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  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3798-3802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high temperature rapid thermal annealing processes on carrier concentration and mobility of bulk AlInAs and AlInAs/GaInAs high electron mobility transistor structures with planar Si doping are studied. At annealing temperatures of 700 °C and 800 °C, slight reduction in mobilities and carrier concentration are observed in samples annealed with a Si3N4 cap or GaAs pieces in close proximity. The reduction in mobility is thought to be due to enhanced diffusion of the donor Si atoms towards the two-dimensional electron gas channel. Preferential vacancy enhanced diffusion of Si atoms towards the surface is projected to be responsible for the loss in carrier concentration. At these annealing temperatures, the reduction in mobility in the samples annealed with SiO2 capping is more pronounced, and is as high as 80% at the measurement temperature of 15 K. This behavior is attributed to the outdiffusion of Ga and In atoms into the oxide thereby creating vacancies and resulting in interface mixing. Reduction in mobility and carrier concentration are much more substantial in the 900 °C anneals done with Si3N4 cap and GaAs pieces in close proximity. This indicates the destruction of the heterostructure integrity of the AlInAs/GaInAs interface. For the particular anneal with a SiO2 cap at this temperature, the carrier concentration increases above its reference value due to effective doping of the ternary material by the back-diffusing Si atoms from the SiO2 cap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352277
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of YBa2Cu3O7−δ thin films by magnetron sputtering with in situ plasma oxidation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2308-2310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−δ thin films with surface roughness Ra∼20 A(ring) have been successfully prepared by either rf or dc magnetron sputtering. The substrate temperature was kept at 600–670 °C during deposition and a subsequent in situ plasma oxidation treatment was performed at 480–520 °C. The films deposited on single-crystal SrTiO3 (100) exhibited zero resistance at 91 K and had the critical current density of 3×106 A/cm2. In this paper we describe the influences of fabrication conditions on film superconductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346536
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  • 3
    Electronic Resource
    Electronic Resource
    Pharmacological Effects of Xanthones as Cardiovascular Protective Agents (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Cardiovascular drug reviews 22 (2004), S. 0 
    Details
    ISSN: 1527-3466
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Many epidemiological studies indicate that consumption of dietary polyphenolic compounds is beneficial in the prevention of cardiovascular diseases. Xanthones are a class of polyphenolic compounds that commonly occur in plants and have been shown to have extensive biological and pharmacological activities. Recently, the pharmacological properties of xanthones in the cardiovascular system have attracted great interest. Xanthones and xanthone derivatives have been shown to have beneficial effects on some cardiovascular diseases, including ischemic heart disease, atherosclerosis, hypertension and thrombosis. The protective effects of xanthones in the cardiovascular system may be due to their antioxidant, antiinflammatory, platelet aggregation inhibitory, antithrombotic and/or vasorelaxant activities. In particular, the antagonism of endogenous nitric oxide synthase inhibitors by xanthones may represent the basis for improved endothelial function and for reduction of events associated with atherosclerosis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1527-3466.2004.tb00133.x
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  • 4
    Electronic Resource
    Electronic Resource
    Interleukin-1β stimulates macrophage inflammatory protein-1α and -1β expression in human neuronal cells (NT2-N) (2003)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 84 (2003), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Chemokines are important mediators in immune responses and inflammatory processes of neuroimmunologic and infectious diseases. Although chemokines are expressed predominantly by cells of the immune system, neurons also express chemokines and chemokine receptors. We report herein that human neuronal cells (NT2-N) produce macrophage inflammatory protein-1α and -1β (MIP-1α and MIP-1β), which could be enhanced by interleukin (IL)-1β at both mRNA and protein levels. The addition of supernatants from human peripheral blood monocyte-derived macrophage (MDM) cultures induced MIP-1β mRNA expression in NT2-N cells. Anti-IL-1β antibody removed most, but not all, of the MDM culture supernatant-induced MIP-1β mRNA expression in NT2-N cells, suggesting that IL-1β in the MDM culture supernatants is a major factor in the induction of MIP-1β expression. Investigation of the mechanism(s) responsible for IL-1β-induced MIP-1α and -1β expression demonstrated that IL-1β activated nuclear factor kappa B (NF-κB) promoter-directed luciferase activity in NT2-N cells. Caffeic acid phenethyl ester, a potent and specific inhibitor of activation of NF-κB, not only blocked IL-1β-induced activation of the NF-κB promoter but also decreased IL-1β-induced MIP-1α and -1β expression in NT2-N cells. These data suggest that NF-κB is at least partially involved in the IL-1β-mediated action on MIP-1α and -1β in NT2-N cells. IL-1β-mediated up-regulation of β-chemokine expression may have important implications in the immunopathogenesis of inflammatory diseases in the CNS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.2003.01609.x
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  • 5
    Electronic Resource
    Electronic Resource
    Dihedral Angle and Bond Angle Dependence of Vicinal Proton-Fluorine Spin-Spin Coupling (1966)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 88 (1966), S. 5678-5680 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00975a075
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  • 6
    Electronic Resource
    Electronic Resource
    On the sublattice location of GaAs grown on Ge (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5748-5753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single domain GaAs layers have been grown by atmosphere pressure metal-organic vapor phase epitaxy on Ge(100) substrates misoriented to (111) with different angles of 0°–4°, under various growth conditions. Epilayers have been studied by transmission electron microscopy, molten KOH etch and optical interference contrast microscopy. It is found that at an initial growth temperature of 550 °C the sublattice location of the GaAs layers grown on substrates with small misorientation angles (less than 3°) is reversed as compared to that of the layers grown on substrates with larger misorientation angles, independent of the initial growth rates and V/III ratios. When the initial growth temperature is increased the transition from one type of sublattice location to the other occurs at a lower misorientation angle, while at an initial growth temperature of 700 °C the sublattice location of the layers grown on the different substrates becomes the same. These results can hardly be explained by the existing theories and a new model is proposed based on a concept that the sublattice location of GaAs on Ge is defined by the relative intensity of nucleation at steps and on terraces between steps, taking into account the effects of the growth temperature and the step density of the substrate surface on the nucleation mode, and the fact that single domain GaAs can be obtained by the self-annihilation of antiphase boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358412
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  • 7
    Electronic Resource
    Electronic Resource
    Hole drift mobility measurements in amorphous silicon-carbon alloys (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2310-2315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole drift mobilities have been measured using photocarrier time-of-flight for several hydrogenated amorphous silicon-carbon alloy specimens. We find that, as the band gap increases, the hole drift mobility remains essentially constant. The temperature and dispersion properties were broadly consistent with hole multiple trapping in the valence bandtail. In conjunction with previous drift mobility measurements in hydrogenated amorphous silicon-carbon alloys and hydrogenated amorphous silicon-germanium alloys, these hole measurements complete a simple pattern for the effects of band gap modification on drift mobilities: electron mobilities decline as the band gap is increased or decreased from 1.75 eV, but hole mobilities are relatively unaffected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358508
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  • 8
    Electronic Resource
    Electronic Resource
    Low-frequency noise in transport through quantum point contacts (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 774-776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the noise characteristics of quantum point contacts between 100 Hz and 100 kHz at 4.2 K. The noise consists of a 1/f component on top of a white background. The 1/f noise increases as the contact width decreases and shows peaks between the quantized resistance plateaus. The white noise background increases with current but is much lower than the full shot noise level, suggesting that shot noise is not generated in an ideal quantum point contact, where the electrons do not suffer backscattering as they enter and traverse the contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104094
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  • 9
    Electronic Resource
    Electronic Resource
    Prolactin-Mediated Regulation of Gene Transcription in Lymphocytes (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 594 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb40475.x
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  • 10
    Electronic Resource
    Electronic Resource
    Prolactin: Role in T-cell Proliferation (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 546 (1988), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1988.tb21655.x
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