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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of thin-film (Ba0.5,Sr0.5)TiO3 by the laser ablation technique and electrical properties (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2999-3003 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba0.5,Sr0.5)TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O7−x (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 °C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/μm2 at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 μA/cm2 at an applied electric field of 0.15 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357547
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  • 2
    Electronic Resource
    Electronic Resource
    Dielectric properties of azo dye-poly(methyl methacrylate) mixtures (1987)
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 1797-1801 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00174a016
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  • 3
    Electronic Resource
    Electronic Resource
    CO2-laser ablation of Bi-Sr-Ca-Cu oxide by millisecond pulse lengths (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3069-3071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved ablation of Bi-Sr-Ca-Cu oxide from single targets of superconducting pellets by CO2-laser pulses of l ms length to grow superconducting thin films. Upon annealing, the 6000-A(ring) thin films have a Tc (onset) of 90 K and zero resistance at 78 K. X-ray diffraction patterns indicate the growth of single-phase thin films. This technique allows growth of uniform single-phase superconducting thin films of lateral area greater than 1 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345406
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  • 4
    Electronic Resource
    Electronic Resource
    High-density Bi-Pb-Sr-Ca-Cu-O superconductor prepared by rapid thermal melt processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1466-1468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high quality, dense Bi-Pb-Sr-Ca-Cu-O superconductor has been successfully synthesized by rapid thermal melt processing. Conventionally sintered pellets were melted at 1200 °C, cooled rapidly, and then annealed. As-melted samples exhibited semiconductor behavior, which upon annealing became superconducting at 115 K [Tc(zero)=105 K]. A detailed study of various processing techniques has been carried out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101584
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 254-256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue of Pb(Zr0.52Ti0.48)O3 (PZT) thin-film capacitors was studied under UV light (He-Cd laser, λ=325 nm). The remanent polarization of the PZT film capacitors increased upon light illumination. Fatigue resistance was also improved under UV light. During fatigue test, the change in polarization of PZT films upon UV light illumination increased gradually with cycling. These results were examined within the framework of the polarization screening model, which is suggested as an essential process for fatigue. This leads to a conclusion that more charged defects are involved in the fatigue process through internal screening of polarization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112617
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  • 6
    Electronic Resource
    Electronic Resource
    Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 294-296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (〈1 s) and slow (∼hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111969
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 27-29 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.52Ti0.48)O3(PZT)/Y1Ba2Cu3Ox(YBCO) heterostructures have been grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 °C or by using various substrates such as SrTiO3(100), MgO(100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35%–50% loss of the remanent polarization after 109 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109739
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth and properties of YBa2Cu3Ox-Pb(Zr0.6Ti0.4)O3-YBa2Cu3Ox trilayer structure by laser ablation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 528-530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown YBa2Cu3Ox-Pb(Zr0.6Ti0.4)O3-YBa2Cu3Ox multilayer structure on SrTiO3 and Al2O3 substrates using laser ablation. The deposition conditions for the growth of trilayers and their properties are studied in this investigation. Scanning electron microscope images and x-ray diffraction analyses indicate that all the constituent films in the trilayer grow epitaxially on SrTiO3 and were highly oriented on Al2O3. Transport measurements on these multilayers show that top YBa2Cu3Ox films have good superconducting properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107877
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  • 9
    Electronic Resource
    Electronic Resource
    Processing and properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films by pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1611-1613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ thin films of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3, (PMN-PT), with composition x=0.1, 0.3, 0.35, and 0.4, were deposited on MgO(100) substrates by pulsed laser deposition. The optimum conditions to form (100) oriented PMN-PT perovskite phase were at substrate temperatures in the range of 535 to 575 °C with an oxygen pressure of 200 mTorr. The Mg content in PMN-PT films was found to be essential to the formation of perovskite phase. Heterostructures of PMN-PT/La0.5Sr0.5CoO3 (LSCO) films were prepared on MgO(100) substrates to evaluate the dielectric properties of the films. The dielectric constant of PMN and PMN-PT films ranged from 1000 to 3800 at 10 kHz measured at room temperature. The highest dielectric constant was obtained from PMN films with 99% perovskite phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113868
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of SrTiO3/YBa2Cu3O7−x heterostructures by plasma-enhanced metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3563-3565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7−x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7−x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1–0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7−x interface and epitaxial growth with [100]SrTiO3(parallel)[001]YBa2Cu3O7−x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7−x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10−6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111198
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