ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Data are presented demonstrating the effect that cavity length, and thus Q, has upon quantum well heterostructure edge-emitting laser diodes that are reduced to microcavity thickness. The lasers, with reduced mode density and enhanced spontaneous emission, are defined vertically by a Ag top-contact mirror and a closely spaced (∼0.9 μm) high-contrast AlAs native oxide-GaAs distributed Bragg reflecting bottom mirror. For shorter and shorter diode lengths (700→70 μm, and still lesser mode density) the light versus current (L–I) characteristic below threshold is at first steeper and steeper (amplified stimulated emission), until, at a diode length of ∼100 μm, the loss in Q and insufficient gain are manifest as a downward bend in the L–I curve and a shift to higher threshold current where bandfilling to a higher state (shorter wavelength) contributes more gain. © 1996 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.362562
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