Library

X
Language
Preferred search index
Number of Hits per Page
Default Sort Criterion
Default Sort Ordering
Size of Search History
Default Email Address
Default Export Format
Default Export Encoding
Facet list arrangement
Maximum number of values per filter
Auto Completion
Feed Format
Maximum Number of Items per Feed
Permalink If you want to be able to use settings permanently, you must save your settings and then set a Bookmark to the permalink
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Distributions of C2 and C3 radical densities in laser-ablation carbon plumes measured by laser-induced fluorescence imaging spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4033-4039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured temporal variations of the distributions of C2 and C3 radical densities in carbon plumes produced by laser ablation of graphite in ambient He gas. Laser-induced fluorescence imaging spectroscopy was used for the measurement. The temporal variations of total numbers of C2 and C3 contained in plumes were evaluated by integrating the density distributions. The experimental observations have shown that the gas-phase production of C2 is comparable to the direct production from the target, while C3 is mainly produced in gas phase by three-body reactions between C and C2. In addition, we have discussed a scenario for the temporal evolution of heavy clusters (Cn with n≥4). The present results are useful for understanding initial formation processes of carbon clusters in laser-ablation plumes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455151
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ultrahigh resolution of calixarene negative resist in electron beam lithography (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1297-1299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115958
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Radiation damage effects in ion-implanted Bi-Sr-Ca-Cu-O superconducting thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transition temperature (Tc) control and annealing effects of Bi2.0Sr1.4Ca1.8Cu2.2Oy superconducting thin films implanted by 200 keV Ne+ have been investigated. Tc end points for 0.4-μm-thick Bi2.0Sr1.4Ca1.8Cu2.2Oy films for 0, 1×1012, and 1×1013 ions/cm2 doses are 78, 76, and 54 K, respectively. The ion dose, to achieve a nonsuperconductor for Bi2.0Sr1.4Ca1.8Cu2.2Oy films, is two or more orders of magnitude lower than that for YBa2Cu3O7−x films. The c-lattice constant increases were observed for the implanted films. Moreover, it was confirmed that the superconducting characteristics for the implanted films are recovered by annealing in O2 atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100499
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Reactive ion beam etching of Y-Ba-Cu-O superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 69-71 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that a reactive ion beam etching (RIBE) using Cl2 gas is useful for microfabrication of Y-Ba-Cu-O superconductors. The etching yield enhancement of Y-Ba-Cu-O is observed for Cl2 RIBE. The etching yield of Y-Ba-Cu-O at 400 V accelerating voltage, 2×10−3 Torr Cl2 pressure for Cl2 RIBE is 2, which is twice that for Ar ion beam etching. Y-Ba-Cu-O submicron patterns have been fabricated by focused ion beam lithography and Cl2 RIBE. Moreover, a Y-Ba-Cu-O superconducting line with a 4-μm linewidth has been fabricated by annealing an as-sputtered Y-Ba-Cu-O line pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99321
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Annealing effects for implanted Y-Ba-Cu-O superconductors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 936-938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing effects of Y-Ba-Cu-O superconductor thin films implanted by 200-keV Ne+ have been investigated. Transition temperature (Tc) end points for 0, 1×1014, 1×1015, and 1×1016 ions/cm2 doses are 75, 71, 62, and 16 K, respectively. The film implanted at 1×1017 ions/cm2 dose indicates nonsuperconductors. The c-lattice constant increases were observed for the implanted films. It is confirmed that the superconducting characteristics for film, which is implanted at 1×1016 ions/cm2 dose, are recovered by annealing in O2 atmosphere at 940 °C for 4 h. Moreover, microcrystal growth caused by annealing the implanted film was observed on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341897
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Stable supermode operation in phase-locked laser diode arrays with three index waveguides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2783-2785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase-locked laser diode array with three index waveguides is described. The array has a novel structure which prevents channels from being etched back. As the result, the waveguide elements in the array are very uniform. A stable 180° phase mode oscillation is obtained up to 50-mW output power in the single longitudinal mode and three supermodes are observed simultaneously above 50-mW output power. The near-field patterns and the far-field patterns of these supermodes are in good agreement with the theoretical results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335872
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    RELEASE OF RADIOACTIVE GLUTAMIC ACID FROM THIN SECTIONS OF GUINEA-PIG OLFACTORY CORTEX IN VITRO (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 24 (1975), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Slices from the guinea-pig olfactory cortex were incubated in the medium containing [14C]glutamate and release of radioactive compounds was subsequently studied in the standard or high potassium media or during repetitive stimulation of the lateral olfactory tract (LOT) while electrical activity of the tissue was monitored. In 50 mm-potassium concentration, the pre- and postsynaptic potentials were completely suppressed and effluxes of total 14C and [14C]glutamate increased. No significant increase in [14C]glutamine was found. When Ca2+ concentration was reduced from 2·4 to 0·12 mm, the postsynaptic potential disappeared and release of [14C]glutamate in 50 mm-potassium decreased to about a third of that in 2·4 mm-Ca2+. Repetitive LOT stimulation enhanced release of total 14C in thinner slices but caused no significant increase in [14C]glutamate efflux. These findings were discussed in relation to the possibility that glutamate is a mediator between the LOT fibres and cortical neurons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1975.tb11872.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    EFFECT OF STIMULATION OF EXCITATORY NERVE TRACT ON RELEASE OF GLUTAMIC ACID FROM OLFACTORY CORTEX SLICES IN VITRO (1976)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 26 (1976), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract— Thin sections prepared from the olfactory cortex of the guinea pig were incubated in a medium containing [14C]glutamate, and release of radioactive compounds and electrical activity were subsequently examined in the presence of l-cysteate. The postsynaptic potential was almost completely suppressed in the medium containing l-cysteate, whereas the presynaptic potential was unaffected. Repetitive stimulation of the excitatory input of the lateral olfactory tract enhanced release of radioactive glutamate. The facilitatory effect of lateral olfactory tract stimulation increased with increase in stimulus frequency and was dependent on calcium. Release of radioactive gluiamine was not enhanced by lateral olfactory tract stimulation. Phenobarbitone sodium markedly depressed both the postsynaptic potential and the effect of lateral olfactory tract stimulation on glutamate release. These results indicate that stimulation to the lateral olfactory tract enhances liberation of glutamate from the tract nerve terminals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1976.tb01500.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Sub-10 nm lithography and development properties of inorganic resist by scanning electron beam (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3064-3066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the self-developing properties of an AlF3-doped LiF inorganic resist under irradiation by a scanning electron beam with an energy of 20–50 keV are reported. The self-development properties strongly depended on both AlF3 concentration and film thickness. To explain this behavior, we presented an exposure model that takes into account a balance between a carbon contamination and a diffusion process. By optimizing resist qualities, we were able to delineate 5 nm linewidth patterns with 60 nm periodicity using a 30 kV electron beam. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114279
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2284-2286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam (EB) dry etching for Si and GaAs has been studied by utilizing showered electron-beam assisted etching in the presence of Cl2 gas. Anisotropic etching has been demonstrated for both Si and GaAs EB dry etching. Si and GaAs patterns with 0.6 and 0.3 μm linewidths have been obtained at a dose of 2×10−2 C/cm2 and 1×10−3 C/cm2. It was confirmed, through measuring photoluminescence, that damage induced by EB dry etching is nearly the same as that caused by gas etching and less than damage induced by reactive ion-beam etching and ion-beam etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106044
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...