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  • 1
    Electronic Resource
    Electronic Resource
    Effects of temperature and continuous and interrupted wetness on the infection of pear leaves by conidia of Venturia nashicola (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 54 (2005), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Experiments were conducted to determine: (i) the effects of temperature and duration of continuous wet periods on the infection of pear seedlings by conidia of Venturia nashicola, the causal agent of pear scab; and (ii) the effects of the length and temperature of dry interrupting periods on the mortality of infecting conidia. Average number of scab lesions per leaf increased with increasing duration of wetness. Logistic models adequately described the change in the average number of scab lesions per leaf at 5, 10, 15, 20 and 25°C over the wetness duration. At 30°C, only a few lesions developed. Simple polynomial models satisfactorily described the relationship of the three logistic model parameters (maximum number of lesions, rate of appearance and the time to 50% of the maximum number of lesions) with temperature. The optimum temperature for infection was found to be approximately 20°C. The relationship between mortality and the length of a dry period interrupting an infection process can be satisfactorily described by an exponential model. The rate of mortality at 10, 16 and 22°C did not differ significantly, but was significantly less than that at 28°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2005.01207.x
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of temperature, relative humidity and duration of wetness period on germination and infection by conidia of the pear scab pathogen (Venturia nashicola) (2003)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 52 (2003), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Experiments were conducted to determine the effects of temperature, relative humidity (RH) and duration of wetness period on in vitro germination of conidia and infection of detached pear leaves by Venturia nashicola, the causal agent of pear scab. Conidia germinated only in near-saturation humidity (RH 〉 97%). The final percentage germination (24 h after inoculation) at 100% RH without free water was less than half that in free water. Conidia germinated over the range of temperatures tested (5–30°C); the optimum temperature for germination was ≈21°C. Changes in percentage germination of conidia over time were fitted by logistic models at each individual temperature. Polynomial models satisfactorily described the relationships between two (rate and time to 50% of maximum germination) of the three logistic model parameters and temperature. The minimum length of the wetness period for successful infection of detached pear leaves by conidia was observed at several temperatures. The shortest length of wetness period required for infection was 7 h at 22°C. Two polynomial models fitted well the relationship between the minimum wetness duration required for infection, and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3059.2003.00887.x
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  • 3
    Electronic Resource
    Electronic Resource
    Initial growth studies of silicon oxynitrides in a N2O environment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1816-1822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the initial growth of silicon oxynitride films on a clean Si(100) single crystal in a N2O ambient under ultrahigh vacuum conditions using Auger electron spectroscopy and nuclear reaction analysis. Variations in the growth parameters, e.g., exposure, N2O pressure and sample temperature, have been systematically investigated. Nitrogen incorporated in the oxynitride film is distributed in a region close to the film/substrate interface and most nitrogen is incorporated within a film thickness of ∼2.5 nm. These studies find an important application to the semiconductor industry with regard to possible new high quality gate oxide materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362993
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient dry etching of Si with vacuum ultraviolet light and XeF2 in a buffer gas (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 350-356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Replicas of a mask are etched in Si wafers with a micrometer lateral resolution and typical depths of 200 nm by irradiation with filtered synchrotron radiation using cutoff wavelengths of 105, 122, and 150 nm. An excellent selectivity and anisotropy is obtained by suppressing the spontaneous etching of the XeF2 etch gas (typical 10−2 mbar) with O2 or Ar buffer gas (typical 1 mbar). The efficiency of etching increases by more than two orders of magnitude by reducing the wavelength from longer than 150 nm to the spectral range of 105–122 nm. The number of removed Si atoms per incident photon reaches a value above unity for the short wavelengths. This very high quantum efficiency, which exceeds that in the visible spectral range by more than four orders of magnitude, is attributed to selective electronic excitation of a thin fluorosilyl layer on top of the Si wafer. The low probability of absorption in this layer implies a reaction efficiency far above unity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359329
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  • 5
    Electronic Resource
    Electronic Resource
    The permanent electric dipole moment of PtO, PtS, PtN, and PtC (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 1767-1772 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The permanent electric dipole moments of the ground, and the low-lying excited electronic states of platinum monocarbide, PtC, platinum monoxide, PtO, and platinum monosulfide, PtS, were measured using a molecular beam optical Stark spectroscopic scheme. The determined values were (in Debye): PtO(X 3Σ−) 2.77(2); PtO(A 1Σ+) 1.15(4); PtS[X(Ω=0)] 1.78(2); PtS[B(Ω=0)] 0.54(6); PtC(X 1Σ+) 0.99(5); and PtC(A 1Π) 2.454(3). These results, along with the previous results for PtN(X 2Π1/2) 1.977(9); PtN(d 4Π1/2) 1.05(9) [J. Chem. Phys. 102, 643 (1995)], are used as a basis for a discussion of the nature of the electronic states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469750
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  • 6
    Electronic Resource
    Electronic Resource
    A supersonic molecular beam spectroscopic study of platinum monocarbide, PtC (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 5937-5941 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The gaseous products generated in the supersonic coexpansion of laser ablated platinum vapor with methane or acetylene were probed by visible laser induced fluorescence (LIF) spectroscopy. Both platinum monocarbide, PtC, and an unidentified Pt-containing polyatomic molecule were detected. The intense (0,0)A' 1Π→X 1Σ+ (T00=13 196.13 cm−1) and (0,0)A 1Π→X 1Σ+ (T00=18 510.71 cm−1) band systems of PtC were recorded at a resolution of ∼0.001 cm−1. The magnetic hyperfine splitting exhibited in the spectral features of the 195PtC isotopomer was analyzed and indicates that the A' 1Π and A 1Π states arise primarily from a...σ1π1 and a...δ3π1 configurations, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469327
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  • 7
    Electronic Resource
    Electronic Resource
    Brillouin scattering and side-group motions of poly(alkyl methacrylates) above and below the glass transition (1986)
    s.l. : American Chemical Society
    Macromolecules 19 (1986), S. 778-784 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00157a049
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  • 8
    Electronic Resource
    Electronic Resource
    Susceptibility spectrum of a magnetic conducting sphere (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3044-3045 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The frequency dependence of the complex ac susceptibility of a magnetic conducting sphere is derived. The resultant formulas can be used to determine electrical conductivity from ac susceptibility measurements, to calculate ac susceptibilities of standard samples for the calibration of ac susceptometers, and to analyze ac losses in materials research.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144605
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  • 9
    Electronic Resource
    Electronic Resource
    A metal plasma source ion implantation and deposition system (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1816-1820 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article presents a metal plasma source ion implantation and deposition system, which is a qualitative extension of plasma source ion implantation by combining pulsed metal plasma and steady-state gas plasma. The pulsed metal plasma is produced by pulsed cathodic arc discharge and the steady-state gas plasma by magnetic multipole filament discharge. The existence of gas plasma greatly facilitates the breakdown of the pulsed cathodic arc plasma source, which does not need the conventional trigger system. Some operation characteristics of this system were measured. It was shown that the cathodic arc plasma parameters depend strongly on gas pressure. 0.45% C steel was modified in nitrogen plasma and pulsed aluminum plasma. The corrosion resistance ability of the treated 0.45% C steel sample was increased by about 30 times over that of the untreated sample. AlN/Al2O3/Al composite film was deposited on 0.45% C steel using a glow-arc technique. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149674
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  • 10
    Electronic Resource
    Electronic Resource
    Surface evolution of ultrahigh vacuum magnetron sputter deposited amorphous SiO2 thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4082-4089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology evolution of amorphous SiO2 thin films deposited by ultrahigh vacuum radio-frequency magnetron sputtering was studied by atomic force microscopy. The results show that: (1) the surface roughness of the deposited films reduces with increased substrate temperatures; (2) the surface roughness increases with higher deposition pressures; and (3) there is a roughening transition at the critical thickness of ∼ 90 nm for the substrate temperature of 713 K. The results also show that the surface roughness at the early stages of growth evolves according to a power law. Further growth beyond the critical thickness leads to a sharp increase in roughness. The experimental results are compared with the previous theoretical and experimental studies on surface evolution during sputter deposition, and discussed in terms of the competition between surface diffusion and shadowing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454224
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