAIN (1972)
    Oxford, UK : Blackwell Publishing Ltd
    Metroeconomica 24 (1972), S. 0 
    Details
    ISSN: 1467-999X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-999X.1972.tb00191.x
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