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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6608-6610 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The grain-size effect on the semiconductor-to-metal transition in ZnS has been investigated by in situ high-pressure electrical resistance and optical measurements. It is found that the grain-size effect can elevate the transition pressure of ZnS in a larger pressure range. On the basis of the results obtained and results reported in the literature, we demonstrate that the dangers of using the transition pressures of the II–VI compounds as pressure calibrators without a detailed knowledge of their grain-size effects on the transition pressures cannot be overstressed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5285-5287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Face-centered cubic (fcc) Fe wedges of 0–12 ML were grown by means of molecular beam epitaxy onto a novel substrate: flat Cu(110) with an oxygen-induced, long-range ordered striped phase, and studied in situ with medium energy electron diffraction (MEED) and the surface magneto-optical Kerr effect (SMOKE). In contrast to Fe growth on either clean or oxygen-saturated Cu(110), the films on the striped substrates retain a layer-by-layer growth mode up to 6–7 ML and are fcc at least up to 12 ML. In addition, satellite peaks were observed on both sides of the MEED (0, 0) streak, indicating a long-range-ordered lateral modulation of the Fe surface. We postulate that the Fe films grow conformally onto the original striped substrate. SMOKE studies show that these fcc Fe wedges are ferromagnetic with an easy axis along the original stripes for Fe thickness 〉4 ML and a remanant magnetization that increases linearly with thickness beyond 4 ML. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4188-4191 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of lattice stress relaxation on the microstructures of epitaxial thin films by domain structure studies of epitaxial SrRuO3 thin films grown on vicinal (001) SrTiO3 substrates. X-ray diffraction analysis revealed that the as-grown films are single domain and have a strained lattice due to the lattice mismatch with the substrate. In contrast, plan-view transmission electron microscopy (TEM) images obtained from the same films showed the coexistence of domains with three different crystallographic orientations. The discrepancy is attributed to the lattice stress relaxation occurring on the TEM specimens as the substrate material is eliminated by ion milling or etching, resulting in the formation of elastic domains with different crystallographic orientations. These studies directly reveal a crucial effect of the lattice strain relaxation on the microstructures and properties of epitaxial thin films when the substrate material is removed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5615-5617 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetization and finite-size effects of thin Gd layers in sputter-deposited Gd/W multilayers. The interfacial Gd atoms lose about 9% of their moment, as the result of being in proximity with W. Annealing the multilayers at high temperatures improves the crystalline quality and sharpens the susceptibility peaks. The Curie temperature TC decreases with decreasing dGd according to the finite-size scaling relation [TC(∞)−TC(d)]/TC(∞)=(d/d0)−λ. The shift exponent λ has been found to be 1.5±0.1 and the constant d0 to be 13 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6735-6740 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-peak-power lasers are typically used as pump sources in nonlinear optical measurements. Intrinsic to these sources are pulse-to-pulse output energy instabilities. We report on how pump instabilities affect the measurement of nonlinear susceptabilites and develop theory which relates statistical parameters of a general, arbitrary pump energy probability distribution to those of its corresponding mth harmonic output. The relation leads to a simple method of data analysis whereby pump instabilities can be used as a tool in determining the nonlinear susceptibility of a material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 909-911 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic oxide films of SrRuO3 deposited on (001) SrTiO3 by pulsed laser deposition have been investigated by transmission electron microscopy (TEM) techniques. These films have a single crystalline structure with an extremely smooth surface. A TEM study of cross-sectional samples shows that the film grew epitaxially on the (001) surface of the SrTiO3 substrate. The films grew along the [110] directions with an in-plane orientation relationship of either SrRuO3[1¯10]//SrTiO3 [100] and SrRuO3[001]//SrTiO3[010], or SrRuO3[11¯0]//SrTiO3[010] and SrRuO3[001]//SrTiO3 [100]. Domains with a rotation of 90° around SrRuO3[110] were observed in the dark-field image of plan-view samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results on the magnetic reversal process in epitaxial Sm–Co(11¯00)/TM (TM=Fe, Co) bilayer films prepared via magnetron sputtering onto Cr-buffered single-crystal MgO substrates. The magnetically hard Sm–Co films have 20 T uniaxial anisotropy and coercivities 〉3 T at room temperature. The magnetization of the soft layer is pinned at the interface to the hard-magnet layer and switches reversibly as expected for an exchange-spring magnet. With increasing soft layer thickness, the coercive field of the hard layer becomes significantly less than that of a single layer. We also present numerical solutions to a one-dimensional model that provide the spin configuration for each atomic layer. Comparison of the experimental results with the model simulations indicates that the exchange-spring behavior of our bilayer films can be understood from the intrinsic parameters of the hard and soft layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-layered Ruddlesden–Popper phase SrO(La1−xSrxMnO3)2, with x=0.3 and 0.4, exhibits colossal magnetoresistance, a magnetic anisotropy which is strongly composition-dependent, very little remanence, and an anomalous low-field magnetization (M) plateau between the Curie temperature (TC) and T*∼300 K. The resistivity peaks near TC for both in-plane and out-of-plane currents. The magnetization plateau is not intrinsic to the crystal, but is attributed to intergrowth defects, consisting of one additional or missing SrO blocking layers, as observed in transmission electron micrographs. The intergrowths exhibit interesting two-dimensional magnetic behavior, for both the x=0.3 and 0.4 compositions. For x=0.4, M scales as (1−T/T*)β, with β=0.25±0.02. For x=0.3, the intergrowths exhibit an easy axis in the a-b plane due to the shape anisotropy, while for T〈TC, M lies along the c axis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4435-4438 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of uniaxial deformation on the giant magnetoresistance (GMR) effect in melt-spun Co–Cu ribbons. Postprecipitation deformation does not affect the Co particles, but the mechanical processing increases the structural disorder and the resistivity; thus the GMR effect is degraded. Deforming the metastable alloy prior to precipitation of the Co particles possibly affects the particle nucleation process. As a result, the low-field sensitivity of the GMR effect increases slightly.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-radiation topographic observations have shown that the Cu-doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 crystal has a strong ferroelectric x-ray anomalous-scattering effect at the wavelength near the absorption edge of Ba atoms. The reversal of anomalous contrast of antiparallel domains in the crystal was directly revealed in the topographs of hkl and hkl¯ reflections. It was found that the domain walls are all polar and are formed to compensate the charges resulting from the inhomogeneous distributions of the metal atoms in the bulk crystal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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