Library

X
Language
Preferred search index
Number of Hits per Page
Default Sort Criterion
Default Sort Ordering
Size of Search History
Default Email Address
Default Export Format
Default Export Encoding
Facet list arrangement
Maximum number of values per filter
Auto Completion
Feed Format
Maximum Number of Items per Feed
Permalink If you want to be able to use settings permanently, you must save your settings and then set a Bookmark to the permalink
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6039-6041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360542
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Measurements of frequency upconversion and picosecond excitation-correlation luminescence spectra in GaAs quantum wells and determination of time constants describing exciton dynamics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5921-5931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the picosecond dynamics of free carriers and excitons in high-quality GaAs quantum wells at 8 K using frequency upconversion (UC) and nonlinear picosecond excitation-correlation (PEC) luminescence spectroscopy under nonresonant excitation conditions with carrier densities of a few 1010 cm−2. We analyze the measurements using a theoretical model of the coupled free electron–hole pair and exciton dynamics, incorporating important density-dependent nonlinear effects, caused by exciton collisions and fermion exclusion. The time-resolved UC photoluminescence (PL) spectra are used to deduce time constants related to free electron–hole (e–h)-pair transformation into excitons and exciton transfer from large K to small K (k is the exciton wave vector). It is shown that unambiguous determination of exciton radiative and nonradiative decay times are possible when both UC and PEC PL spectra are considered simultaneously. We carry out a detailed line-shape analysis of the picosecond UC and PEC PL spectra. We find that while collision broadening is mainly responsible for the observed nonlinear excitonic PEC signal, the PEC PL spectra can be fully explained only when additional nonlinear effects, such as density-dependent radiative lifetime and fermion exclusion, are included in the analysis. From a comparison of the time evolution of both the PEC and UC PL spectra with theory, the time constants introduced in the model to describe free carrier density decay, transfer of excitons with K≠0 to K≈0 states, and their radiative and nonradiative decay are estimated to be about 50, 15, 60, and 1800 ps respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363821
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Mechanisms for Si dopant migration in molecular beam epitaxy AlxGa1−xAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4056-4060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because of well-known surface segregation effects in molecular beam epitaxy growth, Si dopant atoms deposited as thin layers in AlxGa1−xAs typically become distributed over many atomic layers. We have measured the Si depth distributions in (100) and (311)A samples grown at temperatures between 420 and 655 °C, with Al fraction x=0, 0.1, and 0.32. The surface migration decay length Λ for a Si atom on a growing (100) surface is strongly temperature dependent but nearly independent of x, with Λ(approximate)8 nm at 655 °C. The x=0(100) measurements show evidence for a minimum value Λ(approximate)0.6 nm at low temperatures and a maximum value Λ(approximate)8.5 nm at high temperatures. The data are in accord with a thermally activated surface segregation process with activation energy (1.8±0.4) eV acting in parallel with a temperature independent surface segregation mechanism. The (311)A surface shows Λ=(3.3±0.1) nm virtually independent of temperature for x=0. The Si decay length for the (311)A surface strongly increases with x, and for x=0.32 there is no significant difference in Λ for the (100) and (311)A surfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308073
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Dependence of the performance of GaAs/AlGaAs quantum well infrared photodetectors on doping and bias (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6517-6520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured and theoretically analyzed the doping density, ND, dependence of the intersubband absorption coefficient α, the quantum efficiency η, the optical gain g, the dark current ID, and the detectivity D*. We discuss the optimum doping and show that D* depends only weakly on both ND and also the bias voltage, Vb. In particular, we find that the dark current can be reduced by three orders of magnitude, without significantly reducing the detectivity. This would substantially alleviate the undesirable filling of imaging array multiplexer storage capacitors, thereby allowing longer integration times and thus higher sensitivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348861
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 523-525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is presented of MeV ion beam amorphization of epitaxial superlattices of GeSi-Si and GaAs-AlAs. In both superlattice systems, we observe preferential damage of one layer type (using transmission electron microscopy and Rutherford backscattering). Selective amorphization of the faster-damaging layers is demonstrated at higher doses, allowing us to form amorphous-crystalline (a-c) superlattices of c-Si/a-GeSi and c-AlAs/a-GaAs. By studying the buildup of damage in the two systems, we deduce differences between the ion beam damage processes in group III-V and IV semiconductors. The most marked distinction is that the AlAs layers inhibit amorphization of the GaAs contiguous with the interface, while Si layers do not appear to affect the amorphization of the adjacent GeSi. This leads us to the tentative conclusion that GaAs amorphization is strongly affected by the local concentration of point defects which may diffuse hundreds of angstroms at ≈80 K and recombine in the AlAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104602
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Noninteracting beams of ballistic two-dimensional electrons (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 263-265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that two beams of two-dimensional ballistic electrons in a GaAs-AlGaAs heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. This allows electrical signal channels to intersect in the same plane with negligible crosstalk between the channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104683
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Atomically precise superlattice potential imposed on a two-dimensional electron gas (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 726-728 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have been able to fabricate a two-dimensional electron gas containing an atomically precise, lateral Kronig–Penney potential of 102 A(ring) periodicity. The structure was formed by modulation-doped molecular beam epitaxy overgrowth on the cleaved edge of a 71 A(ring) GaAs/31 A(ring) AlGaAs compositional superlattice. Low-temperature magnetotransport reveals clear quantum Hall characteristics. From the onset of the Shubnikov–de Haas oscillations at 0.25 T we deduce a lower limit of the mobility of μ(approximately-greater-than)40 000 cm2/V s at an electron density of 3.0×1011 cm−2 and infer that the carriers are crossing more than 200 GaAs/AlGaAs interfaces without losing phase coherence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104528
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Field-induced resonant tunneling between parallel two-dimensional electron systems (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1497-1499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105157
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 65-67 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature limit to GaAs molecular beam epitaxy (MBE) is studied at temperatures from 250 °C to room temperature. Using transmission electron microscopy of layers grown under a variety of conditions we show that, as for Si MBE, there is an epitaxial thickness hepi at which a growing epitaxial layer becomes amorphous. The temperature, growth rate, composition, and defect density all appear to be constant during growth of the epitaxial layer, and (in analogy with Si MBE) we tentatively associate the breakdown of epitaxy at hepi with roughening of the growth surface. We demonstrate that hepi depends strongly on composition, increasing rapidly with Ga/As ratio at fixed temperature. At fixed Ga/As ratio, hepi shows an abrupt increase from 〈200 to (approximately-greater-than)5000 A(ring) at 210 °C. The results have implications for the growth of GaAs/GaAs for high-speed photodetectors, as well as possible applications to GaAs/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Energy levels of very short-period (GaAs)n-(AlAs)n superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy levels of very short-period (GaAs)n-(AlAs)n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are Xx,y for n≤3 and Xz for n=4, respectively. (Here Xz is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al0.5Ga0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103576
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...