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  • 1
    Electronic Resource
    Electronic Resource
    Photoinduced Charge Transfer in Excited C60 (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 12301-12304 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100032a038
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  • 2
    Electronic Resource
    Electronic Resource
    Reactively sputtered Ti-Si-N films I. Physical properties (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 656-663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Ti-Si-N were synthesized by reactively sputtering TiSi2, Ti5Si3, or Ti3Si targets in an Ar/N2 gas mixture. They were characterized in terms of their composition by MeV 4He backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and high-resolution transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. All films have a metal–to–silicon ratio close to that of their respective targets. The as-deposited films are either entirely amorphous or contain inclusions of TiN-like nanometer-sized grains when the overall atomic composition of the films approaches the TiN phase in the ternary Ti-Si-N diagram. A correlation between the resistivity of the as-deposited films and their position in the ternary phase diagram is evident, indicating that at the atomic scale, the spatial arrangement of atoms in the amorphous phase and their bonding character can approximate those of the equilibrium phases. A mixture of nanocrystalline TiN and amorphous Si-N is proposed for some titanium- and nitrogen-rich films. The atomic density of some films exceeds 1023 at./cm3. The resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 h decreases the resistivity of the Ti-rich films deposited from the Ti5Si3 or the Ti3Si target, but increases that of the Si-rich films deposited from the TiSi2 target when the nitrogen content exceeds about 30 at. %. The effectiveness of these films as diffusion barriers between Si and Al or Cu is reported in Part II. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364133
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  • 3
    Electronic Resource
    Electronic Resource
    Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 664-671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti-Si-N films synthesized by reactively sputtering a TiSi2, a Ti5Si3, or a Ti3Si target in Ar/N2 gas mixture were tested as diffusion barriers between planar (100) Si substrates and shallow n+p Si diodes, and Al or Cu overlayers. The stability of the Ti-Si-N barriers generally improves with increasing nitrogen concentration in the films, with the drawback of an increase in the film's resistivity. Ti34Si23N43 sputtered from the Ti5Si3 target is the most effective diffusion barrier among all the Ti-Si-N films studied. It works as an excellent barrier between Si and Cu. A film about 100 nm thick, with a resistivity of around 700 μΩ cm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C for 30 min vacuum annealing. When it is used between Al and Si, the highest temperature of stability achievable with a 100-nm-thick film is 550 °C. A thermal treatment at 600 °C causes a severe intermixing of the layers. The microstructure, atomic density, and electrical resistivity of these films are described in an accompanying Part I. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364206
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4226-4228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride (GaN) thin films with a wurtzite structure were grown on fused silica (FS) substrates by pulsed laser ablation of a liquid gallium target in the presence of ammonia gas. X-ray diffraction measurement shows a single c-axis orientation for the GaN film grown with a thin (〈1000 A(ring)) zinc oxide (ZnO) film as an alignment layer. There is a great improvement in the surface morphology as well as optical transmission for the GaN film grown on the ZnO buffered FS substrate. The energy band gap obtained from the absorption spectrum is about 3.45 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363302
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of R(Fe,Mn)11Ti compounds : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6324-6326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-field magnetization measurements have been performed on both free-powder samples and magnetically aligned samples of R(Fe,Mn)11Ti (R=Y, Nd, Sm, Gd, Er) compounds at 4.2 K in a step field up to 28 T. The temperature dependence of ac susceptibilities of R(Fe,Mn)11Ti has been measured in a temperature range from 4.2 to 800 K. It has been found that both the magnetic moment of the transition-metal sublattice and the Curie temperature of RFe11−xMnxTi compounds decrease with increasing x. Spin reorientations occur in ErFe11−xMnxTi compounds as the result of competition between the uniaxial anisotropy of the transition-metal sublattice and the planar or conical anisotropy of the Er sublattice. The intersublattice exchange constants nRT of ErFe11−xMnxTi compounds have been deduced by the high-field free-powder method. The effect of the substitution of Fe by Mn on the magnetic anisotropies of R(Fe,Mn)11Ti with R=Y, Nd, Sm has been investigated. First-order magnetization processes take place in SmFe11−xMnxTi compounds when the external field is applied perpendicular to the alignment direction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361987
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of mechanical alloyed Nd–Fe–Ti compounds and their nitrides : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5525-5527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Nd–Fe–Ti intermetallic compounds with a ThMn12 structure have been successfully prepared by mechanical alloying and then annealed. It has been found that the phase of the hexagonal TbCu7 structure is formed in Nd8Fe84Ti8 mechanical alloy powders annealed at temperatures ranging from 650 to 850 °C. With an increase in the annealing temperature Ta, the metastable TbCu7 structure transforms into a ThMn12 structure at Ta=900 °C. Consequently, the Curie temperature increases from 180 °C of TbCu7 structure at Ta=650 to 300 °C of ThMn12 structure at Ta=1050 °C. In the series of NdxFe92−xTi8 annealed at 960 °C for 30 min, it has been observed that the ThMn12 structure exists only over the range of compositions of 5≤x〈11, and the structure of the type Th2Zn17 is formed for x≥11. All the compounds are nitrited at 400 °C for 15 h, and the Curie temperatures are raised from 400 to 450 °C. The Nd9Fe83Ti8 powder, annealed at 960 °C for 30 min, and nitrided at 400 °C for 15 h, has a coercivity iHc=2.3 kOe. The low coercivity perhaps mainly results from an excessive growth of α-Fe grains due to the high annealing temperature necessary for forming the hard magnetic phase Nd(Fe,Ti)12Nδ. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362298
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of Ga substitution for Fe on the structure and magnetic properties of Nd8.4Fe87.1−xGaxB4.5 (x=0–2.2) alloys prepared by mechanical alloying (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5335-5337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a partial substitution of Ga for Fe on the structure and magnetic properties of mechanically alloyed Nd8.4Fe87.1B4.5 were studied. With increasing Ga content, the magnetic properties of the nanocomposite magnets first improve, reach maxima at 1.1 at. % Ga, and then degrade. The addition of Ga helps to control the morphology, especially the grain sizes of both α-Fe and Nd2Fe14B. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373339
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  • 8
    Electronic Resource
    Electronic Resource
    Construction and testing of an 11.4 GHz dielectric structure based traveling wave accelerator (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2301-2304 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on the design, numerical modeling, and experimental testing of a cylindrical dielectric loaded traveling wave structure for charged particle beam acceleration. This type of structure has similar accelerating properties to disk-loaded metal slow wave structures but with some distinct advantages in terms of simplicity of fabrication and suppression of parasitic wakefield effects. Efficient coupling of external rf power to the cylindrical dielectric waveguide is a technical challenge, particularly with structures of very high dielectric constant ε. We have designed and constructed an X-band structure loaded with a permittivity ε=20 dielectric to be powered by an external rf power source. We have attained high efficiency broadband rf coupling by using a combination of a tapered dielectric end section and a carefully adjusted coupling slot. Bench testing using a network analyzer has demonstrated a power coupling efficiency in excess of 95% with bandwidth of 30 MHz, thus providing a necessary basis for construction of an accelerator using this device. We have also simulated the parameters of this structure using a finite difference time domain electromagnetic solver. Within the limits of the approximations used, the results are in reasonable agreement with the bench measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150446
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L3,2 edge (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6379-6383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption fine structures (XAFS) and electron energy loss spectroscopy (EELS) at the Si L3,2 edge have been used to investigate a series of Si nanowires (as-prepared and HF refreshed). X-ray excited optical luminescence (XEOL) was also used to study the optical properties of these Si nanowires. Although no noticeable edge-jump blueshift (widened band gap) is observed in XAFS, a noticeable change in the edge jump (a less steep rise and the blurring of spectral features) is observed, indicating considerable degradation in the long-range order and size effects. However, EELS with a nanobeam exhibits a threshold blueshift and parabolic behavior for some selected wires indicating that there are grains smaller than the nominal diameter in these nanowires. Thus, XAFS probes the average of a distribution of wires of various sizes of which the majority is too large to exhibit detectable quantum confinement behavior (blueshift) observed and inferred in EELS and XEOL. The results and their implications are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417997
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  • 10
    Electronic Resource
    Electronic Resource
    Surface reactivity of Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6396-6399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical reactivity of hydrogen-passivated surface of silicon nanowires (SiNWs) towards the reductive deposition of silver and copper ions from solution is reported. SiNWs synthesized by laser ablation were used in the investigation. The surface properties of SiNWs after the removal of the surface oxide were studied. It is found that the surface silicon of the SiNWs can readily reduce silver (I) and copper (II) ions to metal aggregates of various morphologies on the SiNW surface at room temperature. The reaction products have been characterized with scanning electron microscopy, energy dispersive x-ray spectroscopy, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. By varying the concentration of Ag(I) ions in the solution, nanostructures of silver with different shapes and sizes can be obtained. This approach for synthesis of metal nanostructures offers a potential method for the preparation of desired metal catalysts. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367402
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