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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 176-188 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Behaviors of an excess proton in solute-containing water clusters were investigated using infrared spectroscopy and ab initio calculations. This investigation characterized the structures of protonated methanol-water clusters, H+(CH3OH)(H2O)n with n=2–6, according to their nonhydrogen-bonded and hydrogen-bonded OH stretches in the frequency range of 2700–3900 cm−1. Ab initio calculations indicated that the excess proton in these clusters can be either localized at a site closer to methanol, forming a methyloxonium ion core (CH3OH2+), or at a site closer to water, forming a hydronium ion core (H3O+). Infrared spectroscopic measurements verified the calculations and provided compelling evidence for the coexistence of two distinct structural isomers, CH3OH2+(H2O)3 and H3O+(CH3OH)(H2O)2, in a supersonic expansion. The spectral signatures of them (either CH3OH2+ or H3O+ centered) are the free-OH stretching absorption band at 3706 cm−1 of a single-acceptor-single-donor H2O, and the band at 3673 cm−1 of a single-acceptor CH3OH. At n=4–6, the clusters adopt structures similar to their pure water analogs with five-membered rings starting to form at n=5. The position of the excess proton in them varies sensitively with the number of solvent water molecules as well as the geometry of the clusters. To further elucidate the behaviors of the excess proton in these clusters, we analyze in detail the potential energy surface along the proton transfer coordinate for two specific isomers of n=2 and 4: MW2II and MW4I. It is found that the proton can be nearly equally shared by methanol and the water dimer subunit in the form of CH3OH–H+–(H2O)2, as substantiated by hydrogen bond cooperativity and zero-point vibrational effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 8 (1975), S. 635-637 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8589-8593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the subband energy levels in AlGaAs/GaAs multiple quantum wells grown at different temperatures (200–600 °C) by using the piezoreflectance and photoreflectance in room temperature. Under subsequent 30 s rapid-thermal annealing at different temperatures (600–1000 °C), we observed a large energy blueshift in samples with growth temperature below 400 °C. This blueshift energy may be attributed to the modification of quantum wells caused by gallium vacancy enhanced Al–Ga interdiffusion. The energy blueshifts were analyzed by solving Fick's second law for Al diffusion in quantum wells, obtaining an effective activation energy of 0.75 eV. We discuss our results using the nonequilibrium diffusion equation and comparing them with other experiments. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 672-678 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 1211-1214 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Infrared spectra of CH stretches have been investigated on the surfaces of synthetic diamond crystallites (5, 100, and 700 nm in diameter) to provide insights into the mid-infrared emission bands of stardusts in interstellar media. While the spectrum of 5-nm diamonds fails to display the distinct 2835 cm−1 (or 3.53 μm) band, a remarkably good match of the absorption bands of larger diamond grains with the emission observed for the stars Elias 1 and HD 97048 is obtained. Suggested by this study, the nanodiamonds that can display such characteristic emission bands at 3.53 μm in these two interstellar systems have a size significantly larger than 5 nm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 253-269 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified set of equations is derived that approximates the magnetohydrodynamic (MHD) Navier–Stokes equations for weakly nonlinear disturbances whose speeds are close to the MHD intermediate speed. Its shock structure solutions are then examined. The fast and slow shock solutions are uniquely specified by their Rankine–Hugoniot relations. However, the intermediate shock solutions, which are not unique, are characterized by the integral through the shock of the noncoplanar component of the magnetic field. For situations in which this integral is conserved, the Riemann problem is well defined and predicts the evolution of intermediate shocks. This analysis is substantiated by numerical computations.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 1407-1419 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cohen–Kulsrud–Burgers equation (CKB) is used to consider the nonlinear evolution of resistive, quasiparallel Alfvén waves subject to a long-wavelength, plane-polarized, monochromatic instability. The instability saturates by nonlinear steepening, which proceeds until the periodic waveform develops an interior scale length comparable to the dissipation length; a fast or an intermediate shock then forms. The result is a periodic train of Alfvén shocks of one or the other type. For propagation strictly parallel to the magnetic field, there will be two shocks per instability wavelength. Numerical integration of the time-dependent CKB equation shows that an initial, small-amplitude growing wave asymptotes to a stable, periodic stationary wave whose analytic solution specifies how the type of shock embedded in the shock train, and the amplitude and speed of the shock train, depend on the strength and phase of the instability. Waveforms observed upstream of the Earth's bowshock and cometary shocks resemble those calculated here.
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