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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1984-1986 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal impurity release from structural defects in polycrystalline silicon was studied following thermal treatments, and, in addition, a correlation between impurity distributions and structural defects was established. Impurities were mapped with synchrotron-based x-ray fluorescence in the as-grown state, after rapid thermal annealing and following aluminum gettering treatments. The goal of this work was to determine if impurity release from structural defects limits gettering of metal impurities. The results reveal that nickel and copper metal impurities are primarily found at dislocations in as-grown crystals, and the release of these impurities from defects occurs rapidly with no apparent barrier to dissolution. Gettering treatments dissolved metal impurity precipitates to 〈2–5 nm in radii; however, the material performance was not greatly enhanced. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4282-4288 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we have utilized characterization methods to identify the nature of metal impurity precipitates in low performance regions of multicrystalline silicon solar cells. Specifically, we have utilized synchrotron-based x-ray fluorescence and x-ray absorption spectromicroscopy to study the elemental and chemical nature of these impurity precipitates, respectively. We have detected nanometer-scale precipitates of Fe, Cr, Ni, Cu, and Au in multicrystalline silicon materials from a variety of solar cell manufacturers. Additionally, we have obtained a direct correlation between the impurity precipitates and regions of low light-induced current, providing direct proof that metal impurities play a significant role in the performance of multicrystalline silicon solar cells. Furthermore, we have identified the chemical state of iron precipitates in the low-performance regions. These results indicate that the iron precipitates are in the form of oxide or silicate compound. These compounds are highly stable and cannot be removed with standard silicon processing, indicating remediation efforts via impurity removal need to be improved. Future improvements to multicrystalline silicon solar cell performance can be best obtained by inhibiting oxygen and metal impurity introduction as well as modifying thermal treatments during crystal growth to avoid oxide or silicate formation © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2519-2521 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of impurities introduced in single and polycrystalline silicon via chemomechanical polishing was studied extensively. Using the electron beam induced current mode of a scanning electron microscope, chemomechanical polishing of boron-doped FZ silicon is shown to introduce impurities which decorate and electrically activate swirl defects. Undecorated swirl defects do not behave as carrier recombination sites. Chemomechanical polishing and preferential etching of boron-doped polycrystalline silicon produced etch pits which increased in concentration with decreasing resistivity, indicating an interaction between the polishing impurity and boron. The impurity is shown to form discrete points of electrical activity homogeneously in a thin surface region of the material as well as increase the electron beam induced current contrast of dislocations and grain boundaries.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2840-2842 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The gettering efficiency of low carbon silicon has been found to be greatly enhanced with ramped annealing by creating a high concentration of oxygen precipitates and related defects. This ramped low carbon material and both the standard and ramped high carbon materials have a greatly enhanced oxygen precipitation rate, relative to the standard low carbon standard anneal. However, the high carbon material's gettering efficiency and stability are low, compared to the ramped low carbon material, due to a reduction of the oxygen precipitate's strain field and concentration of related defects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3482-3484 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity and minority carrier lifetime distributions were studied in as-grown multicrystalline silicon used for terrestrial-based solar cells. Synchrotron-based x-ray fluorescence and the light beam induced current technique were used to measure impurity and lifetime distributions, respectively. The purpose of this work was to determine the spatial relation between transition metal impurities and minority carrier recombination in multicrystalline silicon solar cells. Our results reveal a direct correlation between chromium, iron, and nickel impurity precipitates with regions of high minority carrier recombination. The impurity concentration was typically 5×1016 atoms/cm2, indicating the impurity-rich regions possess nanometer-scale precipitates. These results provide the first direct evidence that transition metal agglomerates play a significant role in solar cell performance. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3060-3062 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effectiveness of copper gettering by implantation-induced cavities in competition with internal gettering sites in silicon was demonstrated. The cavities were formed in the near surface region by He implantation and annealing while the internal gettering sites were created in the material's bulk by a ramped hi–lo–hi oxygen precipitation heat treatment. Ion implantation was used to controllably introduce the copper. The quantity of implanted copper was below that corresponding to saturation of solution throughout the wafer at the gettering temperatures of 700 and 800 °C. The cavities were found to be an effective gettering site in the presence of internal gettering sites with only a small amount of copper being gettered at the internal gettering sites. These results have important implications for optimal gettering of metallic impurities from integrated circuit device regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3598-3600 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dissolution of copper precipitates in Czochralski silicon has been studied with synchrotron-based x-ray fluorescence. Copper has been introduced and allowed to precipitate at oxygen precipitates and growth-related stacking faults. The dissolution of copper precipitates is monitored after low-temperature anneals. This study is designed to determine whether copper can be released from these precipitation sites at low temperatures such that contamination and subsequent device degradation of an integrated circuit device could occur. Our results demonstrate copper dissolution back into the silicon matrix at temperatures as low as 360 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 81-86 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1979-1984 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 47-48 (July 1995), p. 165-170 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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